Analysis of SF6and F2plasma etched silicon surfaces: An x‐ray photoelectron spectroscopy investigation

1990 ◽  
Vol 57 (25) ◽  
pp. 2649-2650 ◽  
Author(s):  
P. Brault ◽  
P. Ranson ◽  
H. Estrade‐Szwarckopf ◽  
B. Rousseau
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Surfaces ◽  
X Ray ◽  
Etched Silicon

Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

1999 ◽  
Vol 567 ◽  
Author(s):  
Masayuki Suzuki ◽  
Yoji Saito
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Oxide Films ◽  
Silicon Surfaces ◽  
Gaseous Mixtures ◽  
X Ray ◽  
Initial Stage ◽  
Thermal Stability Of

ABSTRACTWe tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

Chemical Structure of Native Oxide Grown on Hydrogenterminated Silicon Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
M. Takakura ◽  
T. Yasaka ◽  
S. Miyazaki ◽  
M. Hirose
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Pure Water ◽  
Silicon Surfaces ◽  
Native Oxide ◽  
Appreciable Amount ◽  
X Ray ◽  
Thermal Oxide ◽  
Phonon Peak ◽  
Strained Bonds

ABSTRACTChemical bonding features and suboxide compositions in native oxide grown on chemically-cleaned hydrogen-terminated Si(100) surfaces stored in pure water have been studied by using surface sensitive infrared spectroscopy and x-ray photoelectron spectroscopy. The LO phonon peak for the native oxide is located at 1210cm−1, which is shifted to a significantly lower wavenumber side than the ultrathin thermal oxide peak at 1250cm−1. This is because an appreciable amount of SiHx bonds are incorporated in the native oxide/Si interface and such hydrogen termination in the network dramatically reduces strained bonds in the interface. Very weak Si2+ suboxide signal from the oxide grown in pure water is also explained by the incorporated SiHx bonds which interrupt the Si2+ suboxide formation in the interface.

scholarly journals Phosphorus Behavior in Heavily Phosphorus-Doped Silicon Surfaces due to Annealing. X-Ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy.

Shinku ◽  
1995 ◽  
Vol 38 (3) ◽  
pp. 295-298 ◽  
Author(s):  
Wen Biao YING ◽  
Yusuke MIZOKAWA ◽  
Yoshitomo KAMIURA ◽  
Yong Bing YU ◽  
Masafumi NISHIMATSU ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Silicon Surfaces ◽  
Secondary Ion Mass Spectroscopy ◽  
X Ray ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Secondary Ion

Photoinduced Selective Deposition of Aluminium Thin Film Using Dimethylaluminum Hydride

1991 ◽  
Vol 236 ◽  
Author(s):  
Mitsugu Hanabusa ◽  
Hideki Ouchi ◽  
Kenji Ishida ◽  
Masahiro Kawasaki ◽  
Satoshi Shogen
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Surface Reaction ◽  
Silicon Oxide ◽  
Film Growth ◽  
X Ray ◽  
Etched Silicon ◽  
Substrate Surfaces ◽  
Deuterium Lamp ◽  
Dimethylaluminum Hydride

AbstractAluminum thin film was deposited via a photochemical surface reaction of dimethylaluminum hydride (DMAH) using a deuterium lamp. The period required to initiate the film growth differed with substrate, and making use of this result the film could be grown preferentially on silicon nitride and silicon oxide layers rather than on wet-etched silicon. On the basis of an x-ray photoelectron spectroscopy the observed dependence of photodeposition on substrate surfaces can be attributed to how DMAH is chemisorbed initially.

Controlled Stepwise Growth of Siloxane Chains Using Bivalent Building Units With Different Functionalities

2010 ◽  
Vol 1272 ◽  
Author(s):  
Nils Salingue ◽  
Dominic Lingenfelser ◽  
Pavel Prunici ◽  
Hess Peter
Keyword(s):  
Photoelectron Spectroscopy ◽  
Attenuated Total Reflection ◽  
Silicon Surfaces ◽  
Chain Growth ◽  
One Dimensional ◽  
X Ray ◽  
Sioh Group ◽  
Wet Chemical ◽  
Chemical Condensation

AbstractOrganic/inorganic hybrids of silicon and their subsequent chemical modification are of interest for tailoring and structuring surfaces on the nanoscale. The formation of monolayers on hydroxylated silicon surfaces was employed to synthesize molecular dimethylsiloxane chains by wet-chemical condensation reactions, using dimethylmonochlorosilane as the precursor. The SiH group of the resulting dimethylsilyl termination could be selectively oxidized to the SiOH group, which opened the possibility of bonding another species. By repeating the condensation and oxidation cycle the stepwise growth of one-dimensional dimethylsiloxane chains was achieved. The ongoing chain growth was characterized by attenuated total reflection (ATR) Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), and determination of the surface energy by contact-angle experiments.

Acceleration of Organic Contaminant Adsorption Onto Silicon Surfaces in the Presence of Residual Fluorine

1997 ◽  
Vol 477 ◽  
Author(s):  
Koichiro Saga ◽  
Takeshi Hattori
Keyword(s):  
Photoelectron Spectroscopy ◽  
Organic Contaminants ◽  
Surface Composition ◽  
Electrostatic Force ◽  
Silicon Wafers ◽  
Silicon Surfaces ◽  
Gas Chromatography Mass Spectrometry ◽  
Organic Contamination ◽  
X Ray ◽  
Polar Groups

ABSTRACTThe influence of fluorine atoms remaining after HF treatment on the adsorption of organic contaminants onto the surface of silicon wafers was investigated by analyzing the organic contaminants with gas chromatography-mass spectrometry following thermodesorption (TDGC/MS), and the surface composition with X-ray photoelectron spectroscopy (XPS). It has been found that residual fluorine on silicon surfaces after cleaning of the silicon wafers with either aqueous HF or anhydrous HF accelerates the adsorption of organic contamination onto the silicon surfaces. This would be due to the electrostatic force of attraction between the polar groups of organic compounds and the residual fluorine on the silicon surface.

Evaluation of the initial oxidation of heavily phosphorus doped silicon surfaces using angle-dependent X-ray photoelectron spectroscopy

1999 ◽  
Vol 343-344 ◽  
pp. 393-396 ◽  
Author(s):  
W.B. Ying ◽  
Y. Mizokawa ◽  
K. Tanahashi ◽  
Y. Kamiura ◽  
M. Iida ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Surfaces ◽  
Initial Oxidation ◽  
X Ray ◽  
Doped Silicon ◽  
Phosphorus Doped
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