Amorphous-layer formation in GaAs by ion implantation

1978 ◽  
Vol 14 (21) ◽  
pp. 695 ◽  
Author(s):  
Min-Shyong Lin
Keyword(s):  
Ion Implantation ◽  
Amorphous Layer ◽  
Layer Formation

On amorphous layer formation in silicon by ion implantation

1974 ◽  
Vol 22 (3) ◽  
pp. 205-208 ◽  
Author(s):  
J. C. Bourgoin ◽  
J. F. Morhange ◽  
R. Beserman
Keyword(s):  
Ion Implantation ◽  
Amorphous Layer ◽  
Layer Formation

Ion implantation of silicon wafers for defect-reduced doped layer formation with low dopant atom diffusion

1994 ◽  
Vol 9 (11) ◽  
pp. 2987-2992
Author(s):  
Naoto Shigenaka ◽  
Shigeki Ono ◽  
Tsuneyuki Hashimoto ◽  
Motomasa Fuse ◽  
Nobuo Owada
Keyword(s):  
Ion Implantation ◽  
Amorphous Phase ◽  
Amorphous Layer ◽  
Defect Layer ◽  
Silicon Wafers ◽  
Dopant Atom ◽  
Layer Formation ◽  
Atom Diffusion ◽  
Enhanced Diffusion ◽  
Dopant Atoms

A new process for ion implantation into silicon wafers was proposed. This process has an additional implantation step to form an amorphous phase. At first self-ions are implanted into a cooled wafer (< −30 °C) to form the amorphous phase, and subsequently dopant atoms are implanted to form a doped layer within the amorphous layer. After annealing above 650 °C, the silicon wafer is completely recrystallized, and no defects with sizes detectable by TEM are present near the doped layer. There is indeed a defect layer in the wafer; however, it lies along the amorphous/crystal interface that is behind the doped layer. The concentration profile of the dopant atoms is not changed during epitaxial recrystallization, and further dopant atom diffusion during annealing is limited to about 0.05 μm, because defect-enhanced diffusion does not occur. The double implantation method is considered to be effective for doped layer formation in the VLSI fabrication process.

Amorphous Layer Formation on Nickel Alloy Surface by Intense Pulsed Ion Beam Irradiation

1996 ◽  
Vol 35 (Part 1, No. 3) ◽  
pp. 1857-1861 ◽  
Author(s):  
Mitsuyasu Yatsuzuka ◽  
Yoshiyuki Hashimoto ◽  
Tohru Yamasaki ◽  
Hitoshi Uchida
Keyword(s):  
Nickel Alloy ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Alloy Surface ◽  
Layer Formation ◽  
Beam Irradiation ◽  
Ion Beam Irradiation

scholarly journals Exploring Differences in Amorphous Layer Formation during FIB Sample Preparation between Metals and Non Metals

2016 ◽  
Vol 22 (S3) ◽  
pp. 144-145
Author(s):  
Michael Presley ◽  
Jacob Jensen ◽  
Dan Huber ◽  
Hamish Fraser
Keyword(s):  
Sample Preparation ◽  
Amorphous Layer ◽  
Layer Formation

TEM Characterization of Arsenic and Phosphorus Implanted Silicon Devices

1997 ◽  
Vol 3 (S2) ◽  
pp. 467-468
Author(s):  
Lancy Tsung ◽  
Hun-Lian Tsai ◽  
Alwin Tsao ◽  
Makoto Takemura
Keyword(s):  
Ion Implantation ◽  
Crystalline Silicon ◽  
Source Region ◽  
Amorphous Layer ◽  
Common Source ◽  
Silicon Devices ◽  
Similar Region ◽  
Before And After ◽  
P Type ◽  
Silicon Device

Ion implantation of arsenic and phosphorus is a common practice in silicon devices for the formation of transistor source/drain regions. We used a TEM equipped with EDX capabilities to investigate effects of ion implantation in actual devices before and after annealing. A 200 kev field emission gun TEM was used in this study. Two implant cases were studied here. Both samples are p-type, (100) Si wafers.Figure 1 shows the microstructure in a common source region of a silicon device after being implanted by phosphorus (4x1014 cm−2 at 30 kv, 0°), while Figure 2 shows a similar region for arsenic implantation (5x1015 cm−2 at 45 kv, 0°). No screen layer was used during implantation. The phosphorus implant results in a ˜0.05 μm amorphous layer sandwiched between heavily damaged crystalline silicon. High resolution images reveal a rough amorphous/damaged crystalline boundary and high density defects due to silicon lattice displacements.

A Study of the Corrosion Resistance of M50NiL Bearing Steel by Ion Implantation

2014 ◽  
Vol 936 ◽  
pp. 1132-1137
Author(s):  
J. Jin ◽  
Y.B. Chen ◽  
K.W. Gao ◽  
X.l. Huang
Keyword(s):  
Corrosion Resistance ◽  
Ion Implantation ◽  
Grain Boundaries ◽  
Potentiodynamic Polarization ◽  
Corrosion Potential ◽  
Amorphous Layer ◽  
Bearing Steel ◽  
Detection Methods ◽  
Corrosion Reaction ◽  
Strengthening Phases

The corrosion resistance of metal-N double-element alternate implanted M50NiL bearing steel was investigated by potentiodynamic polarization and detection methods of SEM, XPS, AES and TEM. The results showed that ion implanted M50NiL can increase the corrosion potential of substrate, reduce the corrosion active points and inhibit the corrosion reaction induced at the grain boundaries. The formed amorphous layer and strengthening phases take main roles in improving the corrosion resistance of M50NiL bearing steel.

Crystallization, Diffusion and Phase Separation in Sapphire Amorphised by Indium Ion Implantation

1988 ◽  
Vol 100 ◽  
Author(s):  
D. X. Cao ◽  
D. K. Sood ◽  
A. P. Pogany
Keyword(s):  
Phase Separation ◽  
Ion Implantation ◽  
Isothermal Annealing ◽  
Amorphous Layer ◽  
Dose Dependence ◽  
Rapid Diffusion ◽  
Amorphous Surface ◽  
Indium Ion

ABSTRACTIndium implantation into a-axis sapphire to peak concentrations of 8–45 mol % In produces amorphous surface layers.Migration of In during isothermal annealing at 600°C shows a strong ion dose dependence. For a dose of 6×1016In/cm2, two distinct types of In migration are seen - a) rapid diffusion of In within amorphous Al2O3 and b) diffusion of In into crystalline Al2O3 underlying the amorphous layer. For doses lower than 3×1016In/cm2 , no such migration of In is seen under identical anneal conditions. However, In undergoes phase separation into crystalline In2O3 particles embedded in amorphous Al2O3 at all doses.

Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)

2006 ◽  
Vol 527-529 ◽  
pp. 799-802
Author(s):  
Masataka Satoh ◽  
Tomoyuki Suzuki
Keyword(s):  
Ion Implantation ◽  
Concentration Dependence ◽  
Impurity Concentration ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Amorphous Layer ◽  
Phosphorus Concentration ◽  
Recrystallization Process ◽  
Substitutional Impurity ◽  
P Concentration

The impurity concentration dependence of the recrystallization rate of phosphorus implanted 4H-SiC(11-20) has been investigated by means of Rutherford backscattering spectrometry in the annealing temperature range from 660 to 720 oC . The phosphorus ions were multiply implanted to form the implantation layer with the thickness of 200 nm and the phosphorus concentration of 1 x 1020, 4 x 1020, or 1 x 1021 /cm3, respectively. The recrystallization rate of the P ion implantation-induced amorphous layer in 4H-SiC(11-20) increases with an activation energy of 3.4 eV as does the case of the Ar ion implantation-induced amorphous layer in 6H-SiC(11-20) and (1-100). As the P concentration is increased from 1 x 1020 to 1 x 1021 /cm3, the recrystallization rate is enhanced from 3.5 to about 5nm/min, while the recrystallization rate for the Ar implantationinduced amorphous layer was 1.5 nm/min. It is suggested that the recrystallization process is enhanced by the presence of the substitutional impurity at the amorphous-crystalline interface during the recrystallization.

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