The origin of yellow band emission and cathodoluminescence of Au-catalyzed wurtzite GaN nanowires

2016 ◽  
Vol 80 ◽  
pp. 91-94 ◽  
Author(s):  
R.S. Zhang ◽  
J.F. Jiao ◽  
X. Wu
Keyword(s):  
Yellow Band ◽  
Gan Nanowires ◽  
Band Emission ◽  
Yellow Band Emission

Influence of Oxygen on Er-Related Emission in Gan With a Large Yellow Band

1998 ◽  
Vol 510 ◽  
Author(s):  
S. Ueklsa ◽  
T. Goto ◽  
Mv. Kumagai
Keyword(s):  
Single Crystal ◽  
Sapphire Substrate ◽  
Annealing Temperature ◽  
Yellow Band ◽  
Oxygen Ions ◽  
Band Emission ◽  
Pl Intensity ◽  
Effect Of Oxygen ◽  
Optimum Annealing Temperature ◽  
Yellow Band Emission

AbstractIn order to investigate the luminescence properties of Er3+in GaN and the effect of oxygen (O) on Er3+ -related emission in GaN:Er, erbium (Er) ions were implanted into single-crystal h-GaN grown on a c-axis sapphire substrate at an energy of 2MeV. Oxygen ions were subsequently coiniplanted into GaN with Er ions. The influence of oxygen on Er-related emission in GaN with a large yellow band was studied by comparing photoluminescence (PL) measurements of GaN:Er and GaN:ErO. It was found that the optimum annealing temperature to obtain maximum PL intensity was 1200°C and that the E3+a-related PL intensities from GaN:ErO samples were negligibly enhanced in comparison with the GaN:Er samples. The temperature dependence of PL intensity in GaN:ErO showed no appreciable difference from that of GaN:Er. But good correlation between Er-related and a large yellow band emission was observed in GaN. This indicates that codoped oxygen ions influence Er-related and yellow band emission in GaN

On the yellow-band emission in CdS films

2001 ◽  
Vol 73 (1) ◽  
pp. 61-65 ◽  
Author(s):  
R. Lozada-Morales ◽  
O. Zelaya-Angel ◽  
G. Torres-Delgado
Keyword(s):  
Yellow Band ◽  
Band Emission ◽  
Cds Films ◽  
Yellow Band Emission

Origin of Yellow-Band Emission in Epitaxially Grown GaN Nanowire Arrays

2014 ◽  
Vol 6 (16) ◽  
pp. 14159-14166 ◽  
Author(s):  
Baodan Liu ◽  
Fang Yuan ◽  
Benjamin Dierre ◽  
Takashi Sekiguchi ◽  
Song Zhang ◽  
...  
Keyword(s):  
Nanowire Arrays ◽  
Yellow Band ◽  
Band Emission ◽  
Gan Nanowire ◽  
Yellow Band Emission

scholarly journals Synthesis and Luminescence Properties of La2O2S:RE3+ (RE3+ = Ce3+, Dy3+, Eu3+ and Tb3+) Submicron Size Phosphors for Lamp Industry

2020 ◽  
Vol 9 (4) ◽  
pp. 1898-1907
Keyword(s):  
Solid State ◽  
Broad Band ◽  
Blue Emission ◽  
Luminescence Properties ◽  
Excitation Spectra ◽  
Yellow Band ◽  
Broad Band Emission ◽  
Band Emission ◽  
Ft Ir ◽  
Down Conversion

RE3+(RE3+ = Ce3+, Dy3+, Eu3+ and Tb3+) doped La2O2S phosphors was synthesized by solid state flux fusion method and their down conversion spectral properties were studied as a function different RE3+ concentrations and reported in this paper. The solid state flux fusion results in well crystallized hexagonal shaped phosphor particles. The samples were characterized by XRD, SEM, FT-IR photoluminescence (PL) and CIE colour co-ordinates techniques. The lanthanum oxysulphide (La2O2S) phosphor doped with Ce3+ shows broad band emission with peak at 390 nm and 415 nm when excited at 340 nm excitation. La2O2S:Dy3+ shows efficient blue and yellow band emissions at 480 nm and 572 nm. La2O2S:Eu3+ phosphor shows an orange and red emission at 590 nm and 615 nm. Whereas La2O2S:Tb3+ phosphor shows weak blue emission at 488 nm and strong green 545 nm. The excitation spectra used for the La2O2S:RE3+ (where RE3+ = Ce3+, Dy3+, Eu3+ and Tb3+) phosphors is in the near UV region extending from 350 to 400 nm, which is characteristics of near UV excited LED. The effect of the RE3+ (RE3+= Ce3+, Dy3+ , Eu3+ and Tb3+) concentration on the luminescence properties of La2O2S:RE3+ phosphors were also studied. The investigated prepared La2O2S phosphors may be suitable for a near UV excited W-LED. Keywords: Oxysulphide, SEM, FT-IR, PL, SSL, CIE.

Visible and Infrared Emission from GaN:Er Thin Films Grown by Sputtering

1999 ◽  
Vol 595 ◽  
Author(s):  
Hong Chen ◽  
K. Gurumurugan ◽  
M.E. Kordesch ◽  
W.M. Jadwisienczak ◽  
H.J. Lozykowski
Keyword(s):  
Electron Excitation ◽  
Infrared Emission ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Yellow Band ◽  
X Ray ◽  
Band Emission ◽  
Cathodoluminescence Spectroscopy ◽  
Erbium Doped ◽  
Er Doped

AbstractErbium-doped films were grown on sapphire and silicon substrates by reactive sputtering, with different Er concentrations in the film. GaN films deposited at 800 K were determined to be polycrystalline by x-ray diffraction analysis, and retained their polycrystalline structure after annealing in nitrogen at 1250 K. The Er-doped films showed optical transmission beginning at about 360 nm, and the Er dose and film purity were determined with Rutherford backscattering spectroscopy. Photoluminescence and cathodoluminescence spectroscopy showed sharp emission lines corresponding to Er 3+ intra 4fn shell transitions over the range from 9 – 300 K. At above-bandgap optical and electron excitation, the 4S3/2 and 4F9/2 transition dominate, and are superposed on the “yellow band” emission. The infrared emission line at 1543 nm, corresponding to the Er 4I⅓ to 4I3/2 transition is also observed.

Thermal Annealing Effect on Properties of Zn Foils Substrates

2015 ◽  
Vol 819 ◽  
pp. 215-219
Author(s):  
L.S. Chuah ◽  
Z. Hassan
Keyword(s):  
Grain Size ◽  
Thermal Annealing ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Yellow Band ◽  
Band Emission ◽  
Mean Grain Size ◽  
The Mean ◽  
Xrd Patterns

Annealing of Zn foils substrates was performed in air for 30 min at 300 oC, 400 oC and 500 oC, respectively. The effects of annealing on the structural and optical properties of Zn foils substrates were investigated using X-ray diffraction (XRD), and photoluminescence (PL) measurements. After annealing, the XRD patterns showed that the annealed ZnO films have c-axis preferential orientation, the crystallinity of the ZnO films was improved, and the grain size decreased by thermal annealing. PL spectra are clearly visible at 376 nm for ZnO film grown on Zn foils substrates. The mean grain size in the annealed ZnO microstructures was estimated using Scherrer’s equation is about 82, 76, 69 nm for 300°C, 400°C, and 500°C, respectively. A PL spectrum is clearly visible at 376 nm for ZnO microstructures grown on Zn foil substrates. The PL analysis indicates that the growth of ZnO thin film with the presence of the defect-related band. Green-yellow band emission is observed at 520 nm.

The Properties of a P-Implanted GaN Light-Emitting Diode

2002 ◽  
Vol 743 ◽  
Author(s):  
J. Kikawa ◽  
S. Yoshida ◽  
Y. Itoh
Keyword(s):  
Mass Spectroscopy ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Yellow Band ◽  
Blue Band ◽  
Secondary Ion Mass Spectroscopy ◽  
Light Emitting ◽  
Band Emission ◽  
Peak Energy ◽  
Secondary Ion

ABSTRACTElectroluminescence measurements of P-implanted GaN light-emitting diodes were performed. The measured peak densities of P in the GaN were 5×10 cm−3 and 4×10 cm−3 based on secondary ion mass spectroscopy. The EL spectra had a broad blue-band emission at the peak energy from around 2.8 eV to 3.3 eV and yellow-band emission at an energy centered at 2.2 eV. The blue-band emission could decompose into two components at energy positions of 2.9 eV and 3.2 eV. The former component is considered to be emission due to the recombination of the bounding exciton by P atoms, known as an isoelectronic trap in GaN.

scholarly journals Visible and Infrared Emission from GaN:Er Thin Films Grown by Sputtering

2000 ◽  
Vol 5 (S1) ◽  
pp. 145-151 ◽  
Author(s):  
Hong Chen ◽  
K. Gurumurugan ◽  
M.E. Kordesch ◽  
W.M. Jadwisienczak ◽  
H.J. Lozykowski
Keyword(s):  
Electron Excitation ◽  
Infrared Emission ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Yellow Band ◽  
X Ray ◽  
Band Emission ◽  
Cathodoluminescence Spectroscopy ◽  
Erbium Doped ◽  
Er Doped

Erbium-doped films were grown on sapphire and silicon substrates by reactive sputtering, with different Er concentrations in the film. GaN films deposited at 800 K were determined to be polycrystalline by x-ray diffraction analysis, and retained their polycrystalline structure after annealing in nitrogen at 1250 K. The Er-doped films showed optical transmission beginning at about 360 nm, and the Er dose and film purity were determined with Rutherford backscattering spectroscopy. Photoluminescence and cathodoluminescence spectroscopy showed sharp emission lines corresponding to Er 3+ intra 4fn shell transitions over the range from 9 - 300 K. At above-bandgap optical and electron excitation, the 4S3/2 and 4F9/2 transition dominate, and are superposed on the "yellow band" emission. The infrared emission line at 1543 nm, corresponding to the Er 4I13/2 to 4I5/2 transition is also observed.

Sign in / Sign up

Export Citation Format

Share Document