Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
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Published By Springer Netherlands

9780792350088, 9789401150088

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Chemical Perspectives on Growth and Properties of Ultrathin SiO2 Layers

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices ◽

10.1007/978-94-011-5008-8_9 ◽

1998 ◽

pp. 117-129 ◽

Cited By ~ 4

Author(s):

G. F. Cerofolini ◽

N. Re

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The Current Status and Future Trends of SIMOX/SOI, New Technological Applications of the SIC/SOI System

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices ◽

10.1007/978-94-011-5008-8_36 ◽

1998 ◽

pp. 477-491

Author(s):

J. Stoemenos

Keyword(s):

Current Status ◽

Future Trends ◽

Simox Soi

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Challenges in the Oxidation of Strained SiGe Layers

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices ◽

10.1007/978-94-011-5008-8_35 ◽

1998 ◽

pp. 461-475 ◽

Cited By ~ 5

Author(s):

Valentin Craciun ◽

Jun-Ying Zhang ◽

Ian W. Boyd

Keyword(s):

Strained Sige

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The Initial Phases of Sic-SiO2 Interface Formation by Low-Temperature (300 ºC) Remote Plasma-Assisted Oxidation of Si and C Faces on Flat and Vicinal 6H SiC

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices ◽

10.1007/978-94-011-5008-8_34 ◽

1998 ◽

pp. 447-459

Author(s):

G. Lucovsky ◽

H. Niimi

Keyword(s):

Low Temperature ◽

Interface Formation ◽

Remote Plasma

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Heterojunction Al/SiO2/n-Si Device as an Auger Transistor

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices ◽

10.1007/978-94-011-5008-8_28 ◽

1998 ◽

pp. 383-390 ◽

Cited By ~ 3

Author(s):

E. V. Ostroumova ◽

A. A. Rogachev

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Scanning Tunneling Microscopy on Oxide and Oxynitride Formation, Growth and Etching of Si Surfaces

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices ◽

10.1007/978-94-011-5008-8_20 ◽

1998 ◽

pp. 289-307 ◽

Cited By ~ 2

Author(s):

H. Neddermeyer ◽

T. Doege ◽

E. Harazim ◽

R. Kliese ◽

A. Kraus ◽

...

Keyword(s):

Scanning Tunneling Microscopy ◽

Scanning Tunneling ◽

Tunneling Microscopy

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Core-Level Shifts in Si(001)-SiO2 Systems: The Value of First-Principle Investigations

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices ◽

10.1007/978-94-011-5008-8_7 ◽

1998 ◽

pp. 89-102 ◽

Cited By ~ 5

Author(s):

Alfredo Pasquarello ◽

Mark S. Hybertsen ◽

G.-M. Rignanese ◽

Roberto Car

Keyword(s):

Core Level ◽

First Principle ◽

Level Shifts

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Future Trends in SiC-Based Microelectronic Devices

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices ◽

10.1007/978-94-011-5008-8_33 ◽

1998 ◽

pp. 431-445

Author(s):

A. A. Lebedev ◽

V. E. Chelnokov

Keyword(s):

Future Trends ◽

Microelectronic Devices

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A New Model of Photoelectric Phenomena in MOS Structures

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices ◽

10.1007/978-94-011-5008-8_25 ◽

1998 ◽

pp. 343-357 ◽

Cited By ~ 2

Author(s):

H. M. Przewlocki

Keyword(s):

New Model ◽

Mos Structures

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Electrical Defects at the SiO2/Si Interface Studied by EPR

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices ◽

10.1007/978-94-011-5008-8_23 ◽

1998 ◽

pp. 325-333 ◽

Cited By ~ 4

Author(s):

James H. Stathis

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Fundamental Aspects of Ultrathin Dielectrics on Si-based DevicesLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer Netherlands

Chemical Perspectives on Growth and Properties of Ultrathin SiO2 Layers

The Current Status and Future Trends of SIMOX/SOI, New Technological Applications of the SIC/SOI System

Challenges in the Oxidation of Strained SiGe Layers

The Initial Phases of Sic-SiO2 Interface Formation by Low-Temperature (300 ºC) Remote Plasma-Assisted Oxidation of Si and C Faces on Flat and Vicinal 6H SiC

Heterojunction Al/SiO2/n-Si Device as an Auger Transistor

Scanning Tunneling Microscopy on Oxide and Oxynitride Formation, Growth and Etching of Si Surfaces

Core-Level Shifts in Si(001)-SiO2 Systems: The Value of First-Principle Investigations

Future Trends in SiC-Based Microelectronic Devices

A New Model of Photoelectric Phenomena in MOS Structures

Electrical Defects at the SiO2/Si Interface Studied by EPR

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
Latest Publications