Fundamental processes in SIMOX layer formation: ion implantation and oxide growth

ABSTRACTThis review emphasizes controlled shallow doping of GaAs by ion implantation for state-of-art GaAs IC technology. Electrical activation behavior of Si+ and SiF+ implanted GaAs after RTA under capless and PECVD Si3N4-capped conditions will be compared. It will be demonstrated that a remarkable improvement (> 20 %) both in carrier activation and as well mobility can be achieved by co-implanting low doses (< 1013 cm−2 of Al+ into n-dopant (including Si, Se and Te) implanted GaAs and subsequently annealing the material under capless RTA conditions. The maximum improvement in the electrical results with Al+ co-implants occurs for doses (e.g. < 1013 cm−2 for 30 keV Si+) which are used for fabricating shallow channels for submicron GaAs MESFETs. Complex dopant-annealing environment interactions during a buried p layer formation (using either Mg+ or Be+) will be discussed.

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Trench Formation on Ion Implanted SiC Surfaces after Thermal Oxidation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.777 ◽

2005 ◽

Vol 483-485 ◽

pp. 777-780 ◽

Cited By ~ 1

Author(s):

Wook Bahng ◽

Geun Ho Song ◽

Nam Kyun Kim ◽

Sang Cheol Kim ◽

Hyoung Wook Kim ◽

...

Keyword(s):

Growth Rate ◽

High Temperature ◽

Ion Implantation ◽

Doping Concentration ◽

Side Wall ◽

Surface Region ◽

Surface Roughening ◽

Oxide Growth ◽

High Temperature Annealing ◽

Thermal Oxide

The effects of the damage induced during ion implantation on the surface roughening and oxide growth rate were investigated. Using several scheme of doses and acceleration energies, it is found that the amount of the dose predominantly produce damage rather than the acceleration energy, especially near the surface region. It was also found that the damage affects not only the oxide growth rate but also the surface roughening during high temperature annealing. The edge of highly implanted area may have higher doping concentration due to the vicinal side wall effect of the thick oxide mask for ion implantation. It was confirmed by the trench formation after thermal oxide remove.

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Ion Implantation of High Doses of Co in Si1−xGex Alloys

MRS Proceedings ◽

10.1557/proc-235-299 ◽

1991 ◽

Vol 235 ◽

Cited By ~ 1

Author(s):

A. Lauwers ◽

K. Maex ◽

W. Vandervorst ◽

G. Brijs ◽

J. Poortmans ◽

...

Keyword(s):

Ion Implantation ◽

Sheet Resistance ◽

Phase Formation ◽

Crystalline Structure ◽

Layer Formation ◽

Silicide Layer ◽

Buried Layer ◽

High Doses

ABSTRACTThe implantation of high doses of Co in Si1−xGex alloys is investigated for several Ge concentrations. The aim of this work is to monitor phase formation, layer formation and crystalline structure of the layers. The samples are evaluated by RBS, SIMS, TEM and sheet resistance measurements. Similar as for the implantation of high doses of Co in Si, buried layer formation of CoSi2 in the Si1−x Gex alloy is observed with a concommitant expulsion of Ge out of the silicide layer.

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Delta layer formation of silver nanoparticles in thin silicon dioxide film by negative ion implantation

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2004.08.088 ◽

2005 ◽

Vol 196 (1-3) ◽

pp. 39-43 ◽

Cited By ~ 13

Author(s):

Hiroshi Tsuji ◽

Nobutoshi Arai ◽

Takuya Matsumoto ◽

Kazuya Ueno ◽

Kouichiro Adachi ◽

...

Keyword(s):

Silver Nanoparticles ◽

Ion Implantation ◽

Silicon Dioxide ◽

Negative Ion ◽

Layer Formation ◽

Silicon Dioxide Film ◽

Thin Silicon ◽

Delta Layer ◽

Dioxide Film

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keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

MRS Proceedings ◽

10.1557/proc-354-171 ◽

1994 ◽

Vol 354 ◽

Cited By ~ 18

Author(s):

J.K.N. Lindner ◽

A. Frohnwieser ◽

B. Rauschenbach ◽

B. Stritzker

Keyword(s):

Ion Implantation ◽

Annealing Time ◽

Annealing Temperature ◽

Ion Beam ◽

High Dose ◽

Layer Formation ◽

Substrate Orientation ◽

Ion Beam Synthesis ◽

Buried Layers ◽

Precipitate Layer

AbstractHomogenous, epitaxial buried layers of 3C-SÍC have been formed in Si(100) and Si(lll) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1250 °C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favourable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.

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