Reconsidering X-ray Photoelectron Spectroscopy Quantification of Substitution Levels of Monolayers on Unoxidized Silicon Surfaces

2020 ◽  
Vol 124 (30) ◽  
pp. 16461-16477
Author(s):  
Minjia Hu ◽  
Erik J. Luber ◽  
Jillian M. Buriak
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Surfaces ◽  
X Ray

Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

1999 ◽  
Vol 567 ◽  
Author(s):  
Masayuki Suzuki ◽  
Yoji Saito
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Oxide Films ◽  
Silicon Surfaces ◽  
Gaseous Mixtures ◽  
X Ray ◽  
Initial Stage ◽  
Thermal Stability Of

ABSTRACTWe tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

Chemical Structure of Native Oxide Grown on Hydrogenterminated Silicon Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
M. Takakura ◽  
T. Yasaka ◽  
S. Miyazaki ◽  
M. Hirose
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Pure Water ◽  
Silicon Surfaces ◽  
Native Oxide ◽  
Appreciable Amount ◽  
X Ray ◽  
Thermal Oxide ◽  
Phonon Peak ◽  
Strained Bonds

ABSTRACTChemical bonding features and suboxide compositions in native oxide grown on chemically-cleaned hydrogen-terminated Si(100) surfaces stored in pure water have been studied by using surface sensitive infrared spectroscopy and x-ray photoelectron spectroscopy. The LO phonon peak for the native oxide is located at 1210cm−1, which is shifted to a significantly lower wavenumber side than the ultrathin thermal oxide peak at 1250cm−1. This is because an appreciable amount of SiHx bonds are incorporated in the native oxide/Si interface and such hydrogen termination in the network dramatically reduces strained bonds in the interface. Very weak Si2+ suboxide signal from the oxide grown in pure water is also explained by the incorporated SiHx bonds which interrupt the Si2+ suboxide formation in the interface.

scholarly journals Phosphorus Behavior in Heavily Phosphorus-Doped Silicon Surfaces due to Annealing. X-Ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy.

Shinku ◽  
1995 ◽  
Vol 38 (3) ◽  
pp. 295-298 ◽  
Author(s):  
Wen Biao YING ◽  
Yusuke MIZOKAWA ◽  
Yoshitomo KAMIURA ◽  
Yong Bing YU ◽  
Masafumi NISHIMATSU ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Silicon Surfaces ◽  
Secondary Ion Mass Spectroscopy ◽  
X Ray ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Secondary Ion

Controlled Stepwise Growth of Siloxane Chains Using Bivalent Building Units With Different Functionalities

2010 ◽  
Vol 1272 ◽  
Author(s):  
Nils Salingue ◽  
Dominic Lingenfelser ◽  
Pavel Prunici ◽  
Hess Peter
Keyword(s):  
Photoelectron Spectroscopy ◽  
Attenuated Total Reflection ◽  
Silicon Surfaces ◽  
Chain Growth ◽  
One Dimensional ◽  
X Ray ◽  
Sioh Group ◽  
Wet Chemical ◽  
Chemical Condensation

AbstractOrganic/inorganic hybrids of silicon and their subsequent chemical modification are of interest for tailoring and structuring surfaces on the nanoscale. The formation of monolayers on hydroxylated silicon surfaces was employed to synthesize molecular dimethylsiloxane chains by wet-chemical condensation reactions, using dimethylmonochlorosilane as the precursor. The SiH group of the resulting dimethylsilyl termination could be selectively oxidized to the SiOH group, which opened the possibility of bonding another species. By repeating the condensation and oxidation cycle the stepwise growth of one-dimensional dimethylsiloxane chains was achieved. The ongoing chain growth was characterized by attenuated total reflection (ATR) Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), and determination of the surface energy by contact-angle experiments.

Acceleration of Organic Contaminant Adsorption Onto Silicon Surfaces in the Presence of Residual Fluorine

1997 ◽  
Vol 477 ◽  
Author(s):  
Koichiro Saga ◽  
Takeshi Hattori
Keyword(s):  
Photoelectron Spectroscopy ◽  
Organic Contaminants ◽  
Surface Composition ◽  
Electrostatic Force ◽  
Silicon Wafers ◽  
Silicon Surfaces ◽  
Gas Chromatography Mass Spectrometry ◽  
Organic Contamination ◽  
X Ray ◽  
Polar Groups

ABSTRACTThe influence of fluorine atoms remaining after HF treatment on the adsorption of organic contaminants onto the surface of silicon wafers was investigated by analyzing the organic contaminants with gas chromatography-mass spectrometry following thermodesorption (TDGC/MS), and the surface composition with X-ray photoelectron spectroscopy (XPS). It has been found that residual fluorine on silicon surfaces after cleaning of the silicon wafers with either aqueous HF or anhydrous HF accelerates the adsorption of organic contamination onto the silicon surfaces. This would be due to the electrostatic force of attraction between the polar groups of organic compounds and the residual fluorine on the silicon surface.

Evaluation of the initial oxidation of heavily phosphorus doped silicon surfaces using angle-dependent X-ray photoelectron spectroscopy

1999 ◽  
Vol 343-344 ◽  
pp. 393-396 ◽  
Author(s):  
W.B. Ying ◽  
Y. Mizokawa ◽  
K. Tanahashi ◽  
Y. Kamiura ◽  
M. Iida ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Surfaces ◽  
Initial Oxidation ◽  
X Ray ◽  
Doped Silicon ◽  
Phosphorus Doped

scholarly journals In situ metalation of free base phthalocyanine covalently bonded to silicon surfaces

2014 ◽  
Vol 5 ◽  
pp. 2222-2229 ◽  
Author(s):  
Fabio Lupo ◽  
Cristina Tudisco ◽  
Federico Bertani ◽  
Enrico Dalcanale ◽  
Guglielmo G Condorelli
Keyword(s):  
Porous Silicon ◽  
Photoelectron Spectroscopy ◽  
Relevant Information ◽  
Silicon Surfaces ◽  
Porous Si ◽  
Wet Chemistry ◽  
X Ray ◽  
Covalently Bonded ◽  
Phthalocyanine Ring

Free 4-undecenoxyphthalocyanine molecules were covalently bonded to Si(100) and porous silicon through thermic hydrosilylation of the terminal double bonds of the undecenyl chains. The success of the anchoring strategy on both surfaces was demonstrated by the combination of X-ray photoelectron spectroscopy with control experiments performed adopting the commercially available 2,3,9,10,16,17,23,24-octakis(octyloxy)-29H,31H-phthalocyanine, which is not suited for silicon anchoring. Moreover, the study of the shape of the XPS N 1s band gave relevant information on the interactions occurring between the anchored molecules and the substrates. The spectra suggest that the phthalocyanine ring interacts significantly with the flat Si surface, whilst ring–surface interactions are less relevant on porous Si. The surface-bonded molecules were then metalated in situ with Co by using wet chemistry. The efficiency of the metalation process was evaluated by XPS measurements and, in particular, on porous silicon, the complexation of cobalt was confirmed by the disappearance in the FTIR spectra of the band at 3290 cm−1 due to –NH stretches. Finally, XPS results revealed that the different surface–phthalocyanine interactions observed for flat and porous substrates affect the efficiency of the in situ metalation process.

scholarly journals Reductive deposition of Au3+(aq) on oxidized silicon surfaces

2000 ◽  
Vol 78 (4) ◽  
pp. 516-519 ◽  
Author(s):  
Sefik Süzer ◽  
Ömer Dag
Keyword(s):  
Aqueous Solution ◽  
Corona Discharge ◽  
Oxidation State ◽  
Photoelectron Spectroscopy ◽  
Silicon Surface ◽  
Electroless Deposition ◽  
Reduction Potential ◽  
Gold Deposits ◽  
Silicon Surfaces ◽  
X Ray

X-ray photoelectron spectroscopy (XPS) is used to determine the oxidation state of gold deposited from an aqueous solution of AuCl4- on to various oxidized surfaces of silicon. Although the observed Au4f signal decreased with the thickness of the oxide layer, the oxidation state of Au was determined as 0 for all the samples analyzed. From the angular dependence of the Si2p and Au4f signals it was determined that Au is deposited on top of the oxidized surfaces of metallic silicon. It is postulated that from an aqueous solution of AuCl4-, gold would deposit in its zerovalent form on to any surface due to its large and positive electrochemical reduction potential (ε°red(Au3+ /Au) = +1.50 V) and the substrate plays a role only in providing active deposition sites. To further support the proposal, it is shown that the same process takes place even in inert and hydrophobic polypropylene substrates. Similarly, it is also shown that more gold deposits if the surface of the polypropylene is made less hydrophobic (but probably more active) via the industrially used corona discharge treatment.Key words: XPS, gold, electroless deposition, oxidized silicon surface.

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