Novel plastic strain‐relaxation mode in highly mismatched III‐V layers induced by two‐dimensional epitaxial growth

1995 ◽  
Vol 66 (17) ◽  
pp. 2265-2267 ◽  
Author(s):  
A. Trampert ◽  
E. Tournié ◽  
K. H. Ploog
Keyword(s):  
Plastic Strain ◽  
Epitaxial Growth ◽  
Strain Relaxation ◽  
Two Dimensional ◽  
Relaxation Mode

Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals

MRS Advances ◽  
2016 ◽  
Vol 1 (50) ◽  
pp. 3403-3408
Author(s):  
Fabio Isa ◽  
Arik Jung ◽  
Marco Salvalaglio ◽  
Yadira Arroyo Rojas Dasilva ◽  
Mojmír Meduňa ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Plastic Strain ◽  
Epitaxial Growth ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Space Filling ◽  
X Ray ◽  
Semiconductor Structures ◽  
Equilibrium Growth ◽  
Innovative Concept

ABSTRACT We present a new concept applicable to the epitaxial growth of dislocation-free semiconductor structures on a mismatched substrate with a thickness far exceeding the conventional critical thickness for plastic strain relaxation. This innovative concept is based on the out-of-equilibrium growth of compositionally graded alloys on deeply patterned substrates. We obtain space-filling arrays of individual crystals several micrometers wide in which the mechanism of strain relaxation is fundamentally changed from plastic to elastic. The complete absence of dislocations at and near the heterointerface may pave the way to realize CMOS integrated SiGe X-ray detectors.

Two-dimensional topological insulators exfoliated from Na3Bi-like Dirac semimetals

2021 ◽  
Author(s):  
Xiaoqiu Guo ◽  
Ruixin Yu ◽  
Jingwen Jiang ◽  
Zhuang Ma ◽  
Xiuwen Zhang
Keyword(s):  
Physical Properties ◽  
Epitaxial Growth ◽  
Topological Insulators ◽  
2D Materials ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Dirac Semimetals

Topological insulation is widely predicted in two-dimensional (2D) materials realized by epitaxial growth or van der Waals (vdW) exfoliation. Such 2D topological insulators (TI’s) host many interesting physical properties such...

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions

2014 ◽  
Vol 9 (12) ◽  
pp. 1024-1030 ◽  
Author(s):  
Xidong Duan ◽  
Chen Wang ◽  
Jonathan C. Shaw ◽  
Rui Cheng ◽  
Yu Chen ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Two Dimensional ◽  
Layered Semiconductor ◽  
Semiconductor Heterojunctions

scholarly journals Recent progress in epitaxial growth of two‐dimensional phosphorus

SmartMat ◽  
2021 ◽  
Author(s):  
Yihe Wang ◽  
Shuo Sun ◽  
Jialin Zhang ◽  
Yu Li Huang ◽  
Wei Chen
Keyword(s):  
Epitaxial Growth ◽  
Recent Progress ◽  
Two Dimensional

Stress relaxation during two-dimensional pseudomorphic epitaxial growth of metals

2001 ◽  
Vol 696 ◽  
Author(s):  
Stéphane Andrieu ◽  
Pascal Turban ◽  
Laurent Lapena ◽  
Pierre Muller
Keyword(s):  
Epitaxial Growth ◽  
Lattice Spacing ◽  
Young Modulus ◽  
Nucleation Density ◽  
Two Dimensional ◽  
Modulus Ratio ◽  
Plane Lattice ◽  
Diffraction Peaks ◽  
Correct Estimation ◽  
Diffraction Peak Width

AbstractThe analysis of RHEED diffraction peaks during two-dimensional (2D) pseudomorphic epitaxial growth leads to the well known RHEED oscillations but also to diffraction peak width and in-plane lattice spacing oscillations. These behaviors are evidenced in several metallic A/B systems in this paper. As in-plane lattice spacing oscillations are assumed to be due to elastic relaxation at the edge of the 2D Islands, we try to correlate the amplitude of the detected effect with the misfit. The width oscillations are assumed to be due to the scattering coming from islands. We actually show that the full width at half maximum (FWHM) at half coverage allows us to get a correct estimation of the nucleation density. We thus show experimentally that the in-plane lattice spacing oscillations amplitude depends on the nucleation density determined using FWHM measurements. Finally, a theoretical justification allows us to show that this amplitude also depends on the Young modulus ratio of both B and A layers.

scholarly journals Strain relaxation via formation of cracks in compositionally modulated two-dimensional semiconductor alloys

2018 ◽  
Vol 2 (1) ◽  
Author(s):  
Hossein Taghinejad ◽  
Ali A. Eftekhar ◽  
Philip M. Campbell ◽  
Brian Beatty ◽  
Mohammad Taghinejad ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Two Dimensional ◽  
Semiconductor Alloys ◽  
Formation Of Cracks

A van der Waals epitaxial growth of ultrathin two-dimensional Sn film on graphene covered Cu(111) substrate

2019 ◽  
Vol 115 (14) ◽  
pp. 141601 ◽  
Author(s):  
Haifei Wu ◽  
Jiahao Tang ◽  
Qifeng Liang ◽  
Biyun Shi ◽  
Yixiao Niu ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Van Der Waals ◽  
Two Dimensional
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