Diffusion and Activation During Rapid Thermal Annealing of Implanted Boron in Silicon

1985 ◽  
Vol 52 ◽  
Author(s):  
N E B Cowern ◽  
K J Yallup ◽  
D J Godfrey ◽  
D G Hasko ◽  
R A McMahon ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Crystalline Silicon ◽  
Numerical Models ◽  
Analytical Techniques ◽  
Silicon Substrates ◽  
Extended Defect ◽  
Diffusion Enhancement ◽  
High Doses ◽  
Concentration Dependent Diffusivity

ABSTRACTThe diffusion and activation of implanted boron in silicon during rapid thermal annealing (RTA) has been studied using the analytical techniques of SIMS, TEM, and sheet resistance measurements. Both crystalline and pre-amorphised silicon substrates were investigated. Data analysis in conjunction with a range of numerical models indicates some novel features of boron RTA, as well as accounting for previously observed features. In particular, a large transient diffusion enhancement coupled with an increase of electrical activity, are seen at short anneal times, in the case of crystalline silicon substrates. A non-equilibrium diffusion enhancement of a different type is also seen at much longer times, in both crystalline and pre-amorphised samples implanted to high doses. This second enhancement persists after all the precipitated boron formed on implantation has become substitutional. TEM studies show that the transient enhancement may be associated with the evolution of extended defect structures during the early stages of annealing. Both types of enhancement can be well represented by multiplying the ‘normal’ concentration-dependent diffusivity (with β=0.5) by a factor f>1.

Crystallization of amorphous silicon films by rapid thermal annealing for heterojunction photovoltaic solar cells

2014 ◽  
Vol 92 (7/8) ◽  
pp. 896-901 ◽  
Author(s):  
C. Baldus-Jeursen ◽  
R. Tarighat ◽  
E. Fathi ◽  
S. Sivoththaman
Keyword(s):  
Solar Cells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Solar Simulator ◽  
Heterojunction Solar Cells ◽  
Silicon Thin Films ◽  
Photovoltaic Solar Cells ◽  
Low Thermal Budget

Low thermal budget rapid thermal annealing is a promising method of forming highly crystalline silicon thin films on silicon substrates for heterojunction solar cells. In this work, the extent of crystallization was examined by Raman and ultraviolet reflectance spectroscopy, and ellipsometry was used to derive film optical properties. Solar cells were fabricated and analyzed using dark and illuminated current–voltage characteristics, external quantum efficiency, and solar simulator measurements with device efficiency approaching 14%.

Impact of rapid thermal annealing and hydrogenation on the doping concentration and carrier mobility in solid phase crystallized poly-Si thin films

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. Kumar ◽  
P.I. Widenborg ◽  
H. Hidayat ◽  
Qiu Zixuan ◽  
A.G. Aberle
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Mobility ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Dopant Activation ◽  
Hall Effect Measurements ◽  
Probe Measurements

ABSTRACTThe effect of the rapid thermal annealing (RTA) and hydrogenation step on the electronic properties of the n+ and p+ solid phase crystallized (SPC) poly-crystalline silicon (poly-Si) thin films was investigated using Hall effect measurements and four-point-probe measurements. Both the RTA and hydrogenation step were found to affect the electronic properties of doped poly-Si thin films. The RTA step was found to have the largest impact on the dopant activation and majority carrier mobility of the p+ SPC poly-Si thin films. A very high Hall mobility of 71 cm2/Vs for n+ poly-Si and 35 cm2/Vs for p+ poly-Si at the carrier concentration of 2×1019 cm-3 and 4.5×1019 cm-3, respectively, were obtained.

Rapid Thermal Anneaung of Arsenic-Phosphorus(N+-N-) Double-Diffused Shallow Junctions

1985 ◽  
Vol 52 ◽  
Author(s):  
D. L. Kwong ◽  
N. S. Alvi ◽  
Y. H. Ku ◽  
A. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Experimental Results ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Shallow Junctions

ABSTRACTDouble-diffused shallow junctions have been formed by ion implantation of both phosphorus and arsenic ions into silicon substrates and rapid thermal annealing. Experimental results on defect removal, impurity activation and redistribution, effects of Si preamorphization, and electrical characteristics of Ti-silicided junctions are presented.

scholarly journals Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy

AIP Advances ◽  
2012 ◽  
Vol 2 (3) ◽  
pp. 032150 ◽  
Author(s):  
Min-Hao Hong ◽  
Chun-Wei Chang ◽  
Dung-Ching Perng ◽  
Kuan-Ching Lee ◽  
Shiu-Ko Jang Jian ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Substrates

Extended defect removal in silicon by rapid thermal annealing

1990 ◽  
Vol 12 (12) ◽  
pp. 1593-1601 ◽  
Author(s):  
L. Calcagno ◽  
C. Spinella ◽  
S. Coffa ◽  
E. Rimini
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Extended Defect

Integrated Processinyg of Silicided Shallow Junctions using Rapid Thermal Annealing Prior to Dopant Activation

1989 ◽  
Vol 146 ◽  
Author(s):  
Leonard Rubin ◽  
Nicole Herbots ◽  
JoAnne Gutierrez ◽  
David Hoffman ◽  
Di Ma
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Titanium Silicide ◽  
Silicon Substrates ◽  
Sheet Resistivity ◽  
Furnace Annealing ◽  
Dopant Activation ◽  
Silicide Layer ◽  
Low Leakage ◽  
Sputter Deposited

ABSTRACTA method for producing shallow silicided diodes for MOS devices (with junction depths of about 0.1 µm), by implanting after forming the silicide layer was investigated. The key to this integrated process is the use of rapid thermal annealing (RTA) to activate the dopants in the silicon, so that there is very little thermal broadening of the implant distribution. Self-aligned titanium silicide (TiSi2) films with thicknesses ranging from 40 to 80 nm were grown by RTA of sputter deposited titanium films on silicon substrates. After forming the TiSi2, arsenic and boron were implanted. A second RTA step was used after implantation to activate these dopants. It was found that implanting either dopant caused a sharp increase in the sheet resistivity of the TiSi2. The resistivity can be easily restored to its original value (about 18 µΩ-cm) by a post implant RTA anneal. RBS analysis showed that arsenic diffuses rapidly in the TiSi2 during RTA at temperatures as low as 600°C. SIMS data indicated that boron was not mobile up to temperatures of 900°C, possibly because it forms a compound with the titanium which precipitates in the TiSi 2. Coalescence of TiSi2 occurs during post implant furnace annealing, leading to an increase in the sheet resistivity. The amount of coalescence depends on the film thickness, but not on whether or not the film had been subject to implantation. Spreading resistance profiling data showed that both arsenic and boron diffused into the TiSi2 during furnace annealing, reducing the surface concentrations of dopant at the TiSi2/Si interface. Both N+/P and P+/N diodes formed by this technique exhibited low leakage currents after the second RTA anneal. This is attributed to removal of the implant damage by the RTA. In summary, the second RTA serves the dual purpose of removing implant damage in the TiSi2 and creating the shallow junction by dopant activation.

Effect of Inert Annealing Gases on Morphology of Gold Nanoparticles Produced by Using Rapid Thermal Annealing

2019 ◽  
Vol 57 ◽  
pp. 7-16
Author(s):  
Tung Thanh Bui ◽  
Tien Minh Huynh ◽  
Thuy Thanh Tieu ◽  
Chien Mau Dang
Keyword(s):  
Gold Nanoparticles ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Metallic Nanoparticles ◽  
Strong Influence ◽  
Silicon Substrates ◽  
Optical And Electrical Properties ◽  
Potential Applications ◽  
Spherical Gold Nanoparticles

Metallic nanoparticles have various potential applications. Recent studies have showed that their morphology had a strong influence on their optical and electrical properties. In this work, rapid thermal annealing was used to produce gold nanoparticles on silicon substrates. Morphology control of the gold nanoparticles was made by changing inert annealing gases. Spherical gold nanoparticles were obtained with nitrogen while hemispherical gold nanoparticles were formed with argon.

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