Activation energy for diamond growth from the carbon–hydrogen gas system at low substrate temperatures

1997 ◽  
Vol 70 (2) ◽  
pp. 173-175 ◽  
Author(s):  
J. Stiegler ◽  
T. Lang ◽  
Y. von Kaenel ◽  
J. Michler ◽  
E. Blank
Keyword(s):  
Activation Energy ◽  
Hydrogen Gas ◽  
Diamond Growth ◽  
Gas System ◽  
Substrate Temperatures

scholarly journals Deposition of Boron-Doped Thin CVD Diamond Films from Methane-Triethyl Borate-Hydrogen Gas Mixture

Processes ◽  
2020 ◽  
Vol 8 (6) ◽  
pp. 666 ◽  
Author(s):  
Nikolay Ivanovich Polushin ◽  
Alexander Ivanovich Laptev ◽  
Boris Vladimirovich Spitsyn ◽  
Alexander Evgenievich Alexenko ◽  
Alexander Mihailovich Polyansky ◽  
...  
Keyword(s):  
Film Growth ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Diamond Growth ◽  
Structural Defects ◽  
Boron Doped Diamond ◽  
Diamond Deposition ◽  
Synthesis Conditions ◽  
Surface Etching ◽  
Boron Doped

Boron-doped diamond is a promising semiconductor material that can be used as a sensor and in power electronics. Currently, researchers have obtained thin boron-doped diamond layers due to low film growth rates (2–10 μm/h), with polycrystalline diamond growth on the front and edge planes of thicker crystals, inhomogeneous properties in the growing crystal’s volume, and the presence of different structural defects. One way to reduce structural imperfection is the specification of optimal synthesis conditions, as well as surface etching, to remove diamond polycrystals. Etching can be carried out using various gas compositions, but this operation is conducted with the interruption of the diamond deposition process; therefore, inhomogeneity in the diamond structure appears. The solution to this problem is etching in the process of diamond deposition. To realize this in the present work, we used triethyl borate as a boron-containing substance in the process of boron-doped diamond chemical vapor deposition. Due to the oxygen atoms in the triethyl borate molecule, it became possible to carry out an experiment on simultaneous boron-doped diamond deposition and growing surface etching without the requirement of process interruption for other operations. As a result of the experiments, we obtain highly boron-doped monocrystalline diamond layers with a thickness of about 8 μm and a boron content of 2.9%. Defects in the form of diamond polycrystals were not detected on the surface and around the periphery of the plate.

Nucleation Enhancement of Nanocrystalline Diamond Growth at Low Substrate Temperatures by Adamantane Seeding

2010 ◽  
Vol 114 (9) ◽  
pp. 3822-3824 ◽  
Author(s):  
K. Tsugawa ◽  
M. Ishihara ◽  
J. Kim ◽  
Y. Koga ◽  
M. Hasegawa
Keyword(s):  
Nanocrystalline Diamond ◽  
Diamond Growth ◽  
Substrate Temperatures

Diamond Growth from Sputtered Atomic Carbon and Hydrogen Gas

1992 ◽  
Vol 242 ◽  
Author(s):  
Michael A. Kelly ◽  
Sanjiv Kapoor ◽  
Darin S. Olson ◽  
Stig B. Hagstrom
Keyword(s):  
Crystal Surface ◽  
Silicon Crystal ◽  
Hydrogen Gas ◽  
Diamond Growth ◽  
The Novel ◽  
Graphite Target ◽  
Rotating Platform ◽  
Sem Images ◽  
Diamond Crystals ◽  
Effective Growth

ABSTRACTDiamond thin films were grown on a scratched silicon crystal surface by a novel CVD technique. The heated substrate, mounted on a rotating platform, was exposed to a bombardment of sputtered carbon atoms, from a graphite target in a helium plasma, and subsequently bombarded by atomic hydrogen generated by a hot tungsten filament. The resulting diamond films were characterized by Raman spectroscopy and SEM. The SEM images indicate highly faceted diamond crystals and the Raman spectra show a single narrow peak characteristic of pure diamond with no graphitic component. The effective growth rate is about 0.5 microns per hour of exposure time. The novel sequential CVD reactor is described and possible growth mechanisms are discussed.

Reaction Kinetics of Atomic chlorine on Si(100)2×1

1992 ◽  
Vol 280 ◽  
Author(s):  
Kazuhiro Karahashi ◽  
Jiro Matsuo ◽  
Kei Horiuchi
Keyword(s):  
Activation Energy ◽  
Transition State ◽  
Solid Surface ◽  
Surface Reaction ◽  
Thermal Excitation ◽  
Silicon Substrates ◽  
Chlorine Atoms ◽  
Substrate Temperatures ◽  
Kinetics Of ◽  
Atomic Chlorine

ABSTRACTThe interaction of atomic chlorine with Si(100)2×1 surfaces was studied by using chlorine atom beams. The etching reaction of silicon substrates has been observed when chlorine atoms impinged on the chlorinated surface, at substrate temperatures below 600°C. The major desorption product is SiCl2. Studies of the temperature dependence of the reaction showed that the activation energy are 0.08 eV at 0.4 ML and 0.2 eV at 0.8 ML. These extremely low activation energies suggest that the surface reaction is mainly driven by the internal energy of incident atomic chlorine instead of thermal excitation from Si(100) solid surface. Therefore chlorine atoms enter the transition state without equilibrating at the surface prior to the reaction. The reaction strongly depends on the chlorine coverage on the surface. The reaction occurred above 0.3 ML. The etching probability of the surface reached a maximum at 0.4 ML, and decreased with increasing coverage.

Electrical and Optical Properties of Erbium in MBE Silicon and Si/Ge Alloys

1991 ◽  
Vol 220 ◽  
Author(s):  
H. Efeoglu ◽  
J. H. Evans ◽  
J. M. Langer ◽  
A. R. Peaker ◽  
N. L. Rowell ◽  
...  
Keyword(s):  
Activation Energy ◽  
Optical Properties ◽  
Optical Activity ◽  
Electrical Measurements ◽  
High Concentration ◽  
Electrical And Optical Properties ◽  
Shallow Donors ◽  
Substrate Temperatures

ABSTRACTThis paper reports the incorporation of erbium into MBE Si and Si/Ge alloys with substrate temperatures of 500°C and 700°C. Using a solid source MBE system, concentrations of erbium between 1018 and 1022 cm−3 have been studied by photoluminescence, electrical measurements, SIMS and TEM. We find no shallow donors or acceptors attributable to erbium but we observe a high concentration of deep states with an activation energy of ∼360 meV. The photoluminescence output is of greatest magnitude when [Er] =2 × 1018 cm−3. Above this concentration the onset of erbium precipitates can just be observed using TEM and at even higher concentrations structured growths of erbium suicide are apparent. The effect on the optical activity of Si:Er that has subsequently been implanted with oxygen is also reported.

scholarly journals The role of electron-stimulated desorption in focused electron beam induced deposition

2013 ◽  
Vol 4 ◽  
pp. 474-480 ◽  
Author(s):  
Willem F van Dorp ◽  
Thomas W Hansen ◽  
Jakob B Wagner ◽  
Jeff T M De Hosson
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Electron Beam ◽  
Electron Irradiation ◽  
Carbon Membrane ◽  
Average Value ◽  
Fundamental Process ◽  
Electron Stimulated Desorption ◽  
Substrate Temperatures

We present the results of our study about the deposition rate of focused electron beam induced processing (FEBIP) as a function of the substrate temperature with the substrate being an electron-transparent amorphous carbon membrane. When W(CO)6 is used as a precursor it is observed that the growth rate is lower at higher substrate temperatures. From Arrhenius plots we calculated the activation energy for desorption, E des, of W(CO)6. We found an average value for E des of 20.3 kJ or 0.21 eV, which is 2.5–3.0 times lower than literature values. This difference between estimates for E des from FEBIP experiments compared to literature values is consistent with earlier findings by other authors. The discrepancy is attributed to electron-stimulated desorption, which is known to occur during electron irradiation. The data suggest that, of the W(CO)6 molecules that are affected by the electron irradiation, the majority desorbs from the surface rather than dissociates to contribute to the deposit. It is important to take this into account during FEBIP experiments, for instance when determining fundamental process parameters such as the activation energy for desorption.

scholarly journals Optical properties of Diamond like Carbon films prepared by DC-PECVD

2014 ◽  
Vol 8 (2) ◽  
Author(s):  
S. Tshomo ◽  
A.K. Mohsin ◽  
B. Ismail ◽  
R. Hussin ◽  
M.n. Md.Yusuf ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Light Transmission ◽  
Optical Transition ◽  
Carbon Films ◽  
Hydrogen Gas ◽  
Diamond Like Carbon ◽  
Indirect Transition ◽  
Vis Spectroscopy ◽  
Higher Temperature ◽  
Substrate Temperatures

Diamond-like carbon (DLC) thin films were deposited at different substrate temperatures using methane and hydrogen gas in DC-PECVD at 2x10-1Torr. From the light transmission using UV-VIS spectroscopy it was found that the optical transition had changed from allowed indirect transition to allowed direct transition as the substrate temperature increased. The Optical gap increased with temperature, highest of 3.034 eV was observed at 573 K, beyond which it dropped. Colour of the film changed from light brownish to a colourless transparent film in the higher temperature. The Urbach energy decreased from 1.25 eV to 0.75 eV with increasing substrate temperature till 573 K and a slight increase after it. This trend is attributed to change in sp3/sp2 ratio or change in structure. The cluster size decreases with temperature, resulting in larger band gap and the structure more ordered. Similar pattern is also witnessed in the emission spectrum of the photoluminescence.

Investigation of Southern California Natural Gas Infrastructure to Transport and Store Hydrogen to Meet Electric Demand Based on a 100% Renewable Energy Portfolio

2020 ◽  
Author(s):  
Zahra Heydarzadeh ◽  
Jack Brouwer
Keyword(s):  
Renewable Energy ◽  
Natural Gas ◽  
Southern California ◽  
Electricity Demand ◽  
Hydrogen Gas ◽  
Underground Storage ◽  
Gas System ◽  
Natural Gas Transmission ◽  
Transmission And Distribution ◽  
Transmission Pipelines

Abstract In this research, we utilize Southern California (SoCal) natural gas transmission pipelines and underground storage resources for transporting and storing hydrogen gas for a 100% renewable energy penetration. The goal is to determine to what extent natural gas infrastructure can be used to deliver and store hydrogen to meet SoCal electric demand for a 100% renewable energy portfolio. Hydrogen is produced from solar power generation using electrolysis next to the gas transmission pipelines whenever it is available in quantities greater than the electricity demand. It was found that using four main transmission pipelines owned by Southern California Gas company (SoCalGas) to transport hydrogen from the point of production to the four underground storage fields to store and later generate electricity through fuel cells can transport and store hydrogen sufficient to meet 40% of the SoCal electricity demand. That is, without any investment in additional transmission and distribution infrastructure, and without any investment in energy storage, the idea of building solar farms in the desert and using only the gas system for storage and transmission and distribution leads to a 40% increase in renewable electricity for the state.

Computer Simulation of Annealing after Cluster Ion Implantation

1998 ◽  
Vol 532 ◽  
Author(s):  
Z. Insepov ◽  
T. Aoki ◽  
J. Matsuo ◽  
I. Yamada
Keyword(s):  
Activation Energy ◽  
Molecular Dynamics ◽  
Computer Simulation ◽  
Ion Implantation ◽  
Temperature Region ◽  
Diffusion Coefficients ◽  
Metropolis Monte Carlo ◽  
Cluster Ion ◽  
Higher Temperature ◽  
Substrate Temperatures

ABSTRACTMolecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed in this paper. The implanted B dopant diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The B diffusion coefficient shows an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2, was obtained for a low-temperature region, and a higher activation energy, ˜ 3 ev, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 ev, for B diffusion in Si.

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