Carbon doping and lattice contraction of GaAs films grown by conventional molecular beam epitaxy

1991 ◽  
Vol 69 (1) ◽  
pp. 511-513 ◽  
Author(s):  
W. E. Hoke ◽  
P. J. Lemonias ◽  
D. G. Weir ◽  
H. T. Hendriks ◽  
G. S. Jackson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Lattice Contraction ◽  
Gaas Films

Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy

1990 ◽  
Vol 56 (11) ◽  
pp. 1040-1042 ◽  
Author(s):  
T. J. de Lyon ◽  
J. M. Woodall ◽  
M. S. Goorsky ◽  
P. D. Kirchner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Lattice Contraction ◽  
Metalorganic Molecular Beam Epitaxy

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

Growth and Doping of AlAs by Mombe

1994 ◽  
Vol 340 ◽  
Author(s):  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk ◽  
W. S. Hobson ◽  
F. Ren
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Carbon Sources ◽  
Carbon Doping ◽  
Fully Depleted ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Dimethylethylamine Alane ◽  
Sims Analysis ◽  
Trimethylamine Alane

ABSTRACTA comparison of dimethylethylamine alane (DMEAA) and trimethylamine alane (TMAA) as aluminum sources and CBr4 and CC14 as carbon doping sources for deposition of AlAs by metalorganic molecular beam epitaxy (MOMBE) has been carried out. DMEAA was found to produce the lowest oxygen levels in AlAs, 5 x 1017 cm-3 VS. 1021 cm-3 for TMAA, even at growth temperatures as low as 500°C. This reduction is likely due to the absence of oxygenated solvents used during synthesis of the DMEAA. Undoped films grown from either source were fully depleted as-grown. Through the use of CBr 4, hole concentrations up to 4.5x1019 cm-3 were achieved in AlAs layers grown fiom DMEAA. Attempts to increase the hole concentration beyond this level resulted in a decrease in the hole concentration even though SIMS analysis showed the carbon concentration to increase with increasing dopant flow. Though the carbon sources did not appear to introduce additional oxygen, they appear to introduce other impurities, such as Cl and Br. Also, due to parasitic etching reactions with the adsorbed halogen, the use of these sources reduces the Al incorporation rate.

Implantation Energy Selection in Molecular Beam Epitaxy GaAs Films on Si Substrates

1991 ◽  
Vol 8 (3) ◽  
pp. 149-152
Author(s):  
Xiao Guangming ◽  
Yin Shiduan ◽  
Zhang Jingping ◽  
Ding Aiju ◽  
Dong Aihua ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Implantation Energy ◽  
Si Substrates ◽  
Gaas Films

Tin‐doping effects in GaAs films grown by molecular beam epitaxy

1978 ◽  
Vol 49 (9) ◽  
pp. 4854-4861 ◽  
Author(s):  
C. E. C. Wood ◽  
B. A. Joyce
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Doping Effects ◽  
Gaas Films
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