A modified broad beam ion source for low-energy hydrogen implantation

1998 ◽  
Vol 69 (3) ◽  
pp. 1499-1504 ◽  
Author(s):  
K. Otte ◽  
A. Schindler ◽  
F. Bigl ◽  
H. Schlemm
Keyword(s):  
Ion Source ◽  
Low Energy ◽  
Broad Beam ◽  
Hydrogen Implantation

Low energy broad beam multipole ion source

1994 ◽  
Vol 65 (4) ◽  
pp. 1371-1373
Author(s):  
D. L. Lu ◽  
J. F. Yang ◽  
S. F. Jiang
Keyword(s):  
Ion Source ◽  
Low Energy ◽  
Broad Beam

Effect of Low Energy Hydrogen Implants on Damage Caused by Argon Ion Beam Etching

1983 ◽  
Vol 25 ◽  
Author(s):  
A. Climent ◽  
J.-S. Wang ◽  
S. J. Fonash
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Hydrogen Passivation ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Hydrogen Implantation ◽  
Argon Ions ◽  
Argon Ion

ABSTRACTThe dry etching technologies reactive ion etching (RIE) and ion beam etching (IBE) have both been shown to cause a damaged layer at silicon surfaces. It has been demonstrated that this damage can be annealed out or, alternatively, it can be passivated with low energy hydrogen implants from a Kaufman ion source. This study further explores the hydrogen passivation approach by focusing on the effect of hydrogen implantation on damage caused by argon ion beam etching. The lighter hydrogen ions are actually shown ta cause more extensive damage than the heavier argon ions. However, by using low-energy hydrogen implants all damage, that present from the Ar and that generated during the hydrogen implant, can be passivated.

Enhancement of collimated low-energy broad-beam ion source with four-grid accelerator system

2003 ◽  
Vol 83 (23) ◽  
pp. 4722-4724 ◽  
Author(s):  
E. K. Wåhlin ◽  
M. Watanabe ◽  
J. Shimonek ◽  
D. Burtner ◽  
D. Siegfried
Keyword(s):  
Ion Source ◽  
Low Energy ◽  
Broad Beam ◽  
Accelerator System

Characterization and optimization of low-energy broad-beam ion source

2019 ◽  
Vol 8 (3) ◽  
pp. 354-359 ◽  
Author(s):  
Ali Atta ◽  
Hassan Mohamed Abdel-Hamid ◽  
Yasser Hassan Ali Fawzy ◽  
Mohamed Mahmoud El-Okr
Keyword(s):  
Ion Source ◽  
Low Energy ◽  
Broad Beam

Low-energy hydrogen implantation for silicon Schottky barrier modification

Vacuum ◽  
1986 ◽  
Vol 36 (11-12) ◽  
pp. 917-920 ◽  
Author(s):  
S Ashok ◽  
SA Ringel
Keyword(s):  
Schottky Barrier ◽  
Low Energy ◽  
Hydrogen Implantation

Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation

1989 ◽  
Vol 48 (1) ◽  
pp. 31-40 ◽  
Author(s):  
T. Zundel ◽  
A. Mesli ◽  
J. C. Muller ◽  
P. Siffert
Keyword(s):  
Hydrogen Diffusion ◽  
Low Energy ◽  
Hydrogen Implantation
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