The Thermal Stability of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy

1992 ◽  
Vol 262 ◽  
Author(s):  
Hyunchul Sohn ◽  
E. R. Weber ◽  
S. Nozaki ◽  
M. Konagai ◽  
K. Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Electron Diffraction Study ◽  
Gaas Layer ◽  
Annealed Sample ◽  
Misfit Dislocations ◽  
Lattice Contraction ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy

ABSTRACTHeavily carbon-doped GaAs thin films with a hole concentration of 5.8 × 1020 cm-3, grown by metalorganic molecular beam epitaxy (MOMBE), were annealed at 900°C for 30 minutes. The microstructural changes due to annealing were investigated by transmission electron microscopy. Electron diffraction study showed some evidence of carbon clustering on {111} in as-grown samples. A high density of precipitates was found in the annealed sample, together with a decrease of the lattice contraction and hole concentration. In the as-grown layer, misfit dislocations with only one type of Burgers vector were observed, while misfit dislocations with the several Burgers vectors were observed in [110] direction after annealing. The density of misfit dislocations in both <110> directions increased significantly even though the lattice contraction in carbon-doped GaAs decreased after annealing. A model is proposed to explain the change of misfit dislocation density in heavily carbon-doped GaAs layer.

Growth and Doping of AlAs by Mombe

1994 ◽  
Vol 340 ◽  
Author(s):  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk ◽  
W. S. Hobson ◽  
F. Ren
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Carbon Sources ◽  
Carbon Doping ◽  
Fully Depleted ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Dimethylethylamine Alane ◽  
Sims Analysis ◽  
Trimethylamine Alane

ABSTRACTA comparison of dimethylethylamine alane (DMEAA) and trimethylamine alane (TMAA) as aluminum sources and CBr4 and CC14 as carbon doping sources for deposition of AlAs by metalorganic molecular beam epitaxy (MOMBE) has been carried out. DMEAA was found to produce the lowest oxygen levels in AlAs, 5 x 1017 cm-3 VS. 1021 cm-3 for TMAA, even at growth temperatures as low as 500°C. This reduction is likely due to the absence of oxygenated solvents used during synthesis of the DMEAA. Undoped films grown from either source were fully depleted as-grown. Through the use of CBr 4, hole concentrations up to 4.5x1019 cm-3 were achieved in AlAs layers grown fiom DMEAA. Attempts to increase the hole concentration beyond this level resulted in a decrease in the hole concentration even though SIMS analysis showed the carbon concentration to increase with increasing dopant flow. Though the carbon sources did not appear to introduce additional oxygen, they appear to introduce other impurities, such as Cl and Br. Also, due to parasitic etching reactions with the adsorbed halogen, the use of these sources reduces the Al incorporation rate.

P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 9B) ◽  
pp. L1609-L1611 ◽  
Author(s):  
Jun-ichi Shirakashi ◽  
Takumi Yamada ◽  
Ming Qi ◽  
Shinji Nozaki ◽  
Kiyoshi Takahashi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 5A) ◽  
pp. L875-L875 ◽  
Author(s):  
Takeshi Akatsuka ◽  
Ryuji Miyake ◽  
Shinji Nozaki ◽  
Takumi Yamada ◽  
Makoto Konagai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

Raman Scattering by Lo Pronon-Plasmon Coupled Mode in Heavily Carbon Doped P-Type InGsAs

1993 ◽  
Vol 325 ◽  
Author(s):  
Ming Qi ◽  
Jinsheng Luo ◽  
Junichi Shirakashi ◽  
Eisuke Tokumitsu ◽  
Shinji Nozaki ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Dominant Role ◽  
Peak Position ◽  
Carbon Doped ◽  
Coupled Mode ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type ◽  
Doping Case

AbstractThe Raman scattering from LO phonon–plasmon coupled (LOPC) mode in heavily carbon doped p–type InxGa1–xAs grown by metalorganic molecular beam epitaxy (MOMBE) was studied experimentally. Only one LOPC mode appears between the GaAs–like and InAs–like LO modes was observed. The peak position of the LOPC mode is near the GaAs–like TO mode frequency, and is not sensitive to the hole concentration. The intensity of the mode increases with increasing the carrier concentration while the two LO modes decrease and become unvisible under the higher doping level. The hole concentration dependence of the linewidth and intensity of the LOPC mode is very similar to that in p–type GaAs. It was shown that the plasmon damping effect plays a dominant role in the p–type doping case.

Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)

1992 ◽  
Vol 31 (Part 2, No. 3B) ◽  
pp. L296-L298 ◽  
Author(s):  
Isao Fujimoto ◽  
Shiro Nishine ◽  
Takumi Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Structural Aspects
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