SIMOX/SOI processes: flexibility based on thermodynamic considerations

SIMOX ◽  
2011 ◽  
pp. 63-76
Author(s):  
A. Ogura
Keyword(s):  
Simox Soi

Independent implant parameter effects on SIMOX SOI dislocation formation

1997 ◽  
Vol 46 (1-3) ◽  
pp. 8-13 ◽  
Author(s):  
R. Datta ◽  
L.P. Allen ◽  
R.P. Dolan ◽  
K.S. Jones ◽  
M. Farley
Keyword(s):  
Dislocation Formation ◽  
Simox Soi

Study of gate oxide leakage and charge trapping in ZMR and SIMOX SOI MOSFETs

1988 ◽  
Vol 9 (5) ◽  
pp. 235-237 ◽  
Author(s):  
C.-T. Lee ◽  
J.A. Burns
Keyword(s):  
Charge Trapping ◽  
Gate Oxide ◽  
Simox Soi

Radiation response of pseudo-MOS transistors fabricated in hardened fully-depleted SIMOX SOI wafers

2009 ◽  
Vol 33 (10) ◽  
pp. 866-869 ◽  
Author(s):  
Bi Da-Wei ◽  
Zhang Zheng-Xuan ◽  
Zhang Shuai ◽  
Chen Ming ◽  
Yu Wen-Jie ◽  
...  
Keyword(s):  
Radiation Response ◽  
Mos Transistors ◽  
Fully Depleted ◽  
Simox Soi

Effect of Hydrogen Implantation on SIMOX SOI Materials

2004 ◽  
Vol 21 (1) ◽  
pp. 149-152 ◽  
Author(s):  
Yi Wan-Bing ◽  
Chen Jing ◽  
Chen Meng ◽  
Wang Xi ◽  
Zou Shi-Chang
Keyword(s):  
Hydrogen Implantation ◽  
Simox Soi

Thermally activated processes in the buried oxide of SIMOX SOI structures and devices

2001 ◽  
Vol 45 (4) ◽  
pp. 575-584
Author(s):  
V.S Lysenko ◽  
A.N Nazarov ◽  
V.I Kilchytska ◽  
I.N Osiyuk ◽  
I.P Tyagulski ◽  
...  
Keyword(s):  
Thermally Activated ◽  
Buried Oxide ◽  
Activated Processes ◽  
Simox Soi

Total Dielectric Isolation (TDI) of Device Islands Using SIMOX/SOI Technology

1987 ◽  
Vol 107 ◽  
Author(s):  
P L F Hemment ◽  
A K Robinson ◽  
K J Reeson ◽  
J R Davis ◽  
J R Kilner ◽  
...  
Keyword(s):  
Ion Beam ◽  
Planar Layer ◽  
Thermal Oxide ◽  
Ion Beam Synthesis ◽  
Soi Technology ◽  
Simox Soi

AbstractA method of achieving total dielectric isolation (TDI) of device islands (or larger areas) using ion beam synthesis to form a continuous but non planar layer of SiO2 is described. The technique involves implantation through a patterned masking layer in which windows have been opened to define the dimensions and location of the islands. TDI structures have been successfully formed in annealed (1300°C, 5 hours) wafers implanted with a dose of 2.2 x 1018 O+ cm2 at 200 keV, using a thermal oxide mask of thickness 4750 Å.

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