Low threshold 1.5 μm quantum well lasers with continuous linear‐graded‐index InGaAsP layers prepared by organometallic vapor‐phase epitaxy

1993 ◽  
Vol 62 (11) ◽  
pp. 1239-1241 ◽  
Author(s):  
Wei Lin ◽  
Chwan‐Yang Chang ◽  
Yuan‐Kuang Tu ◽  
Ting‐Arn Dai ◽  
Wen‐Jeng Ho ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Continuous Linear ◽  
Graded Index ◽  
Low Threshold

Low‐threshold GaAs/AlGaAs quantum‐well lasers grown by organometallic vapor‐phase epitaxy using trimethylamine alane

1991 ◽  
Vol 70 (1) ◽  
pp. 432-435 ◽  
Author(s):  
W. S. Hobson ◽  
J. P. van der Ziel ◽  
A. F. J. Levi ◽  
J. O’Gorman ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Low Threshold ◽  
Trimethylamine Alane

GaInAsP/InP ORGANOMETALLIC VAPOR PHASE EPITAXY FOR RESEARCH AND FABRICATION OF DEVICES

1990 ◽  
Vol 01 (03n04) ◽  
pp. 347-367 ◽  
Author(s):  
KAZUHITO FURUYA ◽  
YASUYUKI MIYAMOTO
Keyword(s):  
Quantum Well ◽  
Single Crystal ◽  
Vapor Phase ◽  
Optical Communication ◽  
Ballistic Transport ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Technique

GaInAsP/InP organometallic vapor phase epitaxy (OMVPE) is widely used for the fabrication of lasers and detectors used in optical communication. Here we describe the apparatus and growth technique of OMVPE and point out important growth conditions to obtain device quality single-crystal materials. Our research includes the use of OMVPE for the study of quantum-well lasers, ballistic-transport electron devices and nanometer heterostructures.

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