Film thickness dependence of dislocation density reduction in GaAs‐on‐Si substrates

1990 ◽  
Vol 56 (5) ◽  
pp. 484-486 ◽  
Author(s):  
Masami Tachikawa ◽  
Masafumi Yamaguchi
Keyword(s):  
Dislocation Density ◽  
Film Thickness ◽  
Thickness Dependence ◽  
Si Substrates ◽  
Gaas On Si ◽  
Density Reduction

Threading Dislocation Density Reduction in GaAs on Si Substrates

1988 ◽  
Vol 27 (Part 2, No. 12) ◽  
pp. L2271-L2273 ◽  
Author(s):  
Takashi Nishioka ◽  
Yoshio Itoh ◽  
Mitsuru Sugo ◽  
Akio Yamamoto ◽  
Masfumi Yamaguchi
Keyword(s):  
Dislocation Density ◽  
Threading Dislocation ◽  
Si Substrates ◽  
Gaas On Si ◽  
Density Reduction ◽  
Threading Dislocation Density

Threading Dislocation Densities in Mismatched Heteroepitaxial (001) Semiconductors

1990 ◽  
Vol 209 ◽  
Author(s):  
J. E. Ayers ◽  
S.K. Ghandhi ◽  
L. J. Schowalter
Keyword(s):  
Dislocation Density ◽  
Film Thickness ◽  
Thickness Dependence ◽  
Threading Dislocation ◽  
Gaas On Si ◽  
Dislocation Densities ◽  
Threading Dislocation Density ◽  
Heteroepitaxial Layers ◽  
Equilibrium Strain ◽  
Good Agreement

ABSTRACTIn this paper we propose a theory which accounts for the thickness dependence of threading dislocation densities in mismatched heteroepitaxial (001) semiconductors. This theory predicts that, for thick, planar, highly-mismatched heteroepitaxial layers with equilibrium strain, the threading dislocation density should be proportional to f/h, where f is thelattice mismatch and h is the film thickness. These predictions are in good agreement with experimental resultsin the GaAs on Si(001) system.

Dislocation-density studies in MOCVD GaAs on Si substrates

1988 ◽  
Vol 93 (1-4) ◽  
pp. 475-480 ◽  
Author(s):  
M. Shimizu ◽  
M. Enatsu ◽  
M. Furukawa ◽  
T. Mizuki ◽  
T. Sakurai
Keyword(s):  
Dislocation Density ◽  
Si Substrates ◽  
Gaas On Si

Analysis for dislocation density reduction in selective area grown GaAs films on Si substrates

1990 ◽  
Vol 56 (1) ◽  
pp. 27-29 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Masami Tachikawa ◽  
Mitsuru Sugo ◽  
Susumu Kondo ◽  
Yoshio Itoh
Keyword(s):  
Dislocation Density ◽  
Si Substrates ◽  
Density Reduction ◽  
Selective Area ◽  
Gaas Films

Heteroepitaxy of III-V Compounds on Si Substrates for Solar Cells and Led

1989 ◽  
Vol 145 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Susumu Kondo
Keyword(s):  
Solar Cells ◽  
Dislocation Density ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Heteroepitaxial Growth ◽  
Misfit Stress ◽  
Si Substrates ◽  
Density Reduction ◽  
Dislocation Annihilation

AbstractHeteroepitaxial growth of GaAs, InP, GaP and InGaP on Si substrates is studied using MOCVD (Metal-Organic Chemical Vapor Deposition). High qgaliti GaAs films on Si, with a dislocation density of about 106 cm−2, are obtained by combining strained- layer superlattice insertion and thermal cycle annealing. Reduction of dislocation density in the III-V compounds on Si is discussed based on a simple model, where dislocation annihilation is assumed to be caused by dislocation movement under thermal and misfit stress. As a result of dislocation density reduction, high-efficiency GaAs-on-Si solar cells with total-area efficiencies of 18.3% (AMO) and 20% (AM1.5), and red and yellow emissions from InGaP-on-Si light-emitting diodes (LEDs) have been realized.

Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices

1991 ◽  
Vol 6 (2) ◽  
pp. 376-384 ◽  
Author(s):  
Masafumi Yamaguchi
Keyword(s):  
Dislocation Density ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Misfit Stress ◽  
Si Substrates ◽  
Density Reduction ◽  
Strained Layer Superlattice ◽  
Dislocation Movement ◽  
Dislocation Annihilation

The reduction of dislocation density in heteroepitaxial III-V compound films on Si substrates has been studied using MOCVD (Metal-Organic Chemical Vapor Deposition). High-quality GaAs films on Si, with a dislocation density of about 106 cm−2, have been obtained by combining strained-layer superlattice insertion and thermal cycle annealing. Reduction of dislocation density in the III-V compounds on Si is discussed based on a simple model, where dislocation annihilation is assumed to be caused by dislocation movement under thermal and misfit stress. As a result of dislocation density reduction, high-efficiency GaAs-on-Si solar cells with total-area efficiencies of 18.3% (AM0) and 20% (AM1.5), and red and yellow emissions from InGaP-on-Si light-emitting diodes have been realized. Moreover, future prospects of heteroepitaxy of III-V compounds on Si are also discussed.

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