Effect of Fluorine Co-Implant on Boron Diffusion in Germanium Preamorphized Silicon During Post-LSA Rapid Thermal Annealing

2011 ◽  
Vol 24 (2) ◽  
pp. 333-337 ◽  
Author(s):  
Chyiu Hyia Poon ◽  
Alex See
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Boron Diffusion

Measurement and modeling of boron diffusion in Si and strained Si1−xGexepitaxial layers during rapid thermal annealing

1993 ◽  
Vol 74 (9) ◽  
pp. 5520-5526 ◽  
Author(s):  
G. H. Loechelt ◽  
G. Tam ◽  
J. W. Steele ◽  
L. K. Knoch ◽  
K. M. Klein ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Boron Diffusion

Stability of Ultra-Thin Gate Oxides with Boron Doped Polysilicon Gate Structures After Rapid Thermal Annealing

1993 ◽  
Vol 303 ◽  
Author(s):  
Bojun Zhang ◽  
Dennis M. Maher ◽  
Mark S. Denker ◽  
Mark A. Ray
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Depth Profiling ◽  
Gate Oxide ◽  
Annealing Condition ◽  
Dopant Diffusion ◽  
Boron Diffusion ◽  
Gate Oxides ◽  
Diffusion Behavior ◽  
Polysilicon Gate

ABSTRACTWe report a systematic study of dopant diffusion behavior for thin gate oxides and polysilicon implanted gate structures. Boron behavior is emphasized and its behavior is compared to that of As+ and BF2+. Dopant activation is achieved by rapid thermal annealing. Test structures with 100 Å, 60 Å and 30 Å gate oxides and ion implanted polysilicon gate electrodes were fabricated and characterized after annealing by SIMS, SEM, TEM, and C-V rpeasurements. For arsenic implanted structures, no dopant diffusion through a gate oxide of 30 Å thickness and an annealing condition as high as 1 100*C/1Os was observed. For boron implanted structures, as indicated by SIMS depth profiling, structures annealed at 1000*C/10s exhibit a so-called critical condition for boron diffusion through a 30 Å gate oxide. Boron dopant penetration is clearly observed for 60 Å gate oxides at an annealing condition of 1050 0C/10s. The flatband voltage shift can be as high as 0.56 volts as indicated by C-V measurements for boron penetrated gate oxides. However, 100 Å gate oxides are good diffusion barriers for boron at an annealing condition of 1100°C/10s. For BF2 implanted structures, the diffusion behavior is consistent with behavior reported in the literature.

Effect of a mid-temperature thermal annealing on the enhancement of boron diffusion during rapid thermal annealing

2006 ◽  
Vol 99 (7) ◽  
pp. 073506
Author(s):  
P. Lévêque ◽  
D. Mathiot ◽  
J. S. Christensen ◽  
B. G. Svensson ◽  
A. Nylandsted Larsen
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Boron Diffusion

A novel doping technology for ultra-shallow junction fabrication: boron diffusion from boron-adsorbed layer by rapid thermal annealing

2000 ◽  
Vol 369 (1-2) ◽  
pp. 207-212 ◽  
Author(s):  
Ki-Seon Kim ◽  
Yun-Heub Song ◽  
Ki-Tae Park ◽  
Hiroyuki Kurino ◽  
Takashi Matsuura ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Adsorbed Layer ◽  
Boron Diffusion ◽  
Shallow Junction

Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials—some comments

2006 ◽  
Vol 41 (3) ◽  
pp. 1013-1016
Author(s):  
M. S. A. Karunaratne ◽  
J. M. Bonar ◽  
P. Ashburn ◽  
A. F. W. Willoughby
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Boron Diffusion

Simulation of transient boron diffusion during rapid thermal annealing in silicon

1991 ◽  
Vol 69 (12) ◽  
pp. 8133-8138 ◽  
Author(s):  
Michael Heinrich ◽  
Matthias Budil ◽  
Hans W. Pötzl
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Boron Diffusion

Boron Diffusion in Fluorine Preamorphized Silicon During Rapid Thermal Annealing

1993 ◽  
Vol 303 ◽  
Author(s):  
H. Kinoshita ◽  
T. H. Huang ◽  
D. L. Kwong ◽  
P. E. Bakeman
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealed Sample ◽  
Transmission Electron Micrograph ◽  
Boron Diffusion ◽  
Cross Sectional ◽  
Dopant Activation ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Secondary Ion

ABSTRACTThe effect of fluorine preamorphization on boron diffusion and activation during rapid thermal annealing (RTA) has been investigated. Compared with low energy B or BF2 implant into crystalline Si, F preamorphization suppressed the transient enhanced diffusion of B and increased dopant activation. Results show that the tail diffusion was absent, and thus the junction depth of the RTA annealed sample was established by the as-implanted B profile. Secondary ion mass spectroscopy and cross-sectional transmission electron micrograph results show F accumulation near the surface and at end-of-range defects. The interaction of F with defects is believed to reduce the B diffusion during RTA.

scholarly journals Controlling boron diffusion during rapid thermal annealing with co-implantation by amphoteric impurity atoms

2012 ◽  
Vol 76 (5) ◽  
pp. 574-576
Author(s):  
Yu. V. Makarevich ◽  
F. F. Komarov ◽  
A. F. Komarov ◽  
A. M. Mironov ◽  
G. M. Zayats ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Boron Diffusion ◽  
Impurity Atoms
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