Semiconductors and Semimetals - Very High Speed Integrated Circuits: Gallium Arsenide LSI - Semiconductors and Semimetals
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Chapter 1 Active Layer Formation by Ion Implantation

Semiconductors and Semimetals - Very High Speed Integrated Circuits: Gallium Arsenide LSI - Semiconductors and Semimetals ◽

10.1016/s0080-8784(08)60092-7 ◽

1990 ◽

pp. 1-61

Author(s):

M. Kuzuhara ◽

T. Nozaki

Keyword(s):

Ion Implantation ◽

Active Layer ◽

Layer Formation

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Copyright Page

Semiconductors and Semimetals - Very High Speed Integrated Circuits: Gallium Arsenide LSI - Semiconductors and Semimetals ◽

10.1016/s0080-8784(08)60089-7 ◽

1990 ◽

pp. iv

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List of Contributors

Semiconductors and Semimetals - Very High Speed Integrated Circuits: Gallium Arsenide LSI - Semiconductors and Semimetals ◽

10.1016/s0080-8784(08)60090-3 ◽

1990 ◽

pp. vii

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Index

Semiconductors and Semimetals - Very High Speed Integrated Circuits: Gallium Arsenide LSI - Semiconductors and Semimetals ◽

10.1016/s0080-8784(08)60097-6 ◽

1990 ◽

pp. 305-309

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Preface

Semiconductors and Semimetals - Very High Speed Integrated Circuits: Gallium Arsenide LSI - Semiconductors and Semimetals ◽

10.1016/s0080-8784(08)60091-5 ◽

1990 ◽

pp. ix-x

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Chapter 5 GaAs LSI Fabrication and Performance

Semiconductors and Semimetals - Very High Speed Integrated Circuits: Gallium Arsenide LSI - Semiconductors and Semimetals ◽

10.1016/s0080-8784(08)60096-4 ◽

1990 ◽

pp. 233-303

Author(s):

M. Hirayama ◽

M. Ohmori ◽

K. Yamasaki

Keyword(s):

And Performance

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Chapter 2 Focused Ion Beam Implantation TechnologyS

Semiconductors and Semimetals - Very High Speed Integrated Circuits: Gallium Arsenide LSI - Semiconductors and Semimetals ◽

10.1016/s0080-8784(08)60093-9 ◽

1990 ◽

pp. 63-96

Author(s):

H. Hashimoto

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Ion Beam Implantation

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Contents of Previous Volumes

Semiconductors and Semimetals - Very High Speed Integrated Circuits: Gallium Arsenide LSI - Semiconductors and Semimetals ◽

10.1016/s0080-8784(08)60098-8 ◽

1990 ◽

pp. 310-317

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Chapter 4 GaAs LSI Circuit Design

Semiconductors and Semimetals - Very High Speed Integrated Circuits: Gallium Arsenide LSI - Semiconductors and Semimetals ◽

10.1016/s0080-8784(08)60095-2 ◽

1990 ◽

pp. 159-232

Author(s):

M. Ino ◽

T. Takada

Keyword(s):

Circuit Design

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Edited By

Semiconductors and Semimetals - Very High Speed Integrated Circuits: Gallium Arsenide LSI - Semiconductors and Semimetals ◽

10.1016/s0080-8784(08)60088-5 ◽

1990 ◽

pp. iii

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