Extended defect evolution in boron‐implanted Si during rapid thermal annealing and its effects on the anomalous boron diffusion

1990 ◽  
Vol 56 (13) ◽  
pp. 1254-1256 ◽  
Author(s):  
Y. M. Kim ◽  
G. Q. Lo ◽  
D. L. Kwong ◽  
A. F. Tasch ◽  
S. Novak
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Boron Diffusion ◽  
Extended Defect ◽  
Defect Evolution

Roles of Extended Defect Evolution on the Anomalous Diffusion of Boron in Si during Rapid Thermal Annealing

1991 ◽  
Vol 138 (4) ◽  
pp. 1122-1130 ◽  
Author(s):  
Y. M. Kim ◽  
G. Q. Lo ◽  
H. Kinoshita ◽  
D. L. Kwong ◽  
H. H. Tseng ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Anomalous Diffusion ◽  
Extended Defect ◽  
Defect Evolution

Modeling of Boron Diffusion and Activation for Nonequilibrium Rapid Thermal Annealing Application

1993 ◽  
Vol 303 ◽  
Author(s):  
H. Kinoshita ◽  
T. H. Huang ◽  
D. L. Kwong
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Dose ◽  
Boron Diffusion ◽  
Defect Model ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Wide Range ◽  
Simulation Results ◽  
Single Set

ABSTRACTThe diffusion and activation of ion implanted boron and BF2 during rapid thermal annealing (RTA) was modeled by considering the reaction kinetics between point defects and boron. The diffusion model uses the Monte Carlo generated point defect profiles, an extended defect model and a surface amorphization model for high dose BF2 implantation. Excellent simulation results have been achieved by using a single set of diffusion and kinetic parameters to model the enhanced diffusion of boron during RTA for a wide range of B and BF2 implant doses.

Measurement and modeling of boron diffusion in Si and strained Si1−xGexepitaxial layers during rapid thermal annealing

1993 ◽  
Vol 74 (9) ◽  
pp. 5520-5526 ◽  
Author(s):  
G. H. Loechelt ◽  
G. Tam ◽  
J. W. Steele ◽  
L. K. Knoch ◽  
K. M. Klein ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Boron Diffusion

Stability of Ultra-Thin Gate Oxides with Boron Doped Polysilicon Gate Structures After Rapid Thermal Annealing

1993 ◽  
Vol 303 ◽  
Author(s):  
Bojun Zhang ◽  
Dennis M. Maher ◽  
Mark S. Denker ◽  
Mark A. Ray
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Depth Profiling ◽  
Gate Oxide ◽  
Annealing Condition ◽  
Dopant Diffusion ◽  
Boron Diffusion ◽  
Gate Oxides ◽  
Diffusion Behavior ◽  
Polysilicon Gate

ABSTRACTWe report a systematic study of dopant diffusion behavior for thin gate oxides and polysilicon implanted gate structures. Boron behavior is emphasized and its behavior is compared to that of As+ and BF2+. Dopant activation is achieved by rapid thermal annealing. Test structures with 100 Å, 60 Å and 30 Å gate oxides and ion implanted polysilicon gate electrodes were fabricated and characterized after annealing by SIMS, SEM, TEM, and C-V rpeasurements. For arsenic implanted structures, no dopant diffusion through a gate oxide of 30 Å thickness and an annealing condition as high as 1 100*C/1Os was observed. For boron implanted structures, as indicated by SIMS depth profiling, structures annealed at 1000*C/10s exhibit a so-called critical condition for boron diffusion through a 30 Å gate oxide. Boron dopant penetration is clearly observed for 60 Å gate oxides at an annealing condition of 1050 0C/10s. The flatband voltage shift can be as high as 0.56 volts as indicated by C-V measurements for boron penetrated gate oxides. However, 100 Å gate oxides are good diffusion barriers for boron at an annealing condition of 1100°C/10s. For BF2 implanted structures, the diffusion behavior is consistent with behavior reported in the literature.

Anomalous Transient Diffusion of Ion Implanted Boron during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
Y. M. Kim ◽  
G. Q. Lo ◽  
D. L. Kwong ◽  
H. H. Tseng ◽  
R. Hance
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Anomalous Diffusion ◽  
Low Dose ◽  
Silicon Wafers ◽  
Silicon Ions ◽  
Defect Evolution ◽  
Boron Implantation ◽  
Silicon Implantation ◽  
Ion Implanted

ABSTRACTEffects of defect evolution during rapid thermal annealing (RTA) on the anomalous diffusion of ion implanted boron have been studied by implanting silicon ions prior to boron implantation with doses ranging from 1 × 1014cm−2 to 1 × 1016cm−2 at energies ranging from 20 to 150 KeV into silicon wafers. Diffusion of boron atoms implanted into a Si preamorphized layer during RTA is found to be anomalous in nature, and the magnitude of boron displacement depends on the RTA temperature. While RTA of preamorphized samples at 1150°C shows an enhanced boron displacement compared to that in crystalline samples, a reduced displacement is observed in preamorphized samples annealed by RTA at 1000°C. In addition, low dose pre-silicon implantation enhances the anomalous displacement significantly, especially at high RTA temperatures (1 150°C). Finally, the anomalous diffusion is found to depend strongly on the defect evolution during RTA.

Extended defect removal in silicon by rapid thermal annealing

1990 ◽  
Vol 12 (12) ◽  
pp. 1593-1601 ◽  
Author(s):  
L. Calcagno ◽  
C. Spinella ◽  
S. Coffa ◽  
E. Rimini
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Extended Defect

Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing

2004 ◽  
Vol 114-115 ◽  
pp. 184-192 ◽  
Author(s):  
C.J. Ortiz ◽  
F. Cristiano ◽  
B. Colombeau ◽  
A. Claverie ◽  
N.E.B. Cowern
Keyword(s):  
Thermal Annealing ◽  
Extended Defect ◽  
Defect Evolution ◽  
Ion Implanted

Diffusion and Activation During Rapid Thermal Annealing of Implanted Boron in Silicon

1985 ◽  
Vol 52 ◽  
Author(s):  
N E B Cowern ◽  
K J Yallup ◽  
D J Godfrey ◽  
D G Hasko ◽  
R A McMahon ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Crystalline Silicon ◽  
Numerical Models ◽  
Analytical Techniques ◽  
Silicon Substrates ◽  
Extended Defect ◽  
Diffusion Enhancement ◽  
High Doses ◽  
Concentration Dependent Diffusivity

ABSTRACTThe diffusion and activation of implanted boron in silicon during rapid thermal annealing (RTA) has been studied using the analytical techniques of SIMS, TEM, and sheet resistance measurements. Both crystalline and pre-amorphised silicon substrates were investigated. Data analysis in conjunction with a range of numerical models indicates some novel features of boron RTA, as well as accounting for previously observed features. In particular, a large transient diffusion enhancement coupled with an increase of electrical activity, are seen at short anneal times, in the case of crystalline silicon substrates. A non-equilibrium diffusion enhancement of a different type is also seen at much longer times, in both crystalline and pre-amorphised samples implanted to high doses. This second enhancement persists after all the precipitated boron formed on implantation has become substitutional. TEM studies show that the transient enhancement may be associated with the evolution of extended defect structures during the early stages of annealing. Both types of enhancement can be well represented by multiplying the ‘normal’ concentration-dependent diffusivity (with β=0.5) by a factor f>1.

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