Analysis for dislocation density reduction in selective area grown GaAs films on Si substrates

1990 ◽  
Vol 56 (1) ◽  
pp. 27-29 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Masami Tachikawa ◽  
Mitsuru Sugo ◽  
Susumu Kondo ◽  
Yoshio Itoh
Keyword(s):  
Dislocation Density ◽  
Si Substrates ◽  
Density Reduction ◽  
Selective Area ◽  
Gaas Films

Heteroepitaxy of III-V Compounds on Si Substrates for Solar Cells and Led

1989 ◽  
Vol 145 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Susumu Kondo
Keyword(s):  
Solar Cells ◽  
Dislocation Density ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Heteroepitaxial Growth ◽  
Misfit Stress ◽  
Si Substrates ◽  
Density Reduction ◽  
Dislocation Annihilation

AbstractHeteroepitaxial growth of GaAs, InP, GaP and InGaP on Si substrates is studied using MOCVD (Metal-Organic Chemical Vapor Deposition). High qgaliti GaAs films on Si, with a dislocation density of about 106 cm−2, are obtained by combining strained- layer superlattice insertion and thermal cycle annealing. Reduction of dislocation density in the III-V compounds on Si is discussed based on a simple model, where dislocation annihilation is assumed to be caused by dislocation movement under thermal and misfit stress. As a result of dislocation density reduction, high-efficiency GaAs-on-Si solar cells with total-area efficiencies of 18.3% (AMO) and 20% (AM1.5), and red and yellow emissions from InGaP-on-Si light-emitting diodes (LEDs) have been realized.

Threading Dislocation Density Reduction in GaAs on Si Substrates

1988 ◽  
Vol 27 (Part 2, No. 12) ◽  
pp. L2271-L2273 ◽  
Author(s):  
Takashi Nishioka ◽  
Yoshio Itoh ◽  
Mitsuru Sugo ◽  
Akio Yamamoto ◽  
Masfumi Yamaguchi
Keyword(s):  
Dislocation Density ◽  
Threading Dislocation ◽  
Si Substrates ◽  
Gaas On Si ◽  
Density Reduction ◽  
Threading Dislocation Density

Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices

1991 ◽  
Vol 6 (2) ◽  
pp. 376-384 ◽  
Author(s):  
Masafumi Yamaguchi
Keyword(s):  
Dislocation Density ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Misfit Stress ◽  
Si Substrates ◽  
Density Reduction ◽  
Strained Layer Superlattice ◽  
Dislocation Movement ◽  
Dislocation Annihilation

The reduction of dislocation density in heteroepitaxial III-V compound films on Si substrates has been studied using MOCVD (Metal-Organic Chemical Vapor Deposition). High-quality GaAs films on Si, with a dislocation density of about 106 cm−2, have been obtained by combining strained-layer superlattice insertion and thermal cycle annealing. Reduction of dislocation density in the III-V compounds on Si is discussed based on a simple model, where dislocation annihilation is assumed to be caused by dislocation movement under thermal and misfit stress. As a result of dislocation density reduction, high-efficiency GaAs-on-Si solar cells with total-area efficiencies of 18.3% (AM0) and 20% (AM1.5), and red and yellow emissions from InGaP-on-Si light-emitting diodes have been realized. Moreover, future prospects of heteroepitaxy of III-V compounds on Si are also discussed.

Reduction Mechanism of Dislocation Density in GaAs Films on Si Substrates

1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 632-636 ◽  
Author(s):  
Hirofumi Shimomura ◽  
Yoshitaka Okada ◽  
Hisashi Matsumoto ◽  
Mitsuo Kawabe ◽  
Yoshizo Kitami ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Reduction Mechanism ◽  
Si Substrates ◽  
Gaas Films

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

Selective area growth of GaN microstructures on patterned (111) and (001) Si substrates

2001 ◽  
Vol 230 (3-4) ◽  
pp. 346-350 ◽  
Author(s):  
Y. Honda ◽  
Y. Kawaguchi ◽  
Y. Ohtake ◽  
S. Tanaka ◽  
M. Yamaguchi ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
Si Substrates ◽  
Selective Area ◽  
Area Growth
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