High‐quality InAlAs grown by organometallic vapor phase epitaxy

1987 ◽  
Vol 51 (20) ◽  
pp. 1637-1639 ◽  
Author(s):  
Leye Aina ◽  
Mike Mattingly
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality

scholarly journals Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy

2002 ◽  
Vol 41 (Part 2, No. 11B) ◽  
pp. L1321-L1324 ◽  
Author(s):  
Fu-Hsiang Yang ◽  
Jih-Sheng Hwang ◽  
Ying-Jay Yang ◽  
Kuei-Hsien Chen ◽  
Jih-Hsiang Wang
Keyword(s):  
Vapor Phase ◽  
High Speed ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality

High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine

1988 ◽  
Vol 53 (4) ◽  
pp. 304-306 ◽  
Author(s):  
R. R. Saxena ◽  
J. E. Fouquet ◽  
V. M. Sardi ◽  
R. L. Moon
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality

High quality long‐wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine

1990 ◽  
Vol 56 (15) ◽  
pp. 1439-1441 ◽  
Author(s):  
B. I. Miller ◽  
M. G. Young ◽  
M. Oron ◽  
U. Koren ◽  
D. Kisker
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality ◽  
Long Wavelength

PHOTOCURRENT STUDY OF ERBIUM DELTA-DOPED InP GROWN BY ORGANOMETALLIC VAPOR PHASE EPITAXY

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4436-4440
Author(s):  
W. PECHARAPA ◽  
J. NUKEAW
Keyword(s):  
Electric Field ◽  
Vapor Phase ◽  
Exposure Time ◽  
Exposure Duration ◽  
Room Temperature ◽  
Vapor Phase Epitaxy ◽  
Significant Shift ◽  
Organometallic Vapor Phase Epitaxy ◽  
Quantum Structure ◽  
High Quality

The photocurrent of erbium delta-doped InP grown by organometallic vapor phase epitaxy was observed at room temperature. The clear PC spectra of doped samples reflect the high quality formation of ErP quantum structure in InP. The PC spectra of doped sample with different Er exposure duration show that the total number of ErP islands increase with increasing exposure time, reflected in the sharper PC spectra. When applying an electric field, the spectra of the doped sample exhibit significant shift with increasing field.

Organometallic vapor‐phase epitaxy of high‐quality Ga0.51In0.49P at high growth rates

1989 ◽  
Vol 66 (11) ◽  
pp. 5384-5387 ◽  
Author(s):  
D. S. Cao ◽  
A. W. Kimball ◽  
G. S. Chen ◽  
K. L. Fry ◽  
G. B. Stringfellow
Keyword(s):  
Vapor Phase ◽  
Growth Rates ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality

High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy

1986 ◽  
Vol 49 (20) ◽  
pp. 1384-1386 ◽  
Author(s):  
B. I. Miller ◽  
E. F. Schubert ◽  
U. Koren ◽  
A. Ourmazd ◽  
A. H. Dayem ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality

Growth of CDTE on GaAs and Si Substrates by Organometallic Vapor Phase Epitaxy

1993 ◽  
Vol 318 ◽  
Author(s):  
Ishwara Bhat
Keyword(s):  
Vapor Phase ◽  
Atomic Layer ◽  
Cdte Layer ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality ◽  
X Ray ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Direct Growth

ABSTRACTEpitaxial (100) CdTe layers have been grown by organometallic vapor phase epitaxy (OMVPE) on GaAs and Si substrates. A thin layer of CdTe was first grown by atomic layer epitaxy (ALE) on GaAs substrates followed by thicker CdTe layer by conventional organometallic vapor phase epitaxy (OMVPE). This process resulted in high quality (100) CdTe on GaAs substrates. On Si substrates, direct growth of CdTe resulted in only polycrystalline layers. Hence, a thin Ge buffer layer grown at low temperature followed by an interfacial layer of ZnTe was used to get high quality (100) CdTe on Si. The process developed here eliminates the high temperature (>850°C) deoxidation step generally required when Si substrates are used. The CdTe layers were characterized by X-ray diffraction and optical microscopy. X-ray rocking curve with full width at half maximum (FWHM) of about 260 arcsec has been obtained for a 4 um thick CdTe layer. The results presented demonstrate novel techniques to control the hetero-interfaces in order to grow high quality CdTe on GaAs and Si substrates.

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