Heteroepitaxy of III-V Compounds on Si Substrates for Solar Cells and Led

1989 ◽  
Vol 145 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Susumu Kondo
Keyword(s):  
Solar Cells ◽  
Dislocation Density ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Heteroepitaxial Growth ◽  
Misfit Stress ◽  
Si Substrates ◽  
Density Reduction ◽  
Dislocation Annihilation

AbstractHeteroepitaxial growth of GaAs, InP, GaP and InGaP on Si substrates is studied using MOCVD (Metal-Organic Chemical Vapor Deposition). High qgaliti GaAs films on Si, with a dislocation density of about 106 cm−2, are obtained by combining strained- layer superlattice insertion and thermal cycle annealing. Reduction of dislocation density in the III-V compounds on Si is discussed based on a simple model, where dislocation annihilation is assumed to be caused by dislocation movement under thermal and misfit stress. As a result of dislocation density reduction, high-efficiency GaAs-on-Si solar cells with total-area efficiencies of 18.3% (AMO) and 20% (AM1.5), and red and yellow emissions from InGaP-on-Si light-emitting diodes (LEDs) have been realized.

Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices

1991 ◽  
Vol 6 (2) ◽  
pp. 376-384 ◽  
Author(s):  
Masafumi Yamaguchi
Keyword(s):  
Dislocation Density ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Misfit Stress ◽  
Si Substrates ◽  
Density Reduction ◽  
Strained Layer Superlattice ◽  
Dislocation Movement ◽  
Dislocation Annihilation

The reduction of dislocation density in heteroepitaxial III-V compound films on Si substrates has been studied using MOCVD (Metal-Organic Chemical Vapor Deposition). High-quality GaAs films on Si, with a dislocation density of about 106 cm−2, have been obtained by combining strained-layer superlattice insertion and thermal cycle annealing. Reduction of dislocation density in the III-V compounds on Si is discussed based on a simple model, where dislocation annihilation is assumed to be caused by dislocation movement under thermal and misfit stress. As a result of dislocation density reduction, high-efficiency GaAs-on-Si solar cells with total-area efficiencies of 18.3% (AM0) and 20% (AM1.5), and red and yellow emissions from InGaP-on-Si light-emitting diodes have been realized. Moreover, future prospects of heteroepitaxy of III-V compounds on Si are also discussed.

High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates

2018 ◽  
Vol 6 (7) ◽  
pp. 1642-1650 ◽  
Author(s):  
Wenliang Wang ◽  
Yunhao Lin ◽  
Yuan Li ◽  
Xiaochan Li ◽  
Liegen Huang ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting Diode ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical ◽  
Light Emitting ◽  
Si Substrates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

High-quality GaN-based light-emitting diode (LED) wafers have been grown on Si substrates by metal–organic chemical vapor deposition by designing epitaxial structures with AlN/Al0.24Ga0.76N buffer layers and a three-dimensional (3D) GaN layer.

InGaAs Solar Cells Grown on Wafer-Bonded InP/Si Epitaxial Templates

2007 ◽  
Vol 1012 ◽  
Author(s):  
James M. Zahler ◽  
Katsuaki Tanabe ◽  
Corinne Ladous ◽  
Tom Pinnington ◽  
Frederick D. Newman ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrates ◽  
Current Voltage ◽  
Metal Organic ◽  
Engineered Substrates ◽  
The Cost ◽  
Inp Substrates ◽  
Organic Chemical Vapor Deposition

AbstractInP/Si engineered substrates formed by wafer bonding and layer transfer have the potential to significantly reduce the cost and weight of III-V compound semiconductor solar cells. InP/Si substrates were prepared by He implantation of InP prior to bonding to a thermally oxidized Si substrate and annealing to exfoliate an InP thin film. Following thinning to remove damage caused by the implantation and exfoliation from the surface of the InP transferred film, InGaAs solar cells lattice-matched to bulk InP were grown on those substrates using metal-organic chemical vapor deposition. The photovoltaic current-voltage characteristics of the InGaAs cells fabricated on the wafer-bonded InP/Si substrates were comparable to those synthesized on commercially available epi-ready InP substrates, thus providing an initial demonstration of wafer-bonded InP/Si substrates as an alternative to bulk InP substrates for solar cell applications.

Defect Reduction in GaAs Grown on Si by Using Saw-Tooth-Patterned Substrates

1992 ◽  
Vol 281 ◽  
Author(s):  
Jane G. Zhu ◽  
M. M. Al-Jassim ◽  
N. H. Karam ◽  
K. M. Jones
Keyword(s):  
Dislocation Density ◽  
Chemical Vapor ◽  
Growth Front ◽  
Organic Chemical ◽  
Threading Dislocation ◽  
Defect Reduction ◽  
Dislocation Configuration ◽  
Si Substrates ◽  
Transmission Electron ◽  
Threading Dislocation Density

ABSTRACTEpitaxial GaAs layers have been grown on saw-tooth-patterned (STP) Si substrates by metal-organic chemical vapor deposition and analyzed by transmission electron microscopy. The utilization of this special interface feature is effective in suppressing the formation of antiphase boundaries and reducing the threading dislocation density. The growth of GaAs has been studied with the epilayer thicknesses ranging from several hundred angstroms to several microns. Very flat growth front on (100) plane above the STP region is observed. The dislocation density decreases very rapidly in the area farther away from the interface. The dislocation configuration at this STP interface is very different from that at the extensively studied two-dimensional planar interface.

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

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