Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy

1990 ◽  
Vol 56 (11) ◽  
pp. 1040-1042 ◽  
Author(s):  
T. J. de Lyon ◽  
J. M. Woodall ◽  
M. S. Goorsky ◽  
P. D. Kirchner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Lattice Contraction ◽  
Metalorganic Molecular Beam Epitaxy

Growth and Doping of AlAs by Mombe

1994 ◽  
Vol 340 ◽  
Author(s):  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk ◽  
W. S. Hobson ◽  
F. Ren
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Carbon Sources ◽  
Carbon Doping ◽  
Fully Depleted ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Dimethylethylamine Alane ◽  
Sims Analysis ◽  
Trimethylamine Alane

ABSTRACTA comparison of dimethylethylamine alane (DMEAA) and trimethylamine alane (TMAA) as aluminum sources and CBr4 and CC14 as carbon doping sources for deposition of AlAs by metalorganic molecular beam epitaxy (MOMBE) has been carried out. DMEAA was found to produce the lowest oxygen levels in AlAs, 5 x 1017 cm-3 VS. 1021 cm-3 for TMAA, even at growth temperatures as low as 500°C. This reduction is likely due to the absence of oxygenated solvents used during synthesis of the DMEAA. Undoped films grown from either source were fully depleted as-grown. Through the use of CBr 4, hole concentrations up to 4.5x1019 cm-3 were achieved in AlAs layers grown fiom DMEAA. Attempts to increase the hole concentration beyond this level resulted in a decrease in the hole concentration even though SIMS analysis showed the carbon concentration to increase with increasing dopant flow. Though the carbon sources did not appear to introduce additional oxygen, they appear to introduce other impurities, such as Cl and Br. Also, due to parasitic etching reactions with the adsorbed halogen, the use of these sources reduces the Al incorporation rate.

Carbon doping of AlAs using CCl4and CBr4during growth by metalorganic molecular‐beam epitaxy

1994 ◽  
Vol 65 (17) ◽  
pp. 2205-2207 ◽  
Author(s):  
C. R. Abernathy ◽  
J. D. MacKenzie ◽  
W. S. Hobson ◽  
P. W. Wisk
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Metalorganic Molecular Beam Epitaxy

The Thermal Stability of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy

1992 ◽  
Vol 262 ◽  
Author(s):  
Hyunchul Sohn ◽  
E. R. Weber ◽  
S. Nozaki ◽  
M. Konagai ◽  
K. Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Electron Diffraction Study ◽  
Gaas Layer ◽  
Annealed Sample ◽  
Misfit Dislocations ◽  
Lattice Contraction ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy

ABSTRACTHeavily carbon-doped GaAs thin films with a hole concentration of 5.8 × 1020 cm-3, grown by metalorganic molecular beam epitaxy (MOMBE), were annealed at 900°C for 30 minutes. The microstructural changes due to annealing were investigated by transmission electron microscopy. Electron diffraction study showed some evidence of carbon clustering on {111} in as-grown samples. A high density of precipitates was found in the annealed sample, together with a decrease of the lattice contraction and hole concentration. In the as-grown layer, misfit dislocations with only one type of Burgers vector were observed, while misfit dislocations with the several Burgers vectors were observed in [110] direction after annealing. The density of misfit dislocations in both <110> directions increased significantly even though the lattice contraction in carbon-doped GaAs decreased after annealing. A model is proposed to explain the change of misfit dislocation density in heavily carbon-doped GaAs layer.

Carbon doping and lattice contraction of GaAs films grown by conventional molecular beam epitaxy

1991 ◽  
Vol 69 (1) ◽  
pp. 511-513 ◽  
Author(s):  
W. E. Hoke ◽  
P. J. Lemonias ◽  
D. G. Weir ◽  
H. T. Hendriks ◽  
G. S. Jackson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Lattice Contraction ◽  
Gaas Films

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1750-1752 ◽  
Author(s):  
C. R. Abernathy ◽  
S. J. Pearton ◽  
R. Caruso ◽  
F. Ren ◽  
J. Kovalchik
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy
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