Analysis of strained‐layer superlattice effects on dislocation density reduction in GaAs on Si substrates

1989 ◽  
Vol 54 (1) ◽  
pp. 24-26 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Takashi Nishioka ◽  
Mitsuru Sugo
Keyword(s):  
Dislocation Density ◽  
Strained Layer ◽  
Si Substrates ◽  
Gaas On Si ◽  
Density Reduction ◽  
Strained Layer Superlattice

High Quality GaAs on Si and its Application to a Solar Cell

1988 ◽  
Vol 144 ◽  
Author(s):  
Yoshiro Ohmachi ◽  
Yoshiaki Kadota ◽  
Yoshio Watanabe ◽  
Hiroshi Okamoto
Keyword(s):  
Solar Cell ◽  
Critical Thickness ◽  
High Quality ◽  
Strained Layer ◽  
Cyclic Annealing ◽  
Si Substrates ◽  
Gaas On Si ◽  
Strained Layer Superlattice ◽  
Buffer Structure

ABSTRACTEpitaxial growth using thermal annealing and a strained layer superlattice is studied to obtain high-quality GaAs device layers on Si substrates. Crystalline quality of GaAs-on-Si is found to improve with thermal cyclic annealing at temperatures higher than the growth temperature and cooling down to 300°C. It is also found that the optimum InGaAs/GaAs strained layer superlattice buffer structure is one whose total thickness is several times the calculated critical thickness for the average In-mole fraction of the SLS buffer. Configurations and structures of dislocation reductions are ex-amined by TEM observations. A GaAs solar cell is successfully constructed and is found to show total area efficiencies of 18.3% under AM 0 and 20.0% under AM 1.5 conditions.

Threading Dislocation Density Reduction in GaAs on Si Substrates

1988 ◽  
Vol 27 (Part 2, No. 12) ◽  
pp. L2271-L2273 ◽  
Author(s):  
Takashi Nishioka ◽  
Yoshio Itoh ◽  
Mitsuru Sugo ◽  
Akio Yamamoto ◽  
Masfumi Yamaguchi
Keyword(s):  
Dislocation Density ◽  
Threading Dislocation ◽  
Si Substrates ◽  
Gaas On Si ◽  
Density Reduction ◽  
Threading Dislocation Density

Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices

1991 ◽  
Vol 6 (2) ◽  
pp. 376-384 ◽  
Author(s):  
Masafumi Yamaguchi
Keyword(s):  
Dislocation Density ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Misfit Stress ◽  
Si Substrates ◽  
Density Reduction ◽  
Strained Layer Superlattice ◽  
Dislocation Movement ◽  
Dislocation Annihilation

The reduction of dislocation density in heteroepitaxial III-V compound films on Si substrates has been studied using MOCVD (Metal-Organic Chemical Vapor Deposition). High-quality GaAs films on Si, with a dislocation density of about 106 cm−2, have been obtained by combining strained-layer superlattice insertion and thermal cycle annealing. Reduction of dislocation density in the III-V compounds on Si is discussed based on a simple model, where dislocation annihilation is assumed to be caused by dislocation movement under thermal and misfit stress. As a result of dislocation density reduction, high-efficiency GaAs-on-Si solar cells with total-area efficiencies of 18.3% (AM0) and 20% (AM1.5), and red and yellow emissions from InGaP-on-Si light-emitting diodes have been realized. Moreover, future prospects of heteroepitaxy of III-V compounds on Si are also discussed.

Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices

1987 ◽  
Vol 91 ◽  
Author(s):  
N. El-Masry ◽  
N. Hamaguchi ◽  
J.C.L. Tarn ◽  
N. Karam ◽  
T.P. Humphreys ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Defect Reduction ◽  
Strained Layer ◽  
Si Substrates ◽  
Density Of Dislocations ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTInxGa11-xAs-GaAsl-yPy strained layer superlattice buffer layers have been used to reduce threading dislocations in GaAs grown on Si substrates. However, for an initially high density of dislocations, the strained layer superlattice is not an effective filtering system. Consequently, the emergence of dislocations from the SLS propagate upwards into the GaAs epilayer. However, by employing thermal annealing or rapid thermal annealing, the number of dislocation impinging on the SLS can be significantly reduced. Indeed, this treatment greatly enhances the efficiency and usefulness of the SLS in reducing the number of threading dislocations.

Structural properties of GaAs-on-Si with InGaAs/GaAs strained-layer superlattice

1988 ◽  
Vol 93 (1-4) ◽  
pp. 459-465 ◽  
Author(s):  
Yoshio Watanabe ◽  
Yoshiaki Kadota ◽  
Hiroshi Okamoto ◽  
Masahiro Seki ◽  
Yoshiro Ohmachi
Keyword(s):  
Structural Properties ◽  
Strained Layer ◽  
Gaas On Si ◽  
Strained Layer Superlattice
Sign in / Sign up

Export Citation Format

Share Document