Total Dielectric Isolation (TDI) of Device Islands Using SIMOX/SOI Technology

1987 ◽  
Vol 107 ◽  
Author(s):  
P L F Hemment ◽  
A K Robinson ◽  
K J Reeson ◽  
J R Davis ◽  
J R Kilner ◽  
...  
Keyword(s):  
Ion Beam ◽  
Planar Layer ◽  
Thermal Oxide ◽  
Ion Beam Synthesis ◽  
Soi Technology ◽  
Simox Soi

AbstractA method of achieving total dielectric isolation (TDI) of device islands (or larger areas) using ion beam synthesis to form a continuous but non planar layer of SiO2 is described. The technique involves implantation through a patterned masking layer in which windows have been opened to define the dimensions and location of the islands. TDI structures have been successfully formed in annealed (1300°C, 5 hours) wafers implanted with a dose of 2.2 x 1018 O+ cm2 at 200 keV, using a thermal oxide mask of thickness 4750 Å.

Application of FIB Circuit Edit in Analysis of Memory Failure of SOI Devices

2006 ◽  
Author(s):  
Z. G. Song ◽  
S. K. Loh ◽  
X. H. Zheng ◽  
S.P. Neo ◽  
C. K. Oh
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Silicon On Insulator ◽  
First Case ◽  
Edx Analyses ◽  
Memory Failure ◽  
Soi Devices ◽  
Voltage Contrast ◽  
Soi Technology

Abstract This article presents two cases to demonstrate the application of focused ion beam (FIB) circuit edit in analysis of memory failure of silicon on insulator (SOI) devices using XTEM and EDX analyses. The first case was a single bit failure of SRAM units manufactured with 90 nm technology in SOI wafer. The second case was the whole column failure with a single bit pass for a SRAM unit. From the results, it was concluded that FIB circuit edit and electrical characterization is a good methodology for further narrowing down the defective location of memory failure, especially for SOI technology, where contact-level passive voltage contrast is not suitable.

Ion beam synthesis of Au nanoparticles embedded nano-composite glass

2013 ◽  
Author(s):  
Ranjana S. Varma ◽  
D. C. Kothari ◽  
Ravi Kumar ◽  
P. Kumar ◽  
S. S. Santra ◽  
...  
Keyword(s):  
Au Nanoparticles ◽  
Ion Beam ◽  
Nano Composite ◽  
Ion Beam Synthesis ◽  
Composite Glass

Mev Ion Beam Synthesis of Well-Defined Buried 3C-Sic Layers in Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
J.K.N. Lindner ◽  
B. Götz ◽  
A. Frohnwieser ◽  
B. Stritzker
Keyword(s):  
Electron Diffraction ◽  
Depth Distribution ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Synthesis ◽  
Post Implantation

AbstractWell-defined, homogenous, deep-buried 3C-SiC layers have been formed in silicon by ion beam synthesis using MeV C+ ions. Layers are characterized by RBS/channeling, X-ray diffraction, x-sectional TEM and electron diffraction. The redistribution of implanted carbon atoms into a rectangular carbon depth distribution associated with a well-defined layer during the post-implantation anneal is shown to depend strongly on the existence of crystalline carbide precipitates in the as-implanted state.

Ion beam synthesis of the diamond like carbon films for nanoimprint lithography applications

2006 ◽  
Vol 515 (2) ◽  
pp. 636-639 ◽  
Author(s):  
Š. Meškinis ◽  
V. Kopustinskas ◽  
K. Šlapikas ◽  
S. Tamulevičius ◽  
A. Guobienë ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Ion Beam Synthesis

Ion beam synthesis and carrier dynamics of ZnO nanoparticles embedded in a SiO2 matrix

2013 ◽  
Vol 112 (3) ◽  
pp. 801-806 ◽  
Author(s):  
B. Pandey ◽  
P. R. Poudel ◽  
A. K. Singh ◽  
A. Neogi ◽  
D. L. Weathers
Keyword(s):  
Zno Nanoparticles ◽  
Ion Beam ◽  
Carrier Dynamics ◽  
Sio2 Matrix ◽  
Ion Beam Synthesis

Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis

1998 ◽  
Vol 514 ◽  
Author(s):  
M. F. Wu ◽  
A. Vantomne ◽  
S. Hogg ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ion Beam ◽  
Hexagonal Structure ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Thermal Stability Of

ABSTRACTThe Nd-disilicide, which exists only in a tetragonal or an orthorhombic structure, cannot be grown epitaxially on a Si(111) substrate. However, by adding Y and using channeled ion beam synthesis, hexagonal Nd0.32Y0.68Si1.7 epilayers with lattice constant of aepi = 0.3915 nm and cepi = 0.4152 nm and with good crystalline quality (χmin of Nd and Y is 3.5% and 4.3 % respectively) are formed in a Si(111) substrate. This shows that the addition of Y to the Nd-Si system forces the latter into a hexagonal structure. The epilayer is stable up to 950 °C; annealing at 1000 °C results in partial transformation into other phases. The formation, the structure and the thermal stability of this ternary silicide have been studied using Rutherford backscattering/channeling, x-ray diffraction and transmission electron microscopy.

Buried (Fe1 −x Co x )Si2 layers with variable band gap formed by ion beam synthesis

1996 ◽  
Vol 62 (2) ◽  
pp. 155-162 ◽  
Author(s):  
D. Panknin ◽  
E. Wieser ◽  
W. Skorupa ◽  
W. Henrion ◽  
H. Lange
Keyword(s):  
Band Gap ◽  
Ion Beam ◽  
Ion Beam Synthesis ◽  
Variable Band Gap

Formation mechanism and structures of buried oxy-nitride layers produced by ion beam synthesis

Vacuum ◽  
1986 ◽  
Vol 36 (11-12) ◽  
pp. 891-895 ◽  
Author(s):  
KJ Reeson ◽  
PLF Hemment ◽  
JA Kilner ◽  
RJ Chater ◽  
CD Meekison ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Ion Beam ◽  
Ion Beam Synthesis ◽  
Nitride Layers
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