A high-gain porous silicon metal-semiconductor-metal photodetector through rapid thermal oxidation and rapid thermal annealing

1998 ◽  
Vol 67 (5) ◽  
pp. 541-543 ◽  
Author(s):  
M.-K. Lee ◽  
Y.-C. Tseng ◽  
C.-H. Chu
1997 ◽  
Vol 470 ◽  
Author(s):  
A. T. Fiory

ABSTRACTTemperatures for lamp-heated rapid thermal processing of wafers with various back-side films were controlled by a Lucent Technologies pyrometer which uses a/c lamp ripple to compensate for emissivity. Process temperatures for anneals of arsenic and boron implants were inferred from post-anneal sheet resistance, and for rapid thermal oxidation, from oxide thickness. Results imply temperature control accuracy of 12°C to 17°C at 3 standard deviations.


1997 ◽  
Vol 70 (10) ◽  
pp. 1284-1286 ◽  
Author(s):  
Gu-Bo Li ◽  
Liang-Sheng Liao ◽  
Xiao-Bing Liu ◽  
Xiao-Yuan Hou ◽  
Xun Wang

2008 ◽  
Vol 11 (4) ◽  
pp. K44 ◽  
Author(s):  
Chyuan Haur Kao ◽  
Chao Sung Lai ◽  
M. C. Tsai ◽  
K. M. Fan ◽  
C. H. Lee ◽  
...  

1999 ◽  
Vol 25 (4) ◽  
pp. 304-306 ◽  
Author(s):  
A. G. Rozhin ◽  
N. I. Klyui ◽  
Yu. P. Piryatinskii ◽  
V. A. Semenovich

Sign in / Sign up

Export Citation Format

Share Document