Strong room temperature photoluminescence from erbium-doped silicon monoxide

1995 ◽  
Vol 31 (17) ◽  
pp. 1499-1500 ◽  
Author(s):  
S.W. Roberts ◽  
G.J. Parker
Keyword(s):  
Room Temperature ◽  
Silicon Monoxide ◽  
Room Temperature Photoluminescence ◽  
Erbium Doped ◽  
Doped Silicon

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Room‐temperature photoluminescence of erbium‐doped hydrogenated amorphous silicon

1995 ◽  
Vol 67 (24) ◽  
pp. 3599-3601 ◽  
Author(s):  
M. S. Bresler ◽  
O. B. Gusev ◽  
V. Kh. Kudoyarova ◽  
A. N. Kuznetsov ◽  
P. E. Pak ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Room Temperature Photoluminescence ◽  
Erbium Doped ◽  
Hydrogenated Amorphous

Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide

1997 ◽  
Vol 70 (14) ◽  
pp. 1790-1792 ◽  
Author(s):  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
K. D. Hirschman ◽  
P. M. Fauchet ◽  
K. L. Moore ◽  
...  
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Room Temperature Photoluminescence ◽  
Doped Silicon ◽  
Er Doped

scholarly journals The photoluminescence of erbium-doped silicon monoxide

1996 ◽  
Vol 6 (1-2) ◽  
pp. 99-102 ◽  
Author(s):  
S.W. Roberts ◽  
G.J. Parker ◽  
M. Hempstead
Keyword(s):  
Silicon Monoxide ◽  
Erbium Doped ◽  
Doped Silicon

Room-temperature photoluminescence of erbium-doped amorphous hydrogenated silicon

1996 ◽  
Author(s):  
Mikhail S. Bresler ◽  
Oleg B. Gusev ◽  
V. K. Kudoyarova ◽  
A. N. Kuznetsov ◽  
Petr E. Pak ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hydrogenated Silicon ◽  
Room Temperature Photoluminescence ◽  
Amorphous Hydrogenated Silicon ◽  
Erbium Doped

Room‐temperature luminescence from erbium‐doped silicon thin films prepared by laser ablation

1996 ◽  
Vol 69 (25) ◽  
pp. 3896-3898 ◽  
Author(s):  
Shuji Komuro ◽  
Shinya Maruyama ◽  
Takitaro Morikawa ◽  
Xinwei Zhao ◽  
Hideo Isshiki ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
Silicon Thin Films ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Room Temperature Luminescence
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