scholarly journals Organic field-effect transistors with molecularly doped polymer gate buffer layer

2012 ◽  
Vol 162 (21-22) ◽  
pp. 1887-1893 ◽  
Author(s):  
Yuji Yamagishi ◽  
Kei Noda ◽  
Hirofumi Yamada ◽  
Kazumi Matsushige
Keyword(s):  
Buffer Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Doped Polymer

Low-temperature sol–gel processed AlOx gate dielectric buffer layer for improved performance in pentacene-based OFETs

RSC Advances ◽  
2016 ◽  
Vol 6 (34) ◽  
pp. 28801-28808 ◽  
Author(s):  
Femi Igbari ◽  
Qi-Xun Shang ◽  
Yue-Min Xie ◽  
Xiu-Juan Zhang ◽  
Zhao-Kui Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Organic Field Effect Transistors ◽  
Gel Technique ◽  
Improved Performance

An approach to achieve improved performance in pentacene-based organic field effect transistors (OFETs) using high-k AlOx prepared by a low temperature sol–gel technique as a thin buffer layer on a SiO2 gate dielectric was demonstrated.

Enhancement of Charge Injection in Organic Field-Effect Transistors Through Semiconducting Organic Buffer Layer

2021 ◽  
Vol 21 (7) ◽  
pp. 3923-3928
Author(s):  
Gyujeong Lee ◽  
Hea-Lim Park ◽  
Sin-Hyung Lee ◽  
Min-Hoi Kim ◽  
Sin-Doo Lee
Keyword(s):  
Buffer Layer ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Systematic Investigation ◽  
Electrical Performance ◽  
Organic Field Effect Transistors ◽  
Semiconductor Interface ◽  
Molecular Semiconductors ◽  
Injection Barrier

We investigate the effect of a semiconducting organic buffer layer (SOBL) on the injection and transport of charges in organic field-effect transistors (OFETs). Here, two different injection barriers at the source/organic semiconductor interface are respectively studied with the aid of a numerical simulation: one is intermediate (0.4 eV), and the other is large energy barriers (0.6 eV). The introduction of nanostructure buffer layer, or SOBL, exhibits the decrease of potential loss at the contact interfaces, improving the electrical performance of the OFETs. It is also found that the energy level as well as the mobility of the SOBL plays an important role in determining the injection properties at the metal/organic hetero-interfaces and thus improving the device performance. Our systematic investigation on the injection barrier by the introduction of the nanostructure buffer layer will provide a useful guideline for the fabrication of high-performance FETs with molecular semiconductors.

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