scholarly journals Deposition of Boron-Doped Thin CVD Diamond Films from Methane-Triethyl Borate-Hydrogen Gas Mixture

Processes ◽  
2020 ◽  
Vol 8 (6) ◽  
pp. 666 ◽  
Author(s):  
Nikolay Ivanovich Polushin ◽  
Alexander Ivanovich Laptev ◽  
Boris Vladimirovich Spitsyn ◽  
Alexander Evgenievich Alexenko ◽  
Alexander Mihailovich Polyansky ◽  
...  
Keyword(s):  
Film Growth ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Diamond Growth ◽  
Structural Defects ◽  
Boron Doped Diamond ◽  
Diamond Deposition ◽  
Synthesis Conditions ◽  
Surface Etching ◽  
Boron Doped

Boron-doped diamond is a promising semiconductor material that can be used as a sensor and in power electronics. Currently, researchers have obtained thin boron-doped diamond layers due to low film growth rates (2–10 μm/h), with polycrystalline diamond growth on the front and edge planes of thicker crystals, inhomogeneous properties in the growing crystal’s volume, and the presence of different structural defects. One way to reduce structural imperfection is the specification of optimal synthesis conditions, as well as surface etching, to remove diamond polycrystals. Etching can be carried out using various gas compositions, but this operation is conducted with the interruption of the diamond deposition process; therefore, inhomogeneity in the diamond structure appears. The solution to this problem is etching in the process of diamond deposition. To realize this in the present work, we used triethyl borate as a boron-containing substance in the process of boron-doped diamond chemical vapor deposition. Due to the oxygen atoms in the triethyl borate molecule, it became possible to carry out an experiment on simultaneous boron-doped diamond deposition and growing surface etching without the requirement of process interruption for other operations. As a result of the experiments, we obtain highly boron-doped monocrystalline diamond layers with a thickness of about 8 μm and a boron content of 2.9%. Defects in the form of diamond polycrystals were not detected on the surface and around the periphery of the plate.

Diamond Coatings on Carbon Based Substrates

2015 ◽  
Vol 825-826 ◽  
pp. 605-612 ◽  
Author(s):  
Roland Haubner ◽  
Mario Lessiak
Keyword(s):  
Diamond Growth ◽  
Layer Formation ◽  
Diamond Coatings ◽  
Boron Doped Diamond ◽  
Diamond Deposition ◽  
Boron Doped ◽  
Wide Range ◽  
Carbon Substrates ◽  
Coated Carbon ◽  
Deposition Conditions

Diamond deposition on carbon substrates is difficult, because atomic hydrogen needed for the diamond growth, attacks the graphitic and amorphous carbon of the substrate. To reduce the etching effect, the duration till diamond layer formation should be short.By controlling the diamond deposition conditions, boron addition and seeding with diamond prior to the deposition, the formation of diamond coatings is possible.Diamond coated carbon substrates are of high interest for electrochemical applications because they show electrical conductivity and are chemically inert in a wide range. Boron doped diamond shows high overvoltage for hydrogen and oxygen and allows electrochemical reactions in water without decomposing it. Diamond was deposited on glassy carbon and electro-graphite.

Deposition of CVD Diamond Coatings on Carbon Fiber Composite Substrates

2017 ◽  
Vol 742 ◽  
pp. 419-426 ◽  
Author(s):  
Roland Haubner ◽  
Mario Lessiak
Keyword(s):  
Atomic Hydrogen ◽  
Bulk Material ◽  
Fiber Composite ◽  
Diamond Growth ◽  
Diamond Coatings ◽  
Carbon Fiber Composite ◽  
Boron Doped Diamond ◽  
Diamond Deposition ◽  
Boron Doped ◽  
Carbon Fibre Composites

Boron doped diamond coatings are used in electrochemistry, due to the high overvoltage for oxygen generation. Niobium is often used as bulk material, but also diamond deposition on titanium was demonstrated. For metallic bulk materials corrosion can take place in case of defects in the diamond coating. This problem can be avoided by using carbon based substrates. Diamond deposition on carbon substrates is difficult, because atomic Hydrogen needed for diamond growth attacks graphitic and amorphous carbon. These reactions have the effects that carbon in the substrate is etched and the amount of atomic hydrogen needed for diamond growth is reduced. To reduce the carbon etching on the substrate, the duration till diamond layer formation should be short. By controlling the diamond deposition conditions, boron addition and seeding with diamond prior to deposition, the formation of diamond coatings on carbon fibre composites (CFC) is possible. Electrochemical measurements of the boron doped diamond coatings verified the excellent electrochemical properties of the samples, e.g. good electrical conductivity, high overvoltage for oxygen and hydrogen but also chemical inertness.

STM Study of Diamond(001) Surface

1992 ◽  
Vol 242 ◽  
Author(s):  
Takashi Tsuno ◽  
Takahiro Imai ◽  
Yoshiki Nishibayashi ◽  
Naoji Fujimori
Keyword(s):  
Methane Concentration ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Partially Observed ◽  
Type Reconstruction ◽  
B Doping

ABSTRACTUndoped and boron-doped diamond epitaxial films were deposited on diamond(001) substrate by micro-wave plasma assisted chemical vapor deposition and their surfaces were studied by scanning tunneling microscopy in air. An atomic order resolution was confirmed for the observation.For the undoped epitaxial films, which showed 2×1 and 1×2 RHEED patterns, dimer type reconstruction was observed and it was considered that the growth occurs through the dimer row extension. In the case of B-doped films, the dimer reconstruction was also observed. However, 2×2 structure due to the absence of dimer was partially observed.The effect of boron concentration and methane concentration during epitaxial growth on the surface morphology were also studied. The morphology observed by STM became flatter, as the concentration of B-doping and methane concentration, during growth, increased.

Influence of Carbon Source Concentration on Characterization of Boron-Doped Diamond Electrodes

2011 ◽  
Vol 204-210 ◽  
pp. 1691-1696
Author(s):  
Yu Qiang Chen ◽  
Jiang Wei Lv ◽  
Hong Wei Jiang ◽  
Hong Yan Peng ◽  
Yu Jie Feng ◽  
...  
Keyword(s):  
Carbon Source ◽  
Phenol Degradation ◽  
Chemical Vapor ◽  
Crystalline Lattice ◽  
Boron Doped Diamond ◽  
Graphite Phase ◽  
Substitutional Site ◽  
Boron Doped ◽  
Source Concentration

A set of boron-doped diamond (BDD) electrodes were deposited on silicon substrates by direct current plasma chemical vapor deposition (DC-PCVD) system using different carbon source concentrations. The influence of carbon source concentration on characterization of BDD electrodes was investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy and phenol degradation. It was found that BDD films with different carbon source concentrations were polycrystalline films with (111) dominant orientation. The films grew well when carbon source concentration was less than 2.5%, while graphite phase began to form when carbon source concentration was increased to 3%. Boron atoms were located at the substitutional site or interstitial sites in the crystalline lattice of diamond films, and didn’t damage the structure of diamond crystal. Within 4 h, 100 mg/L phenol solution in 80 ml could be oxidized by all the electrodes with removal efficiency higher than 90%.

On the optimization of a dc arcjet diamond chemical vapor deposition reactor

1996 ◽  
Vol 11 (3) ◽  
pp. 694-702 ◽  
Author(s):  
S. W. Reeve ◽  
W. A. Weimer ◽  
D. S. Dandy
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Methyl Radical ◽  
Chemical Kinetic Model ◽  
Model Calculations ◽  
Chemical Vapor Deposition Reactor

Based on results from chemical kinetic model calculations, a method to improve diamond film growth in a dc arcjet chemical vapor deposition reactor has been developed. Introducing the carbon source gas (CH4) into an Ar/H2 plasma in close proximity to the substrate produced diamond films exhibiting simultaneous improvements in quality and mass deposition rates. These improvements result from a reduced residence time of the methane in the plasma which inhibits the hydrocarbon chemistry in the gas from proceeding significantly beyond methyl radical production prior to encountering the substrate. Improvements in growth rate were modest, increasing by only a factor of two. Optical emission actinometry measurements indicate that the flux of atomic hydrogen across the stagnation layer to the substrate is mass diffusion limited. Since diamond growth depends upon the flux of atomic H to the substrate, these results suggest that under the conditions examined here, a low atomic H flux to the substrate poses an upper limit on the attainable diamond growth rate.

Electrochemical Oxidation of Phenol in Water Solutions Using Nanocrystalline Boron-Doped Diamond Film Anode

2012 ◽  
Vol 1395 ◽  
Author(s):  
Jorge Arturo Lara Viera ◽  
Manoj K. Ram ◽  
Pedro Villalba ◽  
Mikhail Ladanov ◽  
Ashok Kumar
Keyword(s):  
Electrochemical Oxidation ◽  
Diamond Film ◽  
Microwave Plasma ◽  
Water Solution ◽  
Chemical Vapor ◽  
Test Sample ◽  
Sample Solution ◽  
Boron Doped Diamond ◽  
Plasma Chemical Vapor Deposition ◽  
Boron Doped

ABSTRACTThe present paper reports the utilization of a boron-doped nanocrystalline diamond film (BDD) in electrochemical oxidization (ECO) process of organic phenol compound in 0.1 M H2SO4 water solution. The nano BDD films were synthesized by microwave plasma chemical vapor deposition (MWPCVD), and then characterized by Raman spectroscopy and SEM before and after the electrochemical oxidation treatment. For the ECO treatment performed to the test sample solution, an observation of the first and the last voltammetric plots exhibited a qualitatively differences between the two plots where the first one represent the initial concentration and the last one the signal produced by the organic solution after treatment. UV-Vis analysis through the application of a standard calibration curve, quantitatively confirmed the composition of phenol remaining in the sample solution subdued to the ECO treatment.

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