Electrical and Optical Properties of Erbium in MBE Silicon and Si/Ge Alloys

1991 ◽  
Vol 220 ◽  
Author(s):  
H. Efeoglu ◽  
J. H. Evans ◽  
J. M. Langer ◽  
A. R. Peaker ◽  
N. L. Rowell ◽  
...  
Keyword(s):  
Activation Energy ◽  
Optical Properties ◽  
Optical Activity ◽  
Electrical Measurements ◽  
High Concentration ◽  
Electrical And Optical Properties ◽  
Shallow Donors ◽  
Substrate Temperatures

ABSTRACTThis paper reports the incorporation of erbium into MBE Si and Si/Ge alloys with substrate temperatures of 500°C and 700°C. Using a solid source MBE system, concentrations of erbium between 1018 and 1022 cm−3 have been studied by photoluminescence, electrical measurements, SIMS and TEM. We find no shallow donors or acceptors attributable to erbium but we observe a high concentration of deep states with an activation energy of ∼360 meV. The photoluminescence output is of greatest magnitude when [Er] =2 × 1018 cm−3. Above this concentration the onset of erbium precipitates can just be observed using TEM and at even higher concentrations structured growths of erbium suicide are apparent. The effect on the optical activity of Si:Er that has subsequently been implanted with oxygen is also reported.

scholarly journals Electrical behavior and Optical Properties of Copper oxide thin Films

2011 ◽  
Vol 8 (2) ◽  
pp. 638-645
Author(s):  
Baghdad Science Journal
Keyword(s):  
Optical Properties ◽  
Energy Gap ◽  
Spray Pyrolysis Method ◽  
Semiconductor Films ◽  
Electrical Behavior ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Correlated Barrier Hopping ◽  
Pyrolysis Method ◽  
Substrate Temperatures

In this work the structural, electrical and optical Properties of CuO semiconductor films had been studied, which prepared at three thickness (100, 200 and 500 nm) by spray pyrolysis method at 573K substrate temperatures on glass substrates from 0.2M CuCl2•2H2O dissolved in alcohol. Structural Properties shows that the films have only a polycrystalline CuO phase with preferential orientation in the (111) direction, the dc conductivity shows that all films have two activation energies, Ea1 (0.45-0.66 eV) and Ea2 (0.055-.0185 eV), CuO films have CBH (Correlated Barrier Hopping) mechanism for ac-conductivity. The energy gap between (1.5-1.85 eV).

Structural, Electrical and Optical Properties of Laser Deposited Thin Films of Srco0.8Fe0.2O3-δ

1994 ◽  
Vol 369 ◽  
Author(s):  
C. Zhang ◽  
H. Deng ◽  
J. Varon ◽  
B. Abeles ◽  
Y. Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Conductivity ◽  
Optical Properties ◽  
Optical Absorption ◽  
Laser Deposition ◽  
Electrical And Optical Properties ◽  
Thermally Activated ◽  
Characteristic Features

AbstractThin film SrCo0.8Fe0.2O3-δ were made by pulse laser deposition. The electrical conductivity is thermally activated in the temperature 25-500 °C with an activation energy of 0.17-0.19 eV and is temperature independant from 500-800 °C. The optical absorption shows characteristic features which are interpreted qualitatively in terms of a simple band structure diagram.

Influence of Substrate Temperature on the Structural, Electrical and Optical Properties of Al-Doped ZnO Films by RF Magnetron Sputtering

2011 ◽  
Vol 287-290 ◽  
pp. 2308-2313 ◽  
Author(s):  
Yi Hua Sun ◽  
Chen Hui Li ◽  
Wei Hao Xiong ◽  
Cai Hua Huang
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Optical Transmission ◽  
Visible Range ◽  
Zno Films ◽  
Soda Lime Glass ◽  
Deposition Condition ◽  
Electrical And Optical Properties ◽  
Substrate Temperatures

Transparent conducting aluminum-doped zinc oxide (AZO) films have been prepared on soda-lime glass substrates by radio frequency magnetron sputtering using a high density ceramic target at different substrate temperatures. The structural, morphology, electrical, and optical properties of the AZO thin films were investigated by X-ray diffraction, scanning electron microscope, Hall measurement, and optical transmission spectroscopy, and which were strongly influenced by substrate temperatures. Films with better texture, higher transmission, lower resistivity and larger carrier concentration were obtained for the samples fabricated at higher substrate temperature. The AZO film with the lowest resistivity of 4.63×10−4 Ω.cm and an average optical transmission of 92% in the visible range was deposited on the substrate heated at 450 °C. The optical bandgap depends on the deposition condition, and was in the range of 3.35~3.59 eV.

Influence of Sputtering Power and Substrate Temperature on Properties of Al2O3-Doped ZnO Films

2012 ◽  
Vol 557-559 ◽  
pp. 1945-1949
Author(s):  
Ge Yu ◽  
Ya Liu ◽  
Dan Hong Hong ◽  
Dong Lin Li ◽  
Jian Xin Zang
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Atomic Force ◽  
Argon Flow ◽  
Sputtering Power ◽  
Diffraction Peaks ◽  
Substrate Temperatures

Aluminum oxide-doped zinc oxide (AZO) films were deposited by radio frequency (RF) magnetron sputtering at various substrate temperatures and sputtering powers with pure argon flow. Their electrical and optical properties and microstructures were investigated by X-ray diffractometer (XRD), atomic force microscope (AFM), ultraviolet-visible spectrophotometer, four-probe tester. The investigation indicates that the electrical and optical properties and microstructures of the AZO films are remarkably influenced by substrate temperature and sputtering power. With the sputtering power increasing from 60W to 180W, the diffraction peaks rise significantly, the resistivity decreases quickly and the visible transmission is all quite high. When the substrate temperature increases from 25°C to 400°C, the diffraction peaks rise first and lower then both quickly, the resistivity decreases first sharply and then very slowly, and the visible transmission is also high. The films deposited at the substrate temperature 300°C with the sputtering power 180W have low resistivity 1.2×10–3 Ω•cm and high transmittance 92% at the same time.

Electrical and Optical Properties of Indium-Modified SeSbTe Thin Films for Low Power Memory Devices

2011 ◽  
Vol 324 ◽  
pp. 245-248
Author(s):  
Hassan Ghamlouche ◽  
Saleh Thaker Mahmoud ◽  
Naser Qamhieh ◽  
Ahmad I. Ayesh
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Optical Properties ◽  
Low Power ◽  
Phase Change ◽  
Electrical Conduction ◽  
Crystallization Temperature ◽  
Memory Devices ◽  
Electrical And Optical Properties ◽  
Conduction Activation Energy

The electrical and optical characteristics of indium doped Se2Sb2Te6phase-change alloy are studied. It is found that adding indium to Se2Sb2Te6 alloy (In0.3Se2Sb2Te6) increased the crystallization temperature and reduced the electrical conduction activation energy. The capacitance-temperature measurements showed a drastic change in the capacitance of the modified film when the temperature approaches the crystallization temperature, and eventually the capacitance becomes negative and nonlinear. The negativity and nonlinearity in the capacitancevoltage dependence can be attributed to the growth of conductive crystalline islands by increasing the temperature.

Hybrid Perovskite Phase Transition and Its Ionic, Electrical and Optical Properties

MRS Advances ◽  
2017 ◽  
Vol 2 (53) ◽  
pp. 3077-3082 ◽  
Author(s):  
Md Nadim Ferdous Hoque ◽  
Nazifah Islam ◽  
Kai Zhu ◽  
Zhaoyang Fan
Keyword(s):  
Phase Transition ◽  
Activation Energy ◽  
Optical Properties ◽  
Structural Phase Transition ◽  
Structural Phase ◽  
Perovskite Solar Cells ◽  
Normal Operation ◽  
Steady Increase ◽  
Electrical And Optical Properties ◽  
Hybrid Perovskite

ABSTRACTHybrid perovskite solar cells (PSCs) under normal operation will reach a temperature above ∼ 60 °C, across the tetragonal-cubic structural phase transition of methylammonium lead iodide (MAPbI3). Whether the structural phase transition could result in dramatic changes of ionic, electrical and optical properties that may further impact the PSC performances should be studied. Herein, we report a structural phase transition temperature of MAPbI3 thin film at ∼ 55 °C, but a striking contrast occurred at ∼ 45 °C in the ionic and electrical properties of MAPbI3 due to a change of the ion activation energy from 0.7 eV to 0.5 eV. The optical properties exhibited no sharp transition except for the steady increase of the bandgap with temperature. It was also observed that the activation energy for ionic migration steadily increased with increased grain sizes, and reduction of the grain boundary density reduced the ionic migration.

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