Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy

1989 ◽  
Vol 55 (22) ◽  
pp. 2283-2285 ◽  
Author(s):  
T. Tanbun‐Ek ◽  
R. A. Logan ◽  
H. Temkin ◽  
K. Berthold ◽  
A. F. J. Levi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Graded Index ◽  
Low Threshold

Low threshold 1.5 μm quantum well lasers with continuous linear‐graded‐index InGaAsP layers prepared by organometallic vapor‐phase epitaxy

1993 ◽  
Vol 62 (11) ◽  
pp. 1239-1241 ◽  
Author(s):  
Wei Lin ◽  
Chwan‐Yang Chang ◽  
Yuan‐Kuang Tu ◽  
Ting‐Arn Dai ◽  
Wen‐Jeng Ho ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Continuous Linear ◽  
Graded Index ◽  
Low Threshold

Low‐threshold GaAs/AlGaAs quantum‐well lasers grown by organometallic vapor‐phase epitaxy using trimethylamine alane

1991 ◽  
Vol 70 (1) ◽  
pp. 432-435 ◽  
Author(s):  
W. S. Hobson ◽  
J. P. van der Ziel ◽  
A. F. J. Levi ◽  
J. O’Gorman ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Low Threshold ◽  
Trimethylamine Alane

Strained multiple quantum well lasers emitting at 1.3 μm grown by low‐pressure metalorganic vapor phase epitaxy

1991 ◽  
Vol 59 (4) ◽  
pp. 405-407 ◽  
Author(s):  
D. Coblentz ◽  
T. Tanbun‐Ek ◽  
R. A. Logan ◽  
A. M. Sergent ◽  
S. N. G. Chu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Multiple Quantum Well ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Multiple Quantum
Sign in / Sign up

Export Citation Format

Share Document