Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals

MRS Advances ◽  
2016 ◽  
Vol 1 (50) ◽  
pp. 3403-3408
Author(s):  
Fabio Isa ◽  
Arik Jung ◽  
Marco Salvalaglio ◽  
Yadira Arroyo Rojas Dasilva ◽  
Mojmír Meduňa ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Plastic Strain ◽  
Epitaxial Growth ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Space Filling ◽  
X Ray ◽  
Semiconductor Structures ◽  
Equilibrium Growth ◽  
Innovative Concept

ABSTRACT We present a new concept applicable to the epitaxial growth of dislocation-free semiconductor structures on a mismatched substrate with a thickness far exceeding the conventional critical thickness for plastic strain relaxation. This innovative concept is based on the out-of-equilibrium growth of compositionally graded alloys on deeply patterned substrates. We obtain space-filling arrays of individual crystals several micrometers wide in which the mechanism of strain relaxation is fundamentally changed from plastic to elastic. The complete absence of dislocations at and near the heterointerface may pave the way to realize CMOS integrated SiGe X-ray detectors.

scholarly journals Erratum: “X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth” [J. Appl. Phys. 110, 113502 (2011)]

2013 ◽  
Vol 113 (19) ◽  
pp. 199901
Author(s):  
Takuo Sasaki ◽  
Hidetoshi Suzuki ◽  
Masamitu Takahasi ◽  
Yoshio Ohshita ◽  
Itaru Kamiya ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth

2011 ◽  
Vol 110 (11) ◽  
pp. 113502 ◽  
Author(s):  
Takuo Sasaki ◽  
Hidetoshi Suzuki ◽  
Masamitu Takahasi ◽  
Yoshio Ohshita ◽  
Itaru Kamiya ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

The Evolution of Strain Relaxation Close to The Critical Thickness

1993 ◽  
Vol 317 ◽  
Author(s):  
P. Kidd ◽  
P.F. Fewster
Keyword(s):  
Residual Strain ◽  
Strain Field ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Strain Fields ◽  
X Ray ◽  
Local Relaxation ◽  
Homogeneous Strain

ABSTRACTHigh resolution X-ray diffraction space mapping has been used to follow the change in the distribution of residual strain and localised relaxation in low mismatched epitaxial layers. Using this new technique, we have obtained a series of diffraction space maps of partially relaxed epitaxial layers of In.1Ga.9As on GaAs. The layers have different thicknesses and hence different degrees of strain relaxation. The diffuse scatter close to the Bragg peaks provides information about the imperfect and distorted regions in the structure and this has allowed us to examine the extent and distribution of residual strain close to the dislocations. We have followed the evolution of local relaxation, which is confined initially to regions around isolated dislocations, through to the case of overlapping dislocation strain fields, leading to a more homogeneous strain field distribution and microscopic and macroscopic tilting of the layers.

POSSIBLE ABNORMAL MECHANISM FOR LATTICE STRAIN RELAXATION IN La0.7Ca0.3MnO3 THIN FILM

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2415-2420 ◽  
Author(s):  
W. S. TAN ◽  
Q. J. JIA ◽  
J. GAO
Keyword(s):  
Critical Thickness ◽  
Lattice Strain ◽  
Strain Relaxation ◽  
Grazing Incidence ◽  
Lattice Parameter ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lcmo Film ◽  
Oriented Single Crystal

La 0.7 Ca 0.3 MnO 3(LCMO) thin films with the thickness of 50 nm were deposited on (001)-oriented single crystal SrTiO 3(STO), MgO and α- Al 2 O 3(ALO) by 90° off-axis radio frequency magnetron sputtering. Grazing incidence X-ray diffraction technique, associated with normal X-ray diffraction, was performed to measure the in-plane lattice parameter and investigate the lattice strain and strain relaxation in LCMO films. The results indicated that critical thickness of strain relaxation is very small, which may be related to large mismatch between film and substrate. The mechanism for strain relaxation in LCMO film is perhaps different from that for tetragonal distortion.

Strain Relaxation During Solid-Phase Epitaxial Crystallisation Of GexSi1−x Alloy Layers with Depth Dependent Ge Compositions

1993 ◽  
Vol 321 ◽  
Author(s):  
Wah-Chung Wong ◽  
Robert G. Elliman
Keyword(s):  
Ion Implantation ◽  
Epitaxial Growth ◽  
Excellent Agreement ◽  
Critical Thickness ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Critical Values ◽  
Reliable Indicator ◽  
Critical Dose ◽  
Velocity Reduction

ABSTRACTSolid-phase epitaxial growth (SPEG) of amorphous GeSi alloy layers has been examined. It is shown that fully strained depth dependent GeSi alloy layers can be produced by multiple ion-implantation and SPEG for implant doses below critical values. For doses above these critical values strain relaxation is shown to occur during SPEG at a well defined depth, and to be correlated with a reduction in the SPEG velocity caused by roughening or faceting of the crystalline/amorphous interface. The velocity reduction is shown to be a reliable indicator of strain relaxation. Both the critical dose and the depth at which strain relaxation occurs are shown to be in excellent agreement with equilibrium critical thickness theory.

Strain Relaxation and In-Situ Observation of Voiding in Passivated Aluminum Alloy Lines.

1993 ◽  
Vol 308 ◽  
Author(s):  
Paul R. Besser ◽  
Thomas N. Marieb ◽  
John C. Bravman
Keyword(s):  
Strain Relaxation ◽  
Grazing Incidence ◽  
Scanning Transmission Electron Microscope ◽  
In Situ Observation ◽  
X Ray ◽  
Scanning Transmission ◽  
Length Width ◽  
Measured Strain ◽  
Ray Geometry

ABSTRACTStrain relaxation in passivated Al-0.5% Cu lines was measured using X-ray diffraction coupled with in-situ observation of the formation and growth of stress induced voids. Samples of 1 μm thick Al-0.5% Cu lines passivated with Si3N4 were heated to 380ºC, then cooled and held at 150ºC. During the test, principal strains along the length, width, and height of the line were determined using a grazing incidence x-ray geometry. From these measurements the hydrostatic strain in the metal was calculated and strain relaxation was observed. The thermal cycle was duplicated in a high voltage scanning transmission electron microscope equipped with a backscattered electron detector. The 1.25 μm wide lines were seen to have initial stress voids. Upon heating these voids reduced in size until no longer observable. Once the samples were cooled to 150ºC, voids reappeared and grew. The measured strain relaxation is discussed in terms of void and θ-phase (Al2Cu) formation.

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