Fermi level pinning on HF etched silicon surfaces investigated by photoelectron spectroscopy

1999 ◽  
Vol 17 (1) ◽  
pp. 164-169 ◽  
Author(s):  
R. Schlaf ◽  
R. Hinogami ◽  
M. Fujitani ◽  
S. Yae ◽  
Y. Nakato
Keyword(s):  
Fermi Level ◽  
Photoelectron Spectroscopy ◽  
Silicon Surfaces ◽  
Fermi Level Pinning ◽  
Etched Silicon

Analysis of SF6and F2plasma etched silicon surfaces: An x‐ray photoelectron spectroscopy investigation

1990 ◽  
Vol 57 (25) ◽  
pp. 2649-2650 ◽  
Author(s):  
P. Brault ◽  
P. Ranson ◽  
H. Estrade‐Szwarckopf ◽  
B. Rousseau
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Surfaces ◽  
X Ray ◽  
Etched Silicon

CdS and Cd-Free Buffer Layers on Solution Phase Grown Cu2ZnSn(SxSe1- x)4 :Band Alignments and Electronic Structure Determined with Femtosecond Ultraviolet Photoelectron Spectroscopy

2014 ◽  
Vol 1638 ◽  
Author(s):  
Richard Haight ◽  
Aaron Barkhouse ◽  
Wei Wang ◽  
Yu Luo ◽  
Xiaoyan Shao ◽  
...  
Keyword(s):  
Fermi Level ◽  
Photoelectron Spectroscopy ◽  
Solution Phase ◽  
Buffer Layers ◽  
Photoemission Spectroscopy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Band Bending ◽  
Pump Probe ◽  
Fermi Level Pinning ◽  
Band Alignments

ABSTRACTThe heterojunctions formed between solution phase grown Cu2ZnSn(SxSe1- x)4 (CZTS,Se) and a number of important buffer materials including CdS, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission spectroscopy (fs-UPS) and photovoltage spectroscopy. With this approach we extract the magnitude and direction of the CZTS,Se band bending, locate the Fermi level within the band gaps of absorber and buffer and measure the absorber/buffer band offsets under flatband conditions. We will also discuss two-color pump/probe experiments in which the band bending in the buffer layer can be independently determined. Finally, studies of the bare CZTS,Se surface will be discussed including our observation of mid-gap Fermi level pinning and its relation to Voc limitations and bulk defects.

Fermi-level pinning at the interface between metals and nitrogen-doped Ge2Sb2Te5 examined by x-ray photoelectron spectroscopy

2009 ◽  
Vol 95 (19) ◽  
pp. 192109 ◽  
Author(s):  
Lina Wei-Wei Fang ◽  
Rong Zhao ◽  
Jisheng Pan ◽  
Zheng Zhang ◽  
Luping Shi ◽  
...  
Keyword(s):  
Fermi Level ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Nitrogen Doped ◽  
Fermi Level Pinning

Fermi level pinning and band bending in δ-doped BaSnO3

2021 ◽  
Vol 118 (5) ◽  
pp. 052101
Author(s):  
Youjung Kim ◽  
Hyeongmin Cho ◽  
Kookrin Char
Keyword(s):  
Fermi Level ◽  
Band Bending ◽  
Fermi Level Pinning

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

2021 ◽  
pp. 2001212
Author(s):  
Tien Dat Ngo ◽  
Zheng Yang ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Inyong Moon ◽  
...  
Keyword(s):  
Fermi Level ◽  
High Performance ◽  
Van Der Waals ◽  
Cmos Inverter ◽  
Fermi Level Pinning

scholarly journals Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts

2017 ◽  
Vol 9 (22) ◽  
pp. 19278-19286 ◽  
Author(s):  
Pantelis Bampoulis ◽  
Rik van Bremen ◽  
Qirong Yao ◽  
Bene Poelsema ◽  
Harold J. W. Zandvliet ◽  
...  
Keyword(s):  
Fermi Level ◽  
Charge Transport ◽  
Metal Contacts ◽  
Fermi Level Pinning
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