A novel high-k gate dielectric HfLaO for next generation CMOS technology

2006 ◽  
Author(s):  
Ming-fu Li ◽  
X.P. Wang ◽  
H.Y. Yu ◽  
C.X. Zhu ◽  
Albert Chin ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Cmos Technology ◽  
Next Generation ◽  
High K ◽  
High K Gate Dielectric

Titanium–aluminum oxynitride (TAON) as high-k gate dielectric for sub-32nm CMOS technology

2010 ◽  
Vol 87 (3) ◽  
pp. 267-270 ◽  
Author(s):  
J. Miyoshi ◽  
J.A. Diniz ◽  
A.D. Barros ◽  
I. Doi ◽  
A.A.G. Von Zuben
Keyword(s):  
Gate Dielectric ◽  
Cmos Technology ◽  
Aluminum Oxynitride ◽  
High K ◽  
Titanium Aluminum ◽  
High K Gate Dielectric
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