Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strained‐layer superlattices

1989 ◽  
Vol 54 (25) ◽  
pp. 2568-2570 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Mitsuru Sugo ◽  
Yoshio Itoh
Keyword(s):  
Dislocation Density ◽  
Stress Dependence ◽  
Misfit Stress ◽  
Strained Layer ◽  
Si Substrates ◽  
Density Reduction ◽  
Gaas Films ◽  
Strained Layer Superlattices

Analysis for dislocation density reduction in selective area grown GaAs films on Si substrates

1990 ◽  
Vol 56 (1) ◽  
pp. 27-29 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Masami Tachikawa ◽  
Mitsuru Sugo ◽  
Susumu Kondo ◽  
Yoshio Itoh
Keyword(s):  
Dislocation Density ◽  
Si Substrates ◽  
Density Reduction ◽  
Selective Area ◽  
Gaas Films

Dislocation Density Reduction in GaAs Epilayers on Si Using Strained Layer Superlattices

1989 ◽  
Vol 160 ◽  
Author(s):  
S. Sharan ◽  
J. Narayan ◽  
J. C. C. Fan
Keyword(s):  
Dislocation Density ◽  
Defect Density ◽  
Full Potential ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Strained Layer ◽  
Density Reduction ◽  
Threading Dislocation Density ◽  
Superlattice Structures ◽  
Strained Layer Superlattices

AbstractDefects such as dislocations and interfaces play a crucial role in the performance of heterostracture devices. The full potential of GaAs on Si heterostructures can only be realized by controlling the defect density. The reduction of threading dislocations by the use of strained layer superlattices has been studied in these heterostructures. Several superlattice structures have been used to reduce the density of threading dislocations in the GaAs epilayer. The use of strained layer superlattices in conjunction with rapid thermal annealing was most effective in reducing threading dislocation density. Transmission electron microscopy has been used to study the dislocation density reduction and the interaction of threading dislocations with the strained layers. A model has been developed based on energy considerations to determine the critical thickness required for the bending of threading dislocations.

Heteroepitaxy of III-V Compounds on Si Substrates for Solar Cells and Led

1989 ◽  
Vol 145 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Susumu Kondo
Keyword(s):  
Solar Cells ◽  
Dislocation Density ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Heteroepitaxial Growth ◽  
Misfit Stress ◽  
Si Substrates ◽  
Density Reduction ◽  
Dislocation Annihilation

AbstractHeteroepitaxial growth of GaAs, InP, GaP and InGaP on Si substrates is studied using MOCVD (Metal-Organic Chemical Vapor Deposition). High qgaliti GaAs films on Si, with a dislocation density of about 106 cm−2, are obtained by combining strained- layer superlattice insertion and thermal cycle annealing. Reduction of dislocation density in the III-V compounds on Si is discussed based on a simple model, where dislocation annihilation is assumed to be caused by dislocation movement under thermal and misfit stress. As a result of dislocation density reduction, high-efficiency GaAs-on-Si solar cells with total-area efficiencies of 18.3% (AMO) and 20% (AM1.5), and red and yellow emissions from InGaP-on-Si light-emitting diodes (LEDs) have been realized.

Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices

1991 ◽  
Vol 6 (2) ◽  
pp. 376-384 ◽  
Author(s):  
Masafumi Yamaguchi
Keyword(s):  
Dislocation Density ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Misfit Stress ◽  
Si Substrates ◽  
Density Reduction ◽  
Strained Layer Superlattice ◽  
Dislocation Movement ◽  
Dislocation Annihilation

The reduction of dislocation density in heteroepitaxial III-V compound films on Si substrates has been studied using MOCVD (Metal-Organic Chemical Vapor Deposition). High-quality GaAs films on Si, with a dislocation density of about 106 cm−2, have been obtained by combining strained-layer superlattice insertion and thermal cycle annealing. Reduction of dislocation density in the III-V compounds on Si is discussed based on a simple model, where dislocation annihilation is assumed to be caused by dislocation movement under thermal and misfit stress. As a result of dislocation density reduction, high-efficiency GaAs-on-Si solar cells with total-area efficiencies of 18.3% (AM0) and 20% (AM1.5), and red and yellow emissions from InGaP-on-Si light-emitting diodes have been realized. Moreover, future prospects of heteroepitaxy of III-V compounds on Si are also discussed.

Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices

1987 ◽  
Vol 91 ◽  
Author(s):  
N. El-Masry ◽  
N. Hamaguchi ◽  
J.C.L. Tarn ◽  
N. Karam ◽  
T.P. Humphreys ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Defect Reduction ◽  
Strained Layer ◽  
Si Substrates ◽  
Density Of Dislocations ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTInxGa11-xAs-GaAsl-yPy strained layer superlattice buffer layers have been used to reduce threading dislocations in GaAs grown on Si substrates. However, for an initially high density of dislocations, the strained layer superlattice is not an effective filtering system. Consequently, the emergence of dislocations from the SLS propagate upwards into the GaAs epilayer. However, by employing thermal annealing or rapid thermal annealing, the number of dislocation impinging on the SLS can be significantly reduced. Indeed, this treatment greatly enhances the efficiency and usefulness of the SLS in reducing the number of threading dislocations.

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