Roles of Extended Defect Evolution on the Anomalous Diffusion of Boron in Si during Rapid Thermal Annealing

1991 ◽  
Vol 138 (4) ◽  
pp. 1122-1130 ◽  
Author(s):  
Y. M. Kim ◽  
G. Q. Lo ◽  
H. Kinoshita ◽  
D. L. Kwong ◽  
H. H. Tseng ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Anomalous Diffusion ◽  
Extended Defect ◽  
Defect Evolution

Anomalous Transient Diffusion of Ion Implanted Boron during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
Y. M. Kim ◽  
G. Q. Lo ◽  
D. L. Kwong ◽  
H. H. Tseng ◽  
R. Hance
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Anomalous Diffusion ◽  
Low Dose ◽  
Silicon Wafers ◽  
Silicon Ions ◽  
Defect Evolution ◽  
Boron Implantation ◽  
Silicon Implantation ◽  
Ion Implanted

ABSTRACTEffects of defect evolution during rapid thermal annealing (RTA) on the anomalous diffusion of ion implanted boron have been studied by implanting silicon ions prior to boron implantation with doses ranging from 1 × 1014cm−2 to 1 × 1016cm−2 at energies ranging from 20 to 150 KeV into silicon wafers. Diffusion of boron atoms implanted into a Si preamorphized layer during RTA is found to be anomalous in nature, and the magnitude of boron displacement depends on the RTA temperature. While RTA of preamorphized samples at 1150°C shows an enhanced boron displacement compared to that in crystalline samples, a reduced displacement is observed in preamorphized samples annealed by RTA at 1000°C. In addition, low dose pre-silicon implantation enhances the anomalous displacement significantly, especially at high RTA temperatures (1 150°C). Finally, the anomalous diffusion is found to depend strongly on the defect evolution during RTA.

Extended defect removal in silicon by rapid thermal annealing

1990 ◽  
Vol 12 (12) ◽  
pp. 1593-1601 ◽  
Author(s):  
L. Calcagno ◽  
C. Spinella ◽  
S. Coffa ◽  
E. Rimini
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Extended Defect

Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing

2004 ◽  
Vol 114-115 ◽  
pp. 184-192 ◽  
Author(s):  
C.J. Ortiz ◽  
F. Cristiano ◽  
B. Colombeau ◽  
A. Claverie ◽  
N.E.B. Cowern
Keyword(s):  
Thermal Annealing ◽  
Extended Defect ◽  
Defect Evolution ◽  
Ion Implanted

Diffusion and Activation During Rapid Thermal Annealing of Implanted Boron in Silicon

1985 ◽  
Vol 52 ◽  
Author(s):  
N E B Cowern ◽  
K J Yallup ◽  
D J Godfrey ◽  
D G Hasko ◽  
R A McMahon ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Crystalline Silicon ◽  
Numerical Models ◽  
Analytical Techniques ◽  
Silicon Substrates ◽  
Extended Defect ◽  
Diffusion Enhancement ◽  
High Doses ◽  
Concentration Dependent Diffusivity

ABSTRACTThe diffusion and activation of implanted boron in silicon during rapid thermal annealing (RTA) has been studied using the analytical techniques of SIMS, TEM, and sheet resistance measurements. Both crystalline and pre-amorphised silicon substrates were investigated. Data analysis in conjunction with a range of numerical models indicates some novel features of boron RTA, as well as accounting for previously observed features. In particular, a large transient diffusion enhancement coupled with an increase of electrical activity, are seen at short anneal times, in the case of crystalline silicon substrates. A non-equilibrium diffusion enhancement of a different type is also seen at much longer times, in both crystalline and pre-amorphised samples implanted to high doses. This second enhancement persists after all the precipitated boron formed on implantation has become substitutional. TEM studies show that the transient enhancement may be associated with the evolution of extended defect structures during the early stages of annealing. Both types of enhancement can be well represented by multiplying the ‘normal’ concentration-dependent diffusivity (with β=0.5) by a factor f>1.

Anomalous Diffusion of Intrinsic Defects in K+ Implanted ZnO using Li as Tracer

2012 ◽  
Vol 1394 ◽  
Author(s):  
L. Vines ◽  
P.T. Neuvonen ◽  
A. Yu. Kuznetsov ◽  
J. Wong-Leung ◽  
C. Jagadish ◽  
...  
Keyword(s):  
Active Region ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Anomalous Diffusion ◽  
Intrinsic Defects ◽  
Wide Region ◽  
Annealing Temperatures ◽  
Projected Range ◽  
And Migration ◽  
A Minor

ABSTRACTPotassium (K) ions have been implanted in hydrothermally grown ZnO to a dose of 1 × 1015 cm-2, followed by isochronal annealing in a tube furnace (30min) and by rapid thermal annealing (30s) on two separate samples. For annealing temperatures below 700°C, only a minor redistribution of Li is observed behind the projected range of the K+ ions. At temperatures between 700 and 750°C, however, both annealing treatments show a wide region behind the implantation peak which is depleted of Li, and this depletion is used as a tracer to monitor diffusion of intrinsic defects like the Zn interstitial. The results are interpreted as Zn interstitials being released from the implanted region in a burst at temperatures above ∼700°C, followed by rapid migration, replacement of Li on Zn site through the kick-out mechanism, and migration of Li away from the active region.

Modeling of Boron Diffusion and Activation for Nonequilibrium Rapid Thermal Annealing Application

1993 ◽  
Vol 303 ◽  
Author(s):  
H. Kinoshita ◽  
T. H. Huang ◽  
D. L. Kwong
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Dose ◽  
Boron Diffusion ◽  
Defect Model ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Wide Range ◽  
Simulation Results ◽  
Single Set

ABSTRACTThe diffusion and activation of ion implanted boron and BF2 during rapid thermal annealing (RTA) was modeled by considering the reaction kinetics between point defects and boron. The diffusion model uses the Monte Carlo generated point defect profiles, an extended defect model and a surface amorphization model for high dose BF2 implantation. Excellent simulation results have been achieved by using a single set of diffusion and kinetic parameters to model the enhanced diffusion of boron during RTA for a wide range of B and BF2 implant doses.

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

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