Influence of growth interruption on inverted interface quality in single AlAs‐GaAs quantum wells grown by molecular beam epitaxy

1990 ◽  
Vol 68 (11) ◽  
pp. 5595-5600 ◽  
Author(s):  
J. Zhang ◽  
P. Dawson ◽  
J. H. Neave ◽  
K. J. Hugill ◽  
I. Galbraith ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Interface Quality ◽  
Growth Interruption

The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy

1993 ◽  
Vol 8 (12) ◽  
pp. 3122-3125 ◽  
Author(s):  
S.F. Yoon ◽  
H.M. Li ◽  
K. Radhakrishnan ◽  
D.H. Zhang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Growth Interruption ◽  
Interface Fluctuations ◽  
Low Temperature Photoluminescence

Low-temperature photoluminescence measurements have been taken to monitor the changes in the properties of strained GaAs/InGaAs/GaAs quantum wells grown by molecular beam epitaxy at different substrate (well) temperatures with and without a 90 s-growth-interruption at the heterointerfaces. Sharp exciton peaks with average linewidths as low as 1.7 meV were observed in all the spectra. The spectra from the samples grown employing interrupts were narrower than those without interrupts, indicating structurally improved interfaces. Further linewidth narrowing was also seen in samples employing an additional interrupt of the same duration at the bottom InGaAs/GaAs interface, or by increasing the interrupt time at the top GaAs/InGaAs interface to 180 s. A consistent reduction in the linewidth was also observed in wells grown at higher temperatures. This is most likely due to greater indium re-evaporation leading to a reduction in strain, well width, and interface fluctuations.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

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