N+doping of gallium arsenide by rapid thermal oxidation of a silicon cap

1990 ◽  
Vol 57 (16) ◽  
pp. 1681-1683 ◽  
Author(s):  
D. K. Sadana ◽  
J. P. de Souza ◽  
F. Cardone
Keyword(s):  
Gallium Arsenide ◽  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
N Doping

Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

1994 ◽  
Vol 342 ◽  
Author(s):  
S.C. Sun ◽  
L.S. Wang ◽  
F.L. Yeh ◽  
T.S. Lai ◽  
Y.H. Lin
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Charge Trapping ◽  
Interface State ◽  
Constant Current ◽  
Mos Capacitor ◽  
Rapid Thermal Oxidation ◽  
Doped Silicon ◽  
State Generation ◽  
First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

A Novel Process Simulator for Rapid Thermal Oxidation: RAPIDOX

1990 ◽  
Vol 36 (3-4) ◽  
pp. 183-188
Author(s):  
S S Purkar ◽  
S Singh ◽  
A D Shaligram
Keyword(s):  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Process Simulator

Oxide Grown on Polycrystal Silicon by Rapid Thermal Oxidation in N[sub 2]O

2006 ◽  
Vol 153 (2) ◽  
pp. G128 ◽  
Author(s):  
Chyuan Haur Kao ◽  
Chao Sung Lai ◽  
Chung Len Lee
Keyword(s):  
Thermal Oxidation ◽  
Rapid Thermal Oxidation
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