Low‐threshold GaAs/AlGaAs quantum‐well lasers grown by organometallic vapor‐phase epitaxy using trimethylamine alane

1991 ◽  
Vol 70 (1) ◽  
pp. 432-435 ◽  
Author(s):  
W. S. Hobson ◽  
J. P. van der Ziel ◽  
A. F. J. Levi ◽  
J. O’Gorman ◽  
C. R. Abernathy ◽  
...  
1993 ◽  
Vol 62 (11) ◽  
pp. 1239-1241 ◽  
Author(s):  
Wei Lin ◽  
Chwan‐Yang Chang ◽  
Yuan‐Kuang Tu ◽  
Ting‐Arn Dai ◽  
Wen‐Jeng Ho ◽  
...  

1990 ◽  
Vol 01 (03n04) ◽  
pp. 347-367 ◽  
Author(s):  
KAZUHITO FURUYA ◽  
YASUYUKI MIYAMOTO

GaInAsP/InP organometallic vapor phase epitaxy (OMVPE) is widely used for the fabrication of lasers and detectors used in optical communication. Here we describe the apparatus and growth technique of OMVPE and point out important growth conditions to obtain device quality single-crystal materials. Our research includes the use of OMVPE for the study of quantum-well lasers, ballistic-transport electron devices and nanometer heterostructures.


1991 ◽  
Vol 59 (16) ◽  
pp. 1975-1977 ◽  
Author(s):  
W. S. Hobson ◽  
F. Ren ◽  
M. Lamont Schnoes ◽  
S. K. Sputz ◽  
T. D. Harris ◽  
...  

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