Photoemissions related to the kink effect in GaAs metal‐semiconductor field‐effect transistors with an Al0.2Ga0.8As/GaAs buffer layer

1993 ◽  
Vol 63 (5) ◽  
pp. 648-650 ◽  
Author(s):  
Junzi Haruyama ◽  
Norio Goto ◽  
Yasunobu Nashimoto
Keyword(s):  
Buffer Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Kink Effect ◽  
Gaas Buffer Layer

Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer

2011 ◽  
Vol 20 (1) ◽  
pp. 017304 ◽  
Author(s):  
Xiao-Chuan Deng ◽  
Bo Zhang ◽  
You-Run Zhang ◽  
Yi Wang ◽  
Zhao-Ji Li
Keyword(s):  
Buffer Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Improved Performance

Exploring and suppressing the kink effect of black phosphorus field-effect transistors operating in the saturation regime

Nanoscale ◽  
2019 ◽  
Vol 11 (21) ◽  
pp. 10420-10428 ◽  
Author(s):  
Ying Xia ◽  
Guoli Li ◽  
Bei Jiang ◽  
Zhenyu Yang ◽  
Xingqiang Liu ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Black Phosphorus ◽  
Saturation Regime ◽  
Kink Effect ◽  
Current Characteristics

We study the ‘up-kick’ current characteristics observed in black phosphorus (BP) field-effect transistors while the BP thickness increased above 10 nm, and effectively suppress the kink effect via the N2 plasma treatment.

scholarly journals Organic field-effect transistors with molecularly doped polymer gate buffer layer

2012 ◽  
Vol 162 (21-22) ◽  
pp. 1887-1893 ◽  
Author(s):  
Yuji Yamagishi ◽  
Kei Noda ◽  
Hirofumi Yamada ◽  
Kazumi Matsushige
Keyword(s):  
Buffer Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Doped Polymer
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