Growth kinetics, impurity incorporation, defect generation, and interface quality of molecular-beam epitaxy grown AlGaAs/GaAs quantum wells: Role of group III and group V fluxes

1989 ◽  
Vol 7 (4) ◽  
pp. 704 ◽  
Author(s):  
S. Munnix
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Impurity Incorporation ◽  
Interface Quality ◽  
Group V ◽  
Group Iii

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

scholarly journals Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 858-863
Author(s):  
Huajie Chen ◽  
A. R. Smith ◽  
R. M. Feenstra ◽  
D. W. Greve ◽  
J. E. Northrup
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Growth Parameters ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Group V ◽  
Group Iii ◽  
Ingan Alloys

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

GaN/AlN multiple quantum wells grown by molecular beam epitaxy: effect of growth kinetics on radiative recombination efficiency

2020 ◽  
Vol 709 ◽  
pp. 138216
Author(s):  
Chirantan Singha ◽  
Sayantani Sen ◽  
Alakananda Das ◽  
Anirban Saha ◽  
Pallabi Pramanik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Kinetics ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Recombination Efficiency

Study of As and P Incorporation Behavior in GaAsP by Gas-Source Molecular-Beam Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Ex Situ ◽  
Limited Growth ◽  
Group V ◽  
Group Iii ◽  
Gas Source ◽  
Simple Kinetic Model

ABSTRACTA simple kinetic model has been developed to explain the agreement between in situ and ex situ determination of phosphorus composition in GaAs1−xPx (x < 0.4) epilayers grown on GaAs (001) by gas-source molecular-beam epitaxy (GSMBE). The in situ determination is by monitoring the intensity oscillations of reflection high-energy-electron diffraction during group-V-limited growth, and the ex situ determination is by x-ray rocking curve measurement of GaAs1−xPx/GaAs strained-layer superlattices grown under group-III-limited growth condition.

Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

2007 ◽  
Vol 101 (10) ◽  
pp. 103526 ◽  
Author(s):  
J. Miguel-Sánchez ◽  
A. Guzmán ◽  
U. Jahn ◽  
A. Trampert ◽  
J. M. Ulloa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Structural Properties ◽  
Molecular Beam ◽  
Nitrogen Species

Use of Valved, Solid Group V Sources for the Growth of GaAs/GaInP Heterostructures by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
F. G. Johnson ◽  
G. W. Wicks ◽  
R. E. Viturro ◽  
R. Laforce
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Group V ◽  
X Ray

ABSTRACTWe report on the first growth of GaAs/Ga0.5In0.5P heterostructures by conventional molecular beam epitaxy using solid-source valved crackers to supply both the arsenic and the phosphorus fluxes. By regulating the group V fluxes with the cracker needle valves, arsenide-phosphide heterostructures were successfully grown with virtually no group V intermixing between layers. For comparison, similar heterostructure samples were grown using only the mechanical shutters to switch between group V fluxes, and the resulting layers were severely intermixed. The amount of group V intermixing was shown to be independent of whether As2 or As4 fluxes were used to grow the layers. A GaAs/Ga0.5In0.5P multiple quantum well sample was also grown using the valved crackers. Photoluminescence peaks were clearly observed from 40 Å, 80 Å, and 300 Å GaAs quantum wells, but no luminescence was detected from a 20 Å well. An 80Å GaAs/ 80Å Ga0.5In0.5P superlattice was grown, and superlattice satellite peaks were observed in the X-ray rocking curves. The appearance of misfit dislocations suggests localized intermixing at the interfaces.

Influence of growth interruption on inverted interface quality in single AlAs‐GaAs quantum wells grown by molecular beam epitaxy

1990 ◽  
Vol 68 (11) ◽  
pp. 5595-5600 ◽  
Author(s):  
J. Zhang ◽  
P. Dawson ◽  
J. H. Neave ◽  
K. J. Hugill ◽  
I. Galbraith ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Interface Quality ◽  
Growth Interruption

Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

2011 ◽  
Vol 323 (1) ◽  
pp. 68-71 ◽  
Author(s):  
A.M. Mizerov ◽  
V.N. Jmerik ◽  
M.A. Yagovkina ◽  
S.I. Troshkov ◽  
P.S. Kop'ev ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of
Sign in / Sign up

Export Citation Format

Share Document