Growth and characterization of continuously graded index separate confinement heterostructure (GRIN-SCH) InGaAs-InP long wavelength strained layer quantum-well lasers by metalorganic vapor phase epitaxy

1990 ◽  
Vol 26 (8) ◽  
pp. 1323-1327 ◽  
Author(s):  
T. Tanbun-Ek ◽  
R.A. Logan ◽  
H. Temkin ◽  
S.N.G. Chu ◽  
N.A. Olsson ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Long Wavelength ◽  
Graded Index

Low threshold 1.5 μm quantum well lasers with continuous linear‐graded‐index InGaAsP layers prepared by organometallic vapor‐phase epitaxy

1993 ◽  
Vol 62 (11) ◽  
pp. 1239-1241 ◽  
Author(s):  
Wei Lin ◽  
Chwan‐Yang Chang ◽  
Yuan‐Kuang Tu ◽  
Ting‐Arn Dai ◽  
Wen‐Jeng Ho ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Continuous Linear ◽  
Graded Index ◽  
Low Threshold

Strained multiple quantum well lasers emitting at 1.3 μm grown by low‐pressure metalorganic vapor phase epitaxy

1991 ◽  
Vol 59 (4) ◽  
pp. 405-407 ◽  
Author(s):  
D. Coblentz ◽  
T. Tanbun‐Ek ◽  
R. A. Logan ◽  
A. M. Sergent ◽  
S. N. G. Chu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Multiple Quantum Well ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Multiple Quantum
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