Exploring and suppressing the kink effect of black phosphorus field-effect transistors operating in the saturation regime

Nanoscale ◽  
2019 ◽  
Vol 11 (21) ◽  
pp. 10420-10428 ◽  
Author(s):  
Ying Xia ◽  
Guoli Li ◽  
Bei Jiang ◽  
Zhenyu Yang ◽  
Xingqiang Liu ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Black Phosphorus ◽  
Saturation Regime ◽  
Kink Effect ◽  
Current Characteristics

We study the ‘up-kick’ current characteristics observed in black phosphorus (BP) field-effect transistors while the BP thickness increased above 10 nm, and effectively suppress the kink effect via the N2 plasma treatment.

scholarly journals Electrostatic Discharge Characteristics of SiGe Source/Drain PNN Tunnel FET

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 454
Author(s):  
You Wang ◽  
Yu Mao ◽  
Qizheng Ji ◽  
Ming Yang ◽  
Zhaonian Yang ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Computer Aided Design ◽  
Field Effect ◽  
Electrostatic Discharge ◽  
Field Effect Transistors ◽  
Test Method ◽  
Current Path ◽  
Simulation Results ◽  
Current Characteristics ◽  
Aided Design

Gate-grounded tunnel field effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. ESD test method of transmission line pulse is used to deeply analyze the current characteristics and working mechanism of Conventional TFET ESD impact. On this basis, a SiGe Source/Drain PNN (P+N+N+) tunnel field effect transistors (TFET) was proposed, which was simulated by Sentaurus technology computer aided design (TCAD) software. Simulation results showed that the trigger voltage of SiGe PNN TFET was 46.3% lower, and the failure current was 13.3% higher than Conventional TFET. After analyzing the simulation results, the parameters of the SiGe PNN TFET were optimized. The single current path of the SiGe PNN TFET was analyzed and explained in the case of gate grounding.

scholarly journals Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

2017 ◽  
Vol 34 (4) ◽  
pp. 047304 ◽  
Author(s):  
Shi-Li Yan ◽  
Zhi-Jian Xie ◽  
Jian-Hao Chen ◽  
Takashi Taniguchi ◽  
Kenji Watanabe
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Black Phosphorus ◽  
Energy Bandgap

Defect‐Engineered n‐Doping of WSe 2 via Argon Plasma Treatment and Its Application in Field‐Effect Transistors

2021 ◽  
pp. 2100718
Author(s):  
Junghun Kim ◽  
Hyunik Park ◽  
SangHyuk Yoo ◽  
Yeon‐Ho Im ◽  
Keonwook Kang ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Argon Plasma ◽  
N Doping

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

scholarly journals Complementary Black Phosphorus Nanoribbons Field-Effect Transistors and Circuits

2018 ◽  
Vol 65 (10) ◽  
pp. 4122-4128 ◽  
Author(s):  
Xuewei Feng ◽  
Lin Wang ◽  
Xin Huang ◽  
Li Chen ◽  
Kah Wee Ang
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Black Phosphorus

scholarly journals Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High-k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1804 ◽  
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Field Effect ◽  
Oxygen Plasma ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Oxygen Plasma Treatment ◽  
Calcination Process ◽  
Microwave Annealing ◽  
High K

We investigated the effects of various high-k gate dielectrics as well as microwave annealing (MWA) calcination and a postcalcination oxygen plasma treatment on the electrical properties and stability of electrospun indium gallium zinc oxide (IGZO)-nanofiber (NF)-based field-effect transistors (FETs). We found that the higher the dielectric constant of the gate dielectric, the better the electric field is transferred, resulting in the better performance of the IGZO NF FET. In addition, the MWA-calcined IGZO NF FET was superior to the conventional furnace annealing-calcined device in terms of the electrical properties of the device and the operation of resistor-loaded inverter, and it was proved that the oxygen plasma treatment further improved the performance. The results of the gate bias temperature stress test confirmed that the MWA calcination process and postcalcination oxygen plasma treatment greatly improved the stability of the IGZO NF FET by reducing the number of defects and charge traps. This verified that the MWA calcination process and oxygen plasma treatment effectively remove the organic solvent and impurities that act as charge traps in the chemical analysis of NF using X-ray photoelectron spectroscopy. Furthermore, it was demonstrated through scanning electron microscopy and ultraviolet-visible spectrophotometer that the MWA calcination process and postcalcination oxygen plasma treatment also improve the morphological and optical properties of IGZO NF.

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