Strained multiple quantum well lasers emitting at 1.3 μm grown by low‐pressure metalorganic vapor phase epitaxy

D. Coblentz; T. Tanbun‐Ek; R. A. Logan; A. M. Sergent; S. N. G. Chu; P. S. Davisson

doi:10.1063/1.105445

Strained multiple quantum well lasers emitting at 1.3 μm grown by low‐pressure metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.105445 ◽

1991 ◽

Vol 59 (4) ◽

pp. 405-407 ◽

Cited By ~ 34

Author(s):

D. Coblentz ◽

T. Tanbun‐Ek ◽

R. A. Logan ◽

A. M. Sergent ◽

S. N. G. Chu ◽

...

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Low Pressure ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Lasers ◽

Multiple Quantum

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2.1-µm Wavelength Strained InGaAs Multiple-Quantum-Well Lasers Grown by Metalorganic Vapor Phase Epitaxy assisted by Sb Surfactant

2005 Pacific Rim Conference on Lasers & Electro-Optics ◽

10.1109/cleopr.2005.1569530 ◽

2006 ◽

Author(s):

T. Sato ◽

M. Mitsuhara ◽

T. Watanabe ◽

K. Kasaya ◽

Y. Kondo

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Lasers ◽

Multiple Quantum

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Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1μm by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.2133920 ◽

2005 ◽

Vol 87 (21) ◽

pp. 211903 ◽

Cited By ~ 30

Author(s):

Tomonari Sato ◽

Manabu Mitsuhara ◽

Takao Watanabe ◽

Yasuhiro Kondo

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Lasers ◽

Multiple Quantum

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High‐power 1.48 μm multiple quantum well lasers with strained quaternary wells entirely grown by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.104932 ◽

1991 ◽

Vol 58 (20) ◽

pp. 2220-2222 ◽

Cited By ~ 16

Author(s):

M. Joma ◽

H. Horikawa ◽

Y. Matsui ◽

T. Kamijoh

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

High Power ◽

Multiple Quantum Well ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Lasers ◽

Multiple Quantum

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Comparison of blue and green InGaN∕GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.1866634 ◽

2005 ◽

Vol 86 (10) ◽

pp. 101903 ◽

Cited By ~ 63

Author(s):

Y. D. Qi ◽

H. Liang ◽

D. Wang ◽

Z. D. Lu ◽

W. Tang ◽

...

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Light Emitting Diodes ◽

Multiple Quantum Well ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Light Emitting

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Reliable 1.5-μm buried heterostructure separate confinement multiple quantum well lasers entirely grown by metal-organic vapor phase epitaxy

10.1364/ofc.1990.wm14 ◽

1990 ◽

Author(s):

D. M. COOPER ◽

M. STEVENSON ◽

R. M. REDSTALL ◽

N. FLETCHER ◽

L. D. WESTBROOK ◽

...

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Vapor Phase Epitaxy ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Organic Vapor ◽

Metal Organic ◽

Buried Heterostructure

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Multiple quantum well structures and high-power lasers of gaas- algaas grown by metalorganic vapor phase epitaxy (MOVPE)1

Fiber & Integrated Optics ◽

10.1080/01468038708222973 ◽

1987 ◽

Vol 6 (4) ◽

pp. 331-345 ◽

Cited By ~ 1

Author(s):

Fred Roozeboom ◽

André Sikkema ◽

Laurens W. Molenkamp

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

High Power ◽

Multiple Quantum Well ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

High Power Lasers ◽

Quantum Well Structures

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Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of AlInAsSb and AlInAsSb/InGaAs multiple-quantum-well structures

Journal of Crystal Growth ◽

10.1016/s0022-0248(99)00114-1 ◽

1999 ◽

Vol 203 (4) ◽

pp. 481-485 ◽

Cited By ~ 9

Author(s):

J.R Chang ◽

Y.K Su ◽

D.H Jaw ◽

H.P Shiao ◽

W Lin

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Movpe Growth

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InGaAsP multiple quantum well edge-emitting light-emitting diode showing low coherence characteristics using selective-area metalorganic vapor phase epitaxy

Optical Review ◽

10.1007/bf02935995 ◽

1997 ◽

Vol 4 (1) ◽

pp. A69-A71 ◽

Cited By ~ 2

Author(s):

Yasumasa Kashima ◽

Tsutomu Munakata ◽

Akio Matoba

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Light Emitting Diode ◽

Multiple Quantum Well ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Light Emitting ◽

Low Coherence ◽

Selective Area

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Metalorganic vapor-phase epitaxy (MOVPE) growth of InGaAsP multiple-quantum-well distributed feedback lasers on InP corrugated substrate

Journal of Crystal Growth ◽

10.1016/s0022-0248(99)00221-3 ◽

1999 ◽

Vol 204 (4) ◽

pp. 429-433 ◽

Cited By ~ 6

Author(s):

Y Kashima ◽

T Nozawa ◽

T Munakata

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Multiple Quantum Well ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Distributed Feedback ◽

Distributed Feedback Lasers ◽

Multiple Quantum ◽

Movpe Growth

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Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.124733 ◽

1999 ◽

Vol 75 (11) ◽

pp. 1494-1496 ◽

Cited By ~ 139

Author(s):

Chuong A. Tran ◽

A. Osinski ◽

R. F. Karlicek ◽

I. Berishev

Keyword(s):

Quantum Well ◽

Blue Light ◽

Vapor Phase ◽

Light Emitting Diodes ◽

Multiple Quantum Well ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Light Emitting

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