Comment on ‘‘Effects of electron cyclotron resonance plasma thermal oxidation on the properties of polycrystalline silicon film’’ [Appl. Phys. Lett. 67, 1880 (1995)]

N. H. Nickel

doi:10.1063/1.117584

Comment on ‘‘Effects of electron cyclotron resonance plasma thermal oxidation on the properties of polycrystalline silicon film’’ [Appl. Phys. Lett. 67, 1880 (1995)]

Applied Physics Letters ◽

10.1063/1.117584 ◽

1996 ◽

Vol 69 (9) ◽

pp. 1330-1331 ◽

Cited By ~ 1

Author(s):

N. H. Nickel

Keyword(s):

Thermal Oxidation ◽

Cyclotron Resonance ◽

Polycrystalline Silicon ◽

Electron Cyclotron Resonance ◽

Silicon Film ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Polycrystalline Silicon Film ◽

Resonance Plasma

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Effects of electron cyclotron resonance plasma thermal oxidation on the properties of polycrystalline silicon film

Applied Physics Letters ◽

10.1063/1.114363 ◽

1995 ◽

Vol 67 (13) ◽

pp. 1880-1882 ◽

Cited By ~ 12

Author(s):

Jung‐Yeal Lee ◽

Chul‐Hi Han ◽

Choong‐Ki Kim ◽

Bok‐Ki Kim

Keyword(s):

Thermal Oxidation ◽

Cyclotron Resonance ◽

Polycrystalline Silicon ◽

Electron Cyclotron Resonance ◽

Silicon Film ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Polycrystalline Silicon Film ◽

Resonance Plasma

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Characteristics of amorphous and polycrystalline silicon films deposited at 120 °C by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581195 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1912-1916 ◽

Cited By ~ 31

Author(s):

Sanghoon Bae ◽

A. Kaan Kalkan ◽

Shangcong Cheng ◽

Stephen J. Fonash

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Polycrystalline Silicon ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Polycrystalline Silicon Films ◽

Resonance Plasma

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Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-Type Electron Cyclotron Resonance Plasma

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l220 ◽

1999 ◽

Vol 38 (Part 2, No. 3A) ◽

pp. L220-L222 ◽

Cited By ~ 5

Author(s):

Junsi Gao ◽

Hiroshi Nakashima ◽

Naofumi Sakai ◽

Dawei Gao ◽

Junli Wang ◽

...

Keyword(s):

Low Temperature ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Silicon Film ◽

Electron Cyclotron ◽

Epitaxial Silicon ◽

Electron Cyclotron Resonance Plasma ◽

Epitaxial Silicon Film ◽

Resonance Plasma

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Application of Electron Cyclotron Resonance Plasma Thermal Oxidation to Bottom Gate Polysilicon Thin-Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.930 ◽

1996 ◽

Vol 35 (Part 1, No. 2B) ◽

pp. 930-933

Author(s):

Jung-In Han ◽

Choong-Ki Kim ◽

Chul-Hi Han

Keyword(s):

Thin Film ◽

Thermal Oxidation ◽

Cyclotron Resonance ◽

Thin Film Transistors ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma ◽

Bottom Gate

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Pulse-time modulated electron cyclotron resonance plasma etching for highly selective, highly anisotropic, and less-charging polycrystalline silicon patterning

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587616 ◽

1994 ◽

Vol 12 (6) ◽

pp. 3300 ◽

Cited By ~ 46

Author(s):

Seiji Samukawa

Keyword(s):

Plasma Etching ◽

Cyclotron Resonance ◽

Polycrystalline Silicon ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Pulse Time ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Electron cyclotron resonance plasma and thermal oxidation mechanisms of germanium

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.579313 ◽

1994 ◽

Vol 12 (4) ◽

pp. 1309-1314 ◽

Cited By ~ 31

Author(s):

Y. Wang ◽

Y. Z. Hu ◽

E. A. Irene

Keyword(s):

Thermal Oxidation ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Oxidation Mechanisms ◽

Resonance Plasma

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Mechanisms for polycrystalline silicon defect passivation by hydrogenation in an electron cyclotron resonance plasma

Applied Physics Letters ◽

10.1063/1.114877 ◽

1995 ◽

Vol 67 (21) ◽

pp. 3099-3101 ◽

Cited By ~ 20

Author(s):

E. S. Cielaszyk ◽

K. H. R. Kirmse ◽

R. A. Stewart ◽

A. E. Wendt

Keyword(s):

Cyclotron Resonance ◽

Polycrystalline Silicon ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Defect Passivation ◽

Resonance Plasma

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Extremely high‐selective electron cyclotron resonance plasma etching for phosphorus‐doped polycrystalline silicon

Applied Physics Letters ◽

10.1063/1.103649 ◽

1990 ◽

Vol 57 (4) ◽

pp. 403-405 ◽

Cited By ~ 18

Author(s):

Seiji Samukawa ◽

Yasuhiro Suzuki ◽

Masami Sasaki

Keyword(s):

Plasma Etching ◽

Cyclotron Resonance ◽

Polycrystalline Silicon ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Phosphorus Doped ◽

Resonance Plasma

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Application of Electron Cyclotron Resonance Plasma Thermal Oxidation to Bottom Gate Polysilicon Thin Film Transistors

10.7567/ssdm.1995.pc-8-3 ◽

1995 ◽

Author(s):

Jung-In Han ◽

Jung-Yeal Lee ◽

Deuk-Sung Choi ◽

Choong-Ki Kim ◽

Chul-Hi Han

Keyword(s):

Thin Film ◽

Thermal Oxidation ◽

Cyclotron Resonance ◽

Thin Film Transistors ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma ◽

Bottom Gate

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Pulse‐time‐modulated electron cyclotron resonance plasma etching for highly selective, highly anisotropic, and notch‐free polycrystalline silicon patterning

Applied Physics Letters ◽

10.1063/1.111290 ◽

1994 ◽

Vol 64 (25) ◽

pp. 3398-3400 ◽

Cited By ~ 57

Author(s):

Seiji Samukawa

Keyword(s):

Plasma Etching ◽

Cyclotron Resonance ◽

Polycrystalline Silicon ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Pulse Time ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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