Ion Implantation of High Doses of Co in Si1−xGex Alloys

1991 ◽  
Vol 235 ◽  
Author(s):  
A. Lauwers ◽  
K. Maex ◽  
W. Vandervorst ◽  
G. Brijs ◽  
J. Poortmans ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Sheet Resistance ◽  
Phase Formation ◽  
Crystalline Structure ◽  
Layer Formation ◽  
Silicide Layer ◽  
Buried Layer ◽  
High Doses

ABSTRACTThe implantation of high doses of Co in Si1−xGex alloys is investigated for several Ge concentrations. The aim of this work is to monitor phase formation, layer formation and crystalline structure of the layers. The samples are evaluated by RBS, SIMS, TEM and sheet resistance measurements. Similar as for the implantation of high doses of Co in Si, buried layer formation of CoSi2 in the Si1−x Gex alloy is observed with a concommitant expulsion of Ge out of the silicide layer.

High-Dose and MeV-Energy Ion Implantation into Si for Buried-Layer Formation

1988 ◽  
Author(s):  
Tadashi SUZUKI ◽  
Masao TAMURA ◽  
Kiyonori OHYU ◽  
Nobuyoshi NATSUAKI
Keyword(s):  
Ion Implantation ◽  
High Dose ◽  
Layer Formation ◽  
Buried Layer

Low Temperature Ion Implantation for Buried Layer Formation

1990 ◽  
Author(s):  
T. SUZUKI ◽  
H. YAMAGUCHI ◽  
S. OHZONO ◽  
N. NATSUAKI
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Layer Formation ◽  
Buried Layer

FORMATION OF OXYGEN-FREE GADOLINIUM SILICIDE LAYER BY ION IMPLANTATION AND PULSED EXCIMER LASER IRRADIATION

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4331-4334 ◽  
Author(s):  
DEYAN HE ◽  
WENWU WANG ◽  
HAIJUN JIA ◽  
ERQING XIE
Keyword(s):  
Surface Layer ◽  
Ion Implantation ◽  
Laser Irradiation ◽  
Thermal Annealing ◽  
Excimer Laser ◽  
Continuous Layer ◽  
Silicide Layer ◽  
Excimer Laser Irradiation ◽  
Buried Layer

Buried gadolinium silicide layer was prepared by ion implantation of Gd into n-type Si (100) wafer. It was shown that GdSi 2 grains have been formed during Gd + implantation. An oxygen-free continuous layer of (112) oriented GdSi 2 was obtained after irradiating the sample using a pulsed excimer laser. Comparing with conventional thermal annealing pulsed excimer laser irradiation at energy densities close to the threshold for melting Si surface layer could prepare oxygen-free GdSi 2 buried layer within a preferred region.

SiC Buried Layer Formation Induced by Ion Implantation

1995 ◽  
Vol 47-48 ◽  
pp. 211-216 ◽  
Author(s):  
N.I. Klyui ◽  
D. Krüger ◽  
B.N. Romanyuk ◽  
V.G. Litovchenko ◽  
Hans Richter
Keyword(s):  
Ion Implantation ◽  
Layer Formation ◽  
Buried Layer

Ultra-Microhardness Tests on Ion Implanted Metal Surfaces

1981 ◽  
Vol 7 ◽  
Author(s):  
J.B. Pethica ◽  
W.C. Oliver
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Metal Surfaces ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion ◽  
High Doses ◽  
Penetration Depths ◽  
Ion Implanted

ABSTRACTTo measure the mechanical properties of ion implanted layers special microhardness tests with penetration depths less than 100 nm have been made. The results show that increases in hardness of up to 50 % may occur in a number of metals as a result of nitrogen ion implantation. Considerable carbon is also present in the implanted surfaces and when in the form of a distinct layer, may give an apparent softening of surfaces at high doses.

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