Influence of the As:Ga flux ratio on growth rate, interface quality, and impurity incorporation in AlGaAs/GaAs quantum wells grown by molecular beam epitaxy

1989 ◽  
Vol 54 (7) ◽  
pp. 623-625 ◽  
Author(s):  
R. Köhrbrück ◽  
S. Munnix ◽  
D. Bimberg ◽  
E. C. Larkins ◽  
J. S. Harris
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Impurity Incorporation ◽  
Interface Quality

Influence of growth interruption on inverted interface quality in single AlAs‐GaAs quantum wells grown by molecular beam epitaxy

1990 ◽  
Vol 68 (11) ◽  
pp. 5595-5600 ◽  
Author(s):  
J. Zhang ◽  
P. Dawson ◽  
J. H. Neave ◽  
K. J. Hugill ◽  
I. Galbraith ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Interface Quality ◽  
Growth Interruption

Growth of GaAs and AlGaAs by MOMBE Using Phenylarsine

1991 ◽  
Vol 240 ◽  
Author(s):  
C. R. Abernathy ◽  
P. Wisk ◽  
S. J. Pearton ◽  
F. Ren ◽  
D. A. Bohling ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
The Other ◽  
Carbon Uptake ◽  
Oxygen Impurity ◽  
Impurity Incorporation ◽  
Growth System ◽  
Metal Organic ◽  
Trimethylamine Alane

ABSTRACTBecause of the extreme toxicity ofA3, it is highly desirable to employ gaseous As sources which contain fewer As-H bonds. Attempts to introduce compounds such as tertiarybutylarsine (TBAs) during growth by metal-organic molecular beam epitaxy (MOMBE) have been somewhat unsuccessful due to the need for pre-cracking of these materials, and to the extreme reactivity of the hydrocarbon radicals released upon their decomposition. These byproducts have been found to severely degrade various components in the growth system, and could lead to enhanced carbon uptake at low growth temperatures. Phenylarsine (PhAs) offers several advantages over the more common As substitutes as it has been demonstrated to decompose at growth temperatures of ≥575°C, and the byproducts of its decomposition are expected to be far less reactive than the byproducts of the other As precursors.In this paper we will discuss the growth of GaAs and AlGaAs at low growth temperatures (≤530°C) using PhAs as the As source. In this temperature range, the III-V growth rate is restricted due to the cracking efficiency of the PhAs. For example, at 530°C, a PhAs flow rate of ∼5.4 seem limits the growth rate to ∼95 Å/ min while a similar flow of AsH3 through a low pressure cracker allows for deposition at rates >250 Å/min. Further comparisons of the two As sources will be discussed regarding their effect on GaAs and AlGaAs growth rates from triethylgallium, trimethylgallium, and trimethylamine alane, and their effect on carbon and oxygen impurity incorporation.

scholarly journals Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 308 ◽  
Author(s):  
ChengDa Tsai ◽  
Ikai Lo ◽  
YingChieh Wang ◽  
ChenChi Yang ◽  
HongYi Yang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Flux Ratio ◽  
Indium Content ◽  
High Indium Content

Indium-incorporation with InxGa1-xN layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of InxGa1-xN layer increased to 44.2% with an In/(In + Ga) flux ratio of up to 0.6 for a growth temperature of 620 °C, and quickly dropped with a flux ratio of 0.8. At a fixed In/(In + Ga) flux ratio of 0.6, we found that the indium content decreased as the growth temperature increased from 600 °C to 720 °C and dropped to zero at 780 °C. By adjusting the growth parameters, we demonstrated an appropriate InxGa1-xN layer as a buffer to grow high-indium-content InxGa1-xN/GaN microdisk quantum wells for micro-LED applications.

Optical Quality Dependence on Growth Rate for Solid-Source Molecular Beam Epitaxy Grown Highly Strained GaInAsSb/GaAs Quantum Wells

2004 ◽  
Vol 43 (No. 12B) ◽  
pp. L1569-L1571 ◽  
Author(s):  
Masataka Ohta ◽  
Tomoyuki Miyamoto ◽  
Tetsuya Matsuura ◽  
Yasutaka Matsui ◽  
Tatsuya Furuhata ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Optical Quality ◽  
Highly Strained

scholarly journals High Growth Rate Metal-Organic Molecular Beam Epitaxy for the Fabrication of GaAs Space Solar Cells

1998 ◽  
Vol 551 ◽  
Author(s):  
A. Freundlich ◽  
F. Newman ◽  
L. Aguilar ◽  
M. F. Vilela ◽  
C. Monier
Keyword(s):  
Growth Rate ◽  
Solar Cells ◽  
Molecular Beam Epitaxy ◽  
Growth Rates ◽  
Molecular Beam ◽  
Flux Ratio ◽  
High Growth ◽  
High Growth Rate ◽  
Layer By Layer ◽  
Metal Organic

AbstractRealization of high quality GaAs photovoltaic materials and devices by Metal-organic Molecular Beam Epitaxy (MOMBE) with growth rates in excess of 3 microns/ hours is demonstrated. Despite high growth rates, the optimization of III/V flux-ratio and growth temperatures leads to a two dimensional layer by layer growth mode characterized by a (2×4) RHEED diagrams and strong intensity oscillations. The not intentionally doped layers exhibit low background impurity concentrations and good luminescence properties. Both n(Si) and p(Be) doping studies in the range of concentrations necessary for photovoltaic device generation are reported. Preliminary GaAs (p/n) tunnel diodes and solar cells fabricated at growth rates in excess of 31µm/h exhibit performances comparable to state of the art and stress the potential of the high growth rate MOMBE as a reduced toxicity alternative for the production of Space 111-V solar cells.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

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