scholarly journals High Growth Rate Metal-Organic Molecular Beam Epitaxy for the Fabrication of GaAs Space Solar Cells

1998 ◽  
Vol 551 ◽  
Author(s):  
A. Freundlich ◽  
F. Newman ◽  
L. Aguilar ◽  
M. F. Vilela ◽  
C. Monier
Keyword(s):  
Growth Rate ◽  
Solar Cells ◽  
Molecular Beam Epitaxy ◽  
Growth Rates ◽  
Molecular Beam ◽  
Flux Ratio ◽  
High Growth ◽  
High Growth Rate ◽  
Layer By Layer ◽  
Metal Organic

AbstractRealization of high quality GaAs photovoltaic materials and devices by Metal-organic Molecular Beam Epitaxy (MOMBE) with growth rates in excess of 3 microns/ hours is demonstrated. Despite high growth rates, the optimization of III/V flux-ratio and growth temperatures leads to a two dimensional layer by layer growth mode characterized by a (2×4) RHEED diagrams and strong intensity oscillations. The not intentionally doped layers exhibit low background impurity concentrations and good luminescence properties. Both n(Si) and p(Be) doping studies in the range of concentrations necessary for photovoltaic device generation are reported. Preliminary GaAs (p/n) tunnel diodes and solar cells fabricated at growth rates in excess of 31µm/h exhibit performances comparable to state of the art and stress the potential of the high growth rate MOMBE as a reduced toxicity alternative for the production of Space 111-V solar cells.

GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method

1998 ◽  
Vol 191 (1-2) ◽  
pp. 31-33 ◽  
Author(s):  
Xiaobing Li ◽  
Dianzhao Sun ◽  
Jianping Zhang ◽  
Meiying Kong
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Growth ◽  
High Growth Rate ◽  
Gas Source ◽  
Molecular Beam Epitaxy Method

Improved GaInAs/GaAs heterostructures by high growth rate molecular beam epitaxy

1994 ◽  
Vol 64 (20) ◽  
pp. 2664-2666 ◽  
Author(s):  
N. Grandjean ◽  
J. Massies ◽  
M. Leroux ◽  
J. Leymarie ◽  
A. Vasson ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Growth ◽  
High Growth Rate

Epitaxial growth of GaN with a high growth rate of 1.4μm/h by RF-radical source molecular beam epitaxy

1998 ◽  
Vol 189-190 ◽  
pp. 385-389 ◽  
Author(s):  
Nobuhiko Fujita ◽  
Masaki Yoshizawa ◽  
Kouichi Kushi ◽  
Hajime Sasamoto ◽  
Akihiko Kikuchi ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Growth ◽  
High Growth Rate

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

Control of Materials and Interfaces in μc-Si:H-based Solar Cells Grown at High Rate

2011 ◽  
Vol 1321 ◽  
Author(s):  
Yasushi Sobajima ◽  
Chitose Sada ◽  
Akihisa Matsuda ◽  
Hiroaki Okamoto
Keyword(s):  
Growth Rate ◽  
Solar Cells ◽  
Film Growth ◽  
Defect Density ◽  
Density Measurement ◽  
High Growth ◽  
High Growth Rate ◽  
High Rate ◽  
Bulk Region ◽  
Dangling Bond

ABSTRACTGrowth process of microcrystalline silicon (μc-Si:H) using plasma-enhanced chemicalvapor- deposition method under high-rate-growth condition has been studied for the control of optoelectronic properties in the resulting materials. We have found two important things for the spatial-defect distribution in the resulting μc-Si:H through a precise dangling-bond-density measurement, e. g., (1) dangling-bond defects are uniformly distributed in the bulk region of μc- Si:H films independent of their crystallite size and (2) large number of dangling bonds are located at the surface of μc-Si:H especially when the film is deposited at high growth rate. Starting procedure of film growth has been investigated as an important process to control the dangling-bond-defect density in the bulk region of resulting μc-Si:H through the change in the electron temperature by the presence of particulates produced at the starting period of the plasma. Deposition of Si-compress thin layer on μc-Si:H grown at high rate followed by thermal annealing has been proposed as an effective method to reduce the defect density at the surface of resulting μc-Si:H. Utilizing the starting-procedure-controlling method and the compress-layerdeposition method together with several interface-controlling methods, we have demonstrated the fabrication of high conversion-efficiency (9.27%) substrate-type (n-i-p) μc-Si:H solar cells whose intrinsic μc-Si:H layer is deposited at high growth rate of 2.3 nm/sec.

Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

2015 ◽  
Vol 118 (15) ◽  
pp. 155302 ◽  
Author(s):  
Brendan P. Gunning ◽  
Evan A. Clinton ◽  
Joseph J. Merola ◽  
W. Alan Doolittle ◽  
Rich C. Bresnahan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Rates ◽  
Molecular Beam ◽  
High Growth ◽  
Nitrogen Species ◽  
Ion Content
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