Instability in resistance and variation of activation energy with thickness and deposition temperature of CdSe0.6Te0.4thin films deposited at high substrate temperatures

1989 ◽  
Vol 65 (1) ◽  
pp. 237-240 ◽  
Author(s):  
P. J. Sebastian ◽  
V. Sivaramakrishnan
Keyword(s):  
Activation Energy ◽  
Deposition Temperature ◽  
High Substrate ◽  
Substrate Temperatures

scholarly journals Структура и свойства полученных методом магнетронного распыления тонких графитоподобных пленок

2018 ◽  
Vol 52 (7) ◽  
pp. 775
Author(s):  
А.Я. Виноградов ◽  
С.А. Грудинкин ◽  
Н.А. Беседина ◽  
С.В. Коняхин ◽  
М.К. Рабчинский ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Deposition Temperature ◽  
Near Infrared ◽  
Crystalline Silicon ◽  
Structural Defects ◽  
Electrical And Optical Properties ◽  
Absorption Intensity ◽  
Infrared Spectral ◽  
Ultraviolet Spectral Region ◽  
Substrate Temperatures

AbstractThe structural, electrical, and optical properties of thin graphite-like films produced by magnetron- assisted sputtering onto crystalline silicon and quartz at substrate temperatures in the range from 320 to 620°C are studied. From analysis of the Raman spectra, it is established that, as the substrate temperature is elevated, the crystallite size increases and the concentration of structural defects and the content of amorphous carbon in the phase composition of the films decrease. It is found that, as the substrate temperature is elevated, the maximum of the absorption intensity in the ultraviolet spectral region of the optical absorption spectra shifts to longer wavelengths and the absorption intensity in the visible and near-infrared spectral regions increases. As the deposition temperature is elevated, the conductivity of the films increases from 0.2 Ω^–1 cm^–1 at 320°C to 30 Ω^–1 cm^–1 at 620°C.

Comparison of Doping of Gey Si1-y:H (y>0.95) Films Deposited by Low Frequency PECVD at High (300°C) and Low (160°C) Temperatures

2012 ◽  
Vol 1426 ◽  
pp. 295-299
Author(s):  
Ismael Cosme ◽  
Andrey Kosarev ◽  
Francisco Temoltzi Avila ◽  
Adrian Itzmoyotl
Keyword(s):  
Activation Energy ◽  
Deposition Temperature ◽  
Solid Phase ◽  
Low Frequency ◽  
General Effect ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
High Deposition Temperature ◽  
B Doping ◽  
Low Deposition Temperature

ABSTRACTIn this work we present the results of comparative study n- and p-doping of Ge:H and Ge0.96Si0.04 :H films deposited by LF PECVD at high deposition temperature (HT) Td=300°C and low deposition temperature (LT) Td=160°C. The concentration of boron and phosphorus in solid phase was measured by means of SIMS technique. Such parameters as spectral dependence of absorption coefficient, room temperature conductivity σRT and activation energy Ea for both intrinsic and doped films were obtained. The doping range studied in gas phase was for boron [B]gas= 0 to 0.15% and for phosphorus [P]gas= 0 to 0.2%. In general effect of deposition temperature on P and B doping has been demonstrated. For LT films changes of [P]gas=0.04% to 0.22% resulted in more than 2 orders increasing conductivity and reducing activation energy from Ea=0.28 to 0.16 eV. HT films in the range of [P]gas=0.04% to 0.2% demonstrated saturation of conductivity. HT films showed continuous reducing Ea with increase of [P]gas. In the case of boron doping both HT and LT films had a minimum of conductivity at certain values of [B]gas=0.05% (LT films) and 0.04% (HT films) and related maximums of activation energy Ea(max) at the same doping with Ea(max)=0.47 eV for HT and Ea(max)=0.53 eV for LT films. It suggests a compensation of electron conductivity in un-doped films for low B doping. Further raising [B]gas leads to reducing Ea and the smallest Ea=0.27 eV was obtained at [B]gas=0.18% for HT films and Ea=0.33 eV at [B]gas=0.14% for LH films.

Reaction Kinetics of Atomic chlorine on Si(100)2×1

1992 ◽  
Vol 280 ◽  
Author(s):  
Kazuhiro Karahashi ◽  
Jiro Matsuo ◽  
Kei Horiuchi
Keyword(s):  
Activation Energy ◽  
Transition State ◽  
Solid Surface ◽  
Surface Reaction ◽  
Thermal Excitation ◽  
Silicon Substrates ◽  
Chlorine Atoms ◽  
Substrate Temperatures ◽  
Kinetics Of ◽  
Atomic Chlorine

ABSTRACTThe interaction of atomic chlorine with Si(100)2×1 surfaces was studied by using chlorine atom beams. The etching reaction of silicon substrates has been observed when chlorine atoms impinged on the chlorinated surface, at substrate temperatures below 600°C. The major desorption product is SiCl2. Studies of the temperature dependence of the reaction showed that the activation energy are 0.08 eV at 0.4 ML and 0.2 eV at 0.8 ML. These extremely low activation energies suggest that the surface reaction is mainly driven by the internal energy of incident atomic chlorine instead of thermal excitation from Si(100) solid surface. Therefore chlorine atoms enter the transition state without equilibrating at the surface prior to the reaction. The reaction strongly depends on the chlorine coverage on the surface. The reaction occurred above 0.3 ML. The etching probability of the surface reached a maximum at 0.4 ML, and decreased with increasing coverage.

Electrical and Optical Properties of Erbium in MBE Silicon and Si/Ge Alloys

1991 ◽  
Vol 220 ◽  
Author(s):  
H. Efeoglu ◽  
J. H. Evans ◽  
J. M. Langer ◽  
A. R. Peaker ◽  
N. L. Rowell ◽  
...  
Keyword(s):  
Activation Energy ◽  
Optical Properties ◽  
Optical Activity ◽  
Electrical Measurements ◽  
High Concentration ◽  
Electrical And Optical Properties ◽  
Shallow Donors ◽  
Substrate Temperatures

ABSTRACTThis paper reports the incorporation of erbium into MBE Si and Si/Ge alloys with substrate temperatures of 500°C and 700°C. Using a solid source MBE system, concentrations of erbium between 1018 and 1022 cm−3 have been studied by photoluminescence, electrical measurements, SIMS and TEM. We find no shallow donors or acceptors attributable to erbium but we observe a high concentration of deep states with an activation energy of ∼360 meV. The photoluminescence output is of greatest magnitude when [Er] =2 × 1018 cm−3. Above this concentration the onset of erbium precipitates can just be observed using TEM and at even higher concentrations structured growths of erbium suicide are apparent. The effect on the optical activity of Si:Er that has subsequently been implanted with oxygen is also reported.

scholarly journals The role of electron-stimulated desorption in focused electron beam induced deposition

2013 ◽  
Vol 4 ◽  
pp. 474-480 ◽  
Author(s):  
Willem F van Dorp ◽  
Thomas W Hansen ◽  
Jakob B Wagner ◽  
Jeff T M De Hosson
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Electron Beam ◽  
Electron Irradiation ◽  
Carbon Membrane ◽  
Average Value ◽  
Fundamental Process ◽  
Electron Stimulated Desorption ◽  
Substrate Temperatures

We present the results of our study about the deposition rate of focused electron beam induced processing (FEBIP) as a function of the substrate temperature with the substrate being an electron-transparent amorphous carbon membrane. When W(CO)6 is used as a precursor it is observed that the growth rate is lower at higher substrate temperatures. From Arrhenius plots we calculated the activation energy for desorption, E des, of W(CO)6. We found an average value for E des of 20.3 kJ or 0.21 eV, which is 2.5–3.0 times lower than literature values. This difference between estimates for E des from FEBIP experiments compared to literature values is consistent with earlier findings by other authors. The discrepancy is attributed to electron-stimulated desorption, which is known to occur during electron irradiation. The data suggest that, of the W(CO)6 molecules that are affected by the electron irradiation, the majority desorbs from the surface rather than dissociates to contribute to the deposit. It is important to take this into account during FEBIP experiments, for instance when determining fundamental process parameters such as the activation energy for desorption.

On the Coercivity of Granular Fe-SiO2 Films

1988 ◽  
Vol 132 ◽  
Author(s):  
S. H. Liou ◽  
C. H. Chen ◽  
H. S. Chen ◽  
A. R. Kortan ◽  
C. L. Chien
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Temperature ◽  
High Substrate Temperature ◽  
Linear Temperature ◽  
Sio2 Films ◽  
High Substrate ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTThe coercivity of granular Fe embedded inside an SiO2 matrix was as high as 3 kOe at 6K, and 1.1 kOe at 300K. In this study, we observed a linear temperature (T) dependence of the coercivity for the samples prepared at a high substrate temperature (773K), and a T1/2 dependence of the coercivity for the sample prepared at a low substrate temperature (473K). This indicates that the microstructures of films prepared at different substrate temperatures are not the same. This phenomenon can be explained if we assume that there are interconnections between particles for the sample prepared at a high substrate temperature. We looked for evidence of interconnections between particles with transmission electron microscopy (TEM).

Computer Simulation of Annealing after Cluster Ion Implantation

1998 ◽  
Vol 532 ◽  
Author(s):  
Z. Insepov ◽  
T. Aoki ◽  
J. Matsuo ◽  
I. Yamada
Keyword(s):  
Activation Energy ◽  
Molecular Dynamics ◽  
Computer Simulation ◽  
Ion Implantation ◽  
Temperature Region ◽  
Diffusion Coefficients ◽  
Metropolis Monte Carlo ◽  
Cluster Ion ◽  
Higher Temperature ◽  
Substrate Temperatures

ABSTRACTMolecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed in this paper. The implanted B dopant diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The B diffusion coefficient shows an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2, was obtained for a low-temperature region, and a higher activation energy, ˜ 3 ev, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 ev, for B diffusion in Si.

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