2013 IEEE International Reliability Physics Symposium (IRPS)
Latest Publications

TOTAL DOCUMENTS

199

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781479901135, 9781479901128, 9781479901111

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories

2013 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2013.6531980 ◽

2013 ◽

Cited By ~ 7

Author(s):

S. M. Amoroso ◽

L. Gerrer ◽

F. Adamu-Lema ◽

S. Markov ◽

A. Asenov

Keyword(s):

Flash Memories ◽

Charge Loss ◽

Statistical Variability

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Correlating low energy neutron SER with broad beam neutron and 200 MeV proton SER for 22nm CMOS Tri-Gate devices

2013 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2013.6531989 ◽

2013 ◽

Cited By ~ 5

Author(s):

S. Jahinuzzaman ◽

B. Gill ◽

V. Ambrose ◽

N. Seifert

Keyword(s):

Low Energy ◽

Broad Beam ◽

Energy Neutron

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Detrimental impact of hydrogen passivation on NBTI and HC degradation

2013 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2013.6532125 ◽

2013 ◽

Cited By ~ 3

Author(s):

G. Pobegen ◽

M. Nelhiebel ◽

T. Grasser

Keyword(s):

Hydrogen Passivation ◽

Detrimental Impact

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Effects of positive and negative constant voltage stress on organic TFTs

2013 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2013.6532123 ◽

2013 ◽

Cited By ~ 4

Author(s):

N. Wrachien ◽

A. Cester ◽

D. Bari ◽

G. Meneghesso ◽

J. Kovac ◽

...

Keyword(s):

Constant Voltage ◽

Negative Constant ◽

Voltage Stress

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HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation

2013 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2013.6532014 ◽

2013 ◽

Cited By ~ 46

Author(s):

K. Joshi ◽

S. Hung ◽

S. Mukhopadhyay ◽

V. Chaudhary ◽

N. Nanaware ◽

...

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Localization of electrical active defects caused by reliability-related failure mechanism by the application of Lock-in Thermography

2013 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2013.6532027 ◽

2013 ◽

Cited By ~ 8

Author(s):

C. Schmidt ◽

K. Wadhwa ◽

A. Reverdy ◽

E. Reinders

Keyword(s):

Failure Mechanism ◽

Lock In

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Reliability characterization and FEM modeling of power devices under repetitive power pulsing

2013 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2013.6532033 ◽

2013 ◽

Cited By ~ 11

Author(s):

F. Pozzobon ◽

D. Paci ◽

G. Pizzo ◽

A. Buri ◽

S. Morin ◽

...

Keyword(s):

Power Devices ◽

Fem Modeling

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Wafer-level MEMS package and its reliability issues

2013 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2013.6532047 ◽

2013 ◽

Author(s):

S. Tanaka ◽

M. Esashi

Keyword(s):

Wafer Level

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Physical origins of plasma damage and its process/gate area effects on high-k metal gate technology

2013 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2013.6532015 ◽

2013 ◽

Cited By ~ 11

Author(s):

P. J. Liao ◽

S. H. Liang ◽

H. Y. Lin ◽

J. H. Lee ◽

Y. Lee ◽

...

Keyword(s):

Metal Gate ◽

Plasma Damage ◽

Area Effects ◽

High K

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Error-prediction analyses in 1X, 2X and 3Xnm NAND flash memories for system-level reliability improvement of solid-state drives (SSDs)

2013 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2013.6531979 ◽

2013 ◽

Cited By ~ 14

Author(s):

S. Tanakamaru ◽

M. Doi ◽

K. Takeuchi

Keyword(s):

Solid State ◽

System Level ◽

Error Prediction ◽

Nand Flash ◽

Solid State Drives ◽

Flash Memories ◽

Reliability Improvement

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2013 IEEE International Reliability Physics Symposium (IRPS)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories

Correlating low energy neutron SER with broad beam neutron and 200 MeV proton SER for 22nm CMOS Tri-Gate devices

Detrimental impact of hydrogen passivation on NBTI and HC degradation

Effects of positive and negative constant voltage stress on organic TFTs

HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation

Localization of electrical active defects caused by reliability-related failure mechanism by the application of Lock-in Thermography

Reliability characterization and FEM modeling of power devices under repetitive power pulsing

Wafer-level MEMS package and its reliability issues

Physical origins of plasma damage and its process/gate area effects on high-k metal gate technology

Error-prediction analyses in 1X, 2X and 3Xnm NAND flash memories for system-level reliability improvement of solid-state drives (SSDs)

2013 IEEE International Reliability Physics Symposium (IRPS)
Latest Publications