A 16 cm broad‐beam ion source for ion‐beam etching of quartz wafers

1996 ◽  
Vol 67 (3) ◽  
pp. 1009-1011
Author(s):  
Yusheng Rao ◽  
Ming Li ◽  
Bo Qi ◽  
Fei Li
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Ion Beam Etching ◽  
Broad Beam

Reactive Ion Beam Etching Using a Broad Beam ECR Ion Source

1982 ◽  
Vol 21 (Part 2, No. 1) ◽  
pp. L4-L6 ◽  
Author(s):  
Seitaro Matsuo ◽  
Yoshio Adachi
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Ecr Ion Source ◽  
Ion Beam Etching ◽  
Broad Beam ◽  
Reactive Ion Beam Etching

Ion Beam Etching of Biological Material in the Scanning Electron Microscope

1969 ◽  
Vol 27 ◽  
pp. 10-11
Author(s):  
Patrick Echlin ◽  
David Kynaston ◽  
Paul M. Knights
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Biological Material ◽  
Ion Beam ◽  
Ion Source ◽  
Ion Beam Etching ◽  
Dynamic Experiments ◽  
First Time ◽  
Scanning Electron

An ion source has been designed to operate in the chamber of the Stereoscan scanning electron microscope and provides facilities for etching specimens in situ. The source is a demountable cold cathode discharge type requiring only simple control.The ion beam described above has been used to progressively etch away hard or resilient biological material. This is the first time that ion beam etching of botanical specimens has been followed inside the scanning microscope, and marks the beginning of a range of dynamic experiments using this form of instrumentation.

Ultrahigh vacuum chemically assisted ion beam etching system with a three grid ion source

1997 ◽  
Vol 15 (3) ◽  
pp. 616-621 ◽  
Author(s):  
John V. Hryniewicz ◽  
Y. J. Chen ◽  
Shih Hsiang Hsu ◽  
Chau-Han D. Lee ◽  
Gyorgy A. Porkolab
Keyword(s):  
Ion Beam ◽  
Ultrahigh Vacuum ◽  
Ion Source ◽  
Ion Beam Etching ◽  
Etching System

Ion Beam Etching System for Mercury Cadmium Telluride and III-V Compound Semiconductors

1991 ◽  
Vol 236 ◽  
Author(s):  
Geoffrey K. Reeves ◽  
Patrick. W. Leech ◽  
Patrick Bond
Keyword(s):  
Cadmium Telluride ◽  
Mercury Cadmium Telluride ◽  
Ion Beam ◽  
Compound Semiconductors ◽  
Ion Source ◽  
Rotating Platform ◽  
Ion Beam Etching ◽  
Wide Range ◽  
Wet Chemical ◽  
Etching System

AbstractThis paper describes a laboratory built ion beam etching system and its performance when used for etching Hg1-xCdxTe, GaAs and InP. The etching system provides a means for forming device mesas on a wide range of semiconductors without having to resort to wet chemical etches. The system uses a Kaufmann ion source, a rotating platform and two flow controllers to allow the variation of gas ratios and flows.

scholarly journals Hermetic Protection of Rings by Ion Beam Sputter Coating with a Broad Beam Ion Source and a W-Shaped Hollow Sputter Target

2013 ◽  
Vol 38 (1) ◽  
pp. 97-100 ◽  
Author(s):  
Wolfgang Ensinger ◽  
Stefan Flege ◽  
Ruriko Hatada ◽  
Sevda Ayata ◽  
Takaomi Matsutani ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Broad Beam ◽  
Sputter Coating

Hollow Cold Cathode Ion Source for Reactive Ion-Beam Etching

1989 ◽  
Vol 158 ◽  
Author(s):  
A.I. Stognij ◽  
V.V. Tokarev
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Ion Source ◽  
Operating Parameters ◽  
Cold Cathode ◽  
Plasma Emitter ◽  
Ion Beam Etching ◽  
Pressure Discharge ◽  
Reactive Gas ◽  
Cold Cathode Ion Source

ABSTRACTA wide-aperture reactive gas ion source has been developed for various ion-beam processings in high vacuum (p < < 5×10−2 Pa). The peculiar feature of the ion source is that two-stage self-maintained low-pressure discharge is used here as a plasma emitter. This provides high operating parameters of the source along with simple diode-type structure.

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